DMG1013UW P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) ESD Protected Up To 3KV "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability • • • • • • Case: SOT-323 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 2 Ordering Information: See Page 2 Weight: 0.006 grams (approximate) Drain D Gate Gate Protection Diode ESD PROTECTED Maximum Ratings Source G Equivalent Circuit Top View S Top View @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 3) Steady State TA = 25°C TA = 85°C Pulsed Drain Current (Note 4) Symbol Value Unit VDSS VGSS -20 ±6 V V ID -0.82 -0.54 A IDM -6 A Symbol PD RθJA TJ, TSTG Value 0.31 398 -55 to +150 Unit W °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3) Operating and Storage Temperature Range Notes: 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, with minimum recommended pad layout. 4. Repetitive rating, pulse width limited by junction temperature. DMG1013UW Document number: DS31861 Rev. 3 - 2 1 of 6 www.diodes.com October 2009 © Diodes Incorporated DMG1013UW @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit Test Condition BVDSS IDSS IGSS -20 - - -100 ±2.0 V nA μA VGS = 0V, ID = -250μA VDS = -20V, VGS = 0V VGS = ±4.5V, VDS = 0V VGS(th) -0.5 - -1.0 V RDS (ON) - 0.5 0.7 1.0 0.75 1.05 1.5 Ω |Yfs| VSD - 0.9 -0.8 -1.2 S V VDS = VGS, ID = -250μA VGS = -4.5V, ID = -430mA VGS = -2.5V, ID = -300mA VGS = -1.8V, ID = -150mA VDS = -10V, ID = -250mA VGS = 0V, IS = -150mA Ciss Coss Crss Qg Qgs Qgd tD(on) tr tD(off) tf - 59.76 12.07 6.36 622.4 100.3 132.2 5.1 8.1 28.4 20.7 - pF pF pF pC pC pC ns ns ns ns VDS = -16V, VGS = 0V, f = 1.0MHz VGS = -4.5V, VDS = -10V, ID = -250mA VDD = -10V, VGS = -4.5V, RL = 47Ω, RG = 10Ω, ID = -200mA 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to production testing. 1.5 10 VGS = -8.0V VDS = -5V 8 1.2 VGS = -4.5V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) NEW PRODUCT Electrical Characteristics VGS = -3.0V 0.9 VGS = -2.5V VGS = -2.0V 0.6 0.3 6 4 2 T A = 150°C VGS = -1.5V T A = 125°C VGS = -1.2V 0 TA = -55°C 0 0 1 2 3 4 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic DMG1013UW Document number: DS31861 Rev. 3 - 2 5 2 of 6 www.diodes.com TA = 85°C T A = 25°C 0 0.5 1 1.5 2 2.5 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 3 October 2009 © Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.6 1.4 1.2 1.0 VGS = -1.8V 0.8 VGS = -2.5V 0.6 VGS = -4.5V 0.4 0.2 0 0.3 0.6 0.9 1.2 -ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1.0 VGS = -4.5V 0.8 TA = 150°C TA = 125°C 0.6 T A = 85°C TA = 25°C 0.4 TA = -55°C 0.2 0 0 1.5 1.7 1.2 1.5 1.0 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0 VGS = -2.5V ID = -500mA 1.3 VGS = -4.5V ID = -1.0A 1.1 0.9 0.3 0.6 0.9 1.2 -ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1.5 VGS = -2.5V ID = -500mA 0.8 0.6 VGS = -4.5V ID = -1.0A 0.4 0.2 0.7 0.5 -50 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature -IS, SOURCE CURRENT (A) 10 1.2 ID = -1mA 0.8 ID = -250µA 0.4 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMG1013UW Document number: DS31861 Rev. 3 - 2 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature 1.6 -VGS(TH), GATE THRESHOLD VOLTAGE (V) NEW PRODUCT DMG1013UW 3 of 6 www.diodes.com 8 6 T A = 25°C 4 2 0 0.2 0.4 0.6 0.8 1.0 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 October 2009 © Diodes Incorporated DMG1013UW 100 1,000 f = 1MHz 10 -IDSS, LEAKAGE CURRENT (nA) NEW PRODUCT C, CAPACITANCE (pF) Ciss Coss Crss TA = 150°C 100 TA = 125°C 10 T A = 85°C TA = 25°C 1 1 0 5 10 15 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 20 0 4 8 12 16 -VDS, DRAIN-SOURCE VOLTAGE (V) 20 Fig. 10 Typical Leakage Current vs. Drain-Source Voltage r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RθJA(t) = r(t) * RθJA RθJA = 504°C/W D = 0.02 0.01 D = 0.01 P(pk) t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (s) Fig. 11 Transient Thermal Response Ordering Information (Note 7) Part Number DMG1013UW-7 Notes: Case SOT-323 Packaging 3000 / Tape & Reel 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year Code Month Code 2008 V Jan 1 2009 W Feb 2 DMG1013UW Document number: DS31861 Rev. 3 - 2 PA1 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: W = 2009) M = Month (ex: 9 = September) YM PA1 2010 X Mar 3 Apr 4 2011 Y May 5 Jun 6 4 of 6 www.diodes.com 2012 Z Jul 7 2013 A Aug 8 Sep 9 2014 B Oct O 2015 C Nov N Dec D October 2009 © Diodes Incorporated NEW PRODUCT DMG1013UW Package Outline Dimensions A B C G H K M J D L SOT-323 Dim Min Max Typ A 0.25 0.40 0.30 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 G 1.20 1.40 1.30 H 1.80 2.20 2.15 J 0.0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30 M 0.10 0.18 0.11 0° 8° α All Dimensions in mm Suggested Pad Layout Y Z C X DMG1013UW Document number: DS31861 Rev. 3 - 2 Dimensions Value (in mm) Z 2.8 X 0.7 Y 0.9 C 1.9 E 1.0 E 5 of 6 www.diodes.com October 2009 © Diodes Incorporated DMG1013UW IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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