FJD3305H1 NPN Silicon Transistor Features • • • • • High Voltage Switch Mode Application Fast Speed Switching Wide Safe Operating Area Suitable for Electronic Ballast Application Wave Soldering DPAK 1 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG TC = 25°C unless otherwise noted Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation, Ta = 25°C Tc = 25°C Junction Temperature Storage Temperature Value Units 700 400 9 4 8 2 1.1 50 150 -65 to 150 V V V A A A W W °C °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol RθJA RθJC Ta = 25°C unless otherwise noted Parameter Value Units 110 2.0 °C/W °C/W Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case * Device mounted on minimum pad size Ordering Information Part Number Marking Package Packing Method FJD3305H1TM J3305H1 D-PAK Tape & Reel © 2012 Fairchild Semiconductor Corporation FJD3305H1 Rev. A1 Remarks www.fairchildsemi.com 1 FJD3305H1 — NPN Silicon Transistor April 2012 TC = 25°C unless otherwise noted Symbol Parameter Conditions Min. BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) Collector-Base Breakdwon Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain * 700 400 9 VBE(sat) Base-Emitter Saturation Voltage fT Cob tON tSTG tF Current Gain Bandwidth Product Output Capacitance Turn On Time Storage Time Fall Time IC = 500μA, IE = 0 IC = 5mA, IB = 0 IE = 500μA, IC = 0 VCB = 700V, IE = 0 VEB = 9V, IC = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 2A IC = 1A, IB = 0.2A IC = 2A, IB = 0.5A IC = 4A, IB = 1A IC = 1A, IB = 0.2A IC = 2A, IB = 0.5A VCE = 10V, IC = 0.5A VCB = 10V, f = 1MHz VCC = 125V, IC = 2A IB1 = -IB2 = 0.4A RL = 62.5Ω Collector-Emitter Saturation Voltage Typ. Max. 1 1 28 40 0.5 0.6 1.0 1.2 1.6 19 8 4 65 0.8 4.0 0.9 Units V V V μA μA V V V V V MHz pF μs μs μs * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% © 2012 Fairchild Semiconductor Corporation FJD3305H1 Rev. A1 www.fairchildsemi.com 2 FJD3305H1 — NPN Silicon Transistor Electrical Characteristics* 100 4.5 3.5 3.0 IB = 200mA 2.5 IB = 150mA 2.0 Ta = 125 C Ta = 75 C IB = 250mA IB = 100mA 1.5 IB = 50mA 1.0 O O Ta = - 25 C 10 Ta = 25 C 0.5 1 0.01 0.0 0 1 2 3 4 5 6 7 8 9 10 0.1 1 10 IC [A], COLLECTOR CUTRRENT VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 2. DC Current Gain Figure 1. Static Characteristic 10 10 IC = 4 IB VBE(sat) [V], SATURATION VOLTAGE VCE(sat) [V], SATURATION VOLTAGE VCE = 5V O O IB = 300mA hFE, DC CURRENT GAIN IC [A], COLLECTOR CURRENT 4.0 O Ta = 125 C 1 O Ta = 75 C O Ta = - 25 C 0.1 O Ta = 25 C 0.01 0.01 0.1 1 IC = 4 IB O Ta = - 25 C O Ta = 25 C 1 O O 0.1 0.01 10 Ta = 75 C Ta = 125 C IC [A], COLLECTOR CURRENT 0.1 1 10 IC [A], COLLECTOR CURRENT Figure 4. Base - EmitterSaturation Voltage Figure 3. Collector- Emitter Saturation Voltage 1 0 0 00 F = 1M H z C ib O Ta = 25 C 1000 CAPACITANCE[pF] tF & tSTG [μs], SWITCHING TIME tSTG tF O Ta = 125 C 1 0 00 1 00 C ob 10 100 IB1 = - IB2 = 0.4A VCC = 125V 1 1 1 10 IC [A], COLLECTOR CURRENT R E VER SE VO LT AG E[V] Figure 5. Switching Time Figure 6. Capacitance © 2012 Fairchild Semiconductor Corporation FJD3305H1 Rev. A1 100 www.fairchildsemi.com 3 FJD3305H1 — NPN Silicon Transistor Typical Performance Characteristics 10 10 VCE(sat) [V], SATURATION VOLTAGE VBE(OFF)=-9V IC [A], COLLECTOR CURRENT VBE(OFF)=-7V 8 VBE(OFF)=-5V VBE(OFF)=-3V 6 4 VCC=50V, LC=1mH VBE(OFF)=-5V, IB2=-1.0A RBB=0.7 Ohms IC/IB=5 2 VCC=50V, LC=1mH VBE(OFF)=-5V, IB2=-1.0A RBB=0.7 Ohms 8 6 Ic/Ib = 4 4 Ic/Ib = 3 2 0 0 0 100 200 300 400 500 600 700 1 800 2 Figure 7. Reverse Biased Safe Operating Area 4 5 6 7 8 Figure 8. Collector- Emitter Saturation Voltage at RBSOA 60 Ic/Ib = 5 200 3 IC [A], COLLECTOR CURRENT VCE [V], COLLECTOR-EMITTER VOLTAGE Ic/Ib = 4 VCC=50V, LC=1mH VBE(OFF)=-5V, IB2=-1.0A RBB=0.7 Ohms 50 PC[W], POWER DISSIPATION 160 Turn-on PW [uS] Ic/Ib = 5 Ic/Ib = 3 120 80 40 40 30 20 10 0 0 1 2 3 4 5 6 7 0 8 25 IC [A], COLLECTOR CURRENT 50 75 100 125 150 175 o Tc[ C], CASE TEMPERATURE Figure 9. Input Pulse width vs Correct current at RBSOA Figure 10. Power Derating Figure 11. RBSOA Test Circuit © 2012 Fairchild Semiconductor Corporation FJD3305H1 Rev. A1 www.fairchildsemi.com 4 FJD3305H1 — NPN Silicon Transistor Typical Performance Characteristics (Continued) FJD3305H1 — NPN Silicon Transistor Physical Dimensions D-PAK Dimensions in Millimeters © 2012 Fairchild Semiconductor Corporation FJD3305H1 Rev. 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