FJT44 NPN Epitaxial Silicon Transistor Features • High Voltage Transistor 3 2 1 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* TA=25°C unless otherwise noted Symbol Value Units VCBO Collector-Base Voltage Parameter 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V 300 mA 2 W 150 °C - 55 to +150 °C IC Collector Current PC Collector Dissipation TJ Junction Temperature TSTG (TA = 25 °C) Storage Temperature Range * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics* TA=25°C unless otherwise noted Symbol RθJA Parameter Thermal Resistance, Junction to Ambient Value Units 62.5 °C/W * Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm. mounting pad for the collector lead min. 6 cm2 Ordering Information Part Number Package Packing size Packing Method FJT44KTF SOT-223 2500 pcs Tape and Reel FJT44TF SOT-223 4000 pcs Tape and Reel © 2009 Fairchild Semiconductor Corporation FJT44 Rev. B1 Remarks www.fairchildsemi.com 1 FJT44 — NPN Epitaxial Silicon Transistor December 2009 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 100μA, IE = 0 500 V BVCEO Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 400 V BVEBO Emitter-Base Breakdown Voltage IE = 100μA, IC = 0 6 V ICBO Collector-Base Cutoff Current VCB = 400V, IE = 0 100 nA ICES Collector-Emitter Cutoff Current VCE = 400V, VBE = 0 500 nA IEBO Emitter-Base Cutoff Current VCE = 4V, IC = 0 100 nA hFE DC Current Gain VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=50mA VCE=10V, IC=100mA 40 50 45 40 200 VCE(sat) Collector-Emitter Saturation Voltage IC = 1mA, IB = 0.1mA IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA 0.4 0.5 0.75 V V V VBE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1mA 0.75 V Output Capacitance VCB = 20V, IE = 0, f = 1MHz 7 pF Cobo * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% © 2009 Fairchild Semiconductor Corporation FJT44 Rev. B1 www.fairchildsemi.com 2 FJT44 — NPN Epitaxial Silicon Transistor Electrical Characteristics* 160 10 140 VCC=150V IC/IB=10 120 TA=25 C VBE(off)=4V VCE=10V 100 80 t[us], TIME hFE, DC CURRENT GAIN o 60 40 1 20 tf 0 td -20 0.1 1 -40 1 10 100 1000 10 100 10000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Turn-On Switching Times 100 1000 VCC=150V IC/IB=10 o TA=25 C f=1MHz o Cib[pF],Cob[pF], CAPACITANCE TA=25 C t[us], TIME 10 ts 1 tf 0.1 1 10 100 Cib 10 1 0.1 100 IC[mA], COLLECTOR CURRENT 10 100 1000 Figure 4. Capacitance 0.5 VCE[V] COLLECTOR EMITTER VOLTAGE 1.0 o TA=25 C 0.8 VBE(sat) @IC/IB=10 [V], VOLTAGE 1 VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Turn-Off Switching Times 0.6 VBE(on) @VCE=10V 0.4 0.2 0.0 0.1 VCE(sat)@IC/IB=10 1 10 100 o IC=1mA IC=10mA IC=50mA TA=25 C 0.4 0.3 0.2 0.1 0.0 10 1000 100 1000 10000 100000 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 5. On Voltage Figure 6. Collector Saturation Region © 2009 Fairchild Semiconductor Corporation FJT44 Rev. B1 Cob www.fairchildsemi.com 3 FJT44 — NPN Epitaxial Silicon Transistor Typical Performance Characteristics FJT44 — NPN Epitaxial Silicon Transistor Typical Performance Characteristics (Continued) hFE, SMALL SIGNAL CURRENT GAIN 100 VCE=10V f=10MHz o TA=25 C 10 1 0.1 0.1 1 10 100 1000 IC[mA], COLLECTOR CURRENT Figure 1. High Frequency Current Gain © 2009 Fairchild Semiconductor Corporation FJT44 Rev. B1 www.fairchildsemi.com 4 FJT44 — NPN Epitaxial Silicon Transistor Physical Dimensions 3.00 ±0.10 4.60 ±0.25 6.50 ±0.20 (0.89) (0.95) (0.46) 1.60 ±0.20 2.30 TYP 7.00 ±0.30 (0.60) 0.70 ±0.10 (0.95) +0.04 0.06 –0.02 (0.60) 3.50 ±0.20 1.75 ±0.20 MAX1.80 0.65 ±0.20 0.08MAX SOT-223 ° 10 +0.10 0.25 –0.05 0°~ Dimensions in Millimeters © 2009 Fairchild Semiconductor Corporation FJT44 Rev. B1 www.fairchildsemi.com 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I41 © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com