FCB36N60N N-Channel SupreMOS® MOSFET 600 V, 36 A, 90 mΩ Features Description • RDS(on) = 81 mΩ (Typ.)@ VGS = 10 V, ID = 18 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiate it from the conventional MOSFETs. This advanced technology and precise process control provide lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. • Ultra low gate charge (Typ. Qg = 86 nC) • Low effective output capacitance (Typ. Coss.eff = 361 pF) • 100% avalanche tested • RoHS compliant Applications • Solar Inverter • AC-DC Power Supply D D G G S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy dv/dt Unit V ±30 V -Continuous (TC = 25oC) 36 -Continuous (TC = 100oC) 22.7 - Pulsed Peak Diode Recovery dv/dt A (Note 1) 108 A (Note 2) 1800 mJ MOSFET dv/dt Ruggedness (Note 3) 12 A 3.12 mJ 100 V/ns 20 V/ns (TC = 25oC) 312 W - Derate above 25oC 2.6 W/oC PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL FCB36N60N 600 -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FCB36N60N RθJC Thermal Resistance, Junction to Case 0.4 RθJA* Thermal Resistance, Junction to Ambient * 40 RθJA Thermal Resistance, Junction to Ambient Unit o C/W 62.5 *When mounted on the minmium pad size recommended (PCB Mount) ©2010 Fairchild Semiconductor Corporation FCB36N60N Rev. C0 1 www.fairchildsemi.com FCB36N60N N-Channel MOSFET March 2013 Device Marking FCB36N60N Device FCB36N60N Package D2-PAK Reel Size 330mm Tape Width 24mm Quantity 800 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit 600 - - V - 0.7 - V/oC Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 1 mA, VGS = 0 V, TC = 25oC IDSS Zero Gate Voltage Drain Current VDS = 480 V, VGS = 0 V - - 10 VDS = 480 V, VGS = 0 V, TC = 125oC - - 100 IGSS Gate to Body Leakage Current VGS = ±30 V, VDS = 0 V - - ±100 ID = 1 mA, Referenced to 25oC μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA 2.0 - 4.0 V Static Drain to Source On Resistance VGS = 10 V, ID = 18 A - 81 90 mΩ gFS Forward Transconductance VDS = 40 V, ID = 18 A - 41 - S VDS = 100 V, VGS = 0 V f = 1 MHz - 3595 4785 pF - 149 200 pF pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 4 6 Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz - 80 - pF Cosseff. Effective Output Capacitance VDS = 0 V to 380 V, VGS = 0 V - 361 - pF Qg(tot) Total Gate Charge at 10V - 86 112 nC Qgs Gate to Source Gate Charge - 15.4 - nC Qgd Gate to Drain “Miller” Charge VDS = 380 V, ID = 18 A, VGS = 10 V - 26.4 - nC ESR Equivalent Series Resistance (G-S) - 1 - Ω - 23 56 ns - 22 54 ns - 94 198 ns - 4 18 ns (Note 4) Drain Open Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 380 V, ID = 18 A RG = 4.7 Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 36 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 108 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 18 A - - 1.2 V trr Reverse Recovery Time - 574 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 18 A dIF/dt = 100 A/μs 10 - μC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 12 A, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 36 A, di/dt ≤ 200 A/μs, VDD = 380 V, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics ©2010 Fairchild Semiconductor Corporation FCB36N60N Rev. C0 2 www.fairchildsemi.com FCB36N60N N-Channel MOSFET Package Marking and Ordering Information FCB36N60N N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1000 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V 10 ID, Drain Current[A] ID, Drain Current[A] 100 1 100 o 150 C o 25 C 10 o -55 C *Notes: 1. 250μs Pulse Test *Notes: 1. VDS = 20V 2. 250μs Pulse Test 1 o 2. TC = 25 C 0.1 0.1 1 10 VDS, Drain-Source Voltage[V] 0.3 100 2 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 300 IS, Reverse Drain Current [A] 0.2 VGS = 10V 0.1 VGS = 20V 100 o 150 C o 25 C 10 *Notes: 1. VGS = 0V 2. 250μs Pulse Test o *Notes: TC = 25 C 0 0 20 40 60 ID, Drain Current [A] 80 1 0.4 100 Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] Ciss 1000 Coss 10 1 0.1 1.2 10 10000 100 0.6 0.8 1.0 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 100000 Capacitances [pF] 7 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.3 RDS(ON) [Ω], Drain-Source On-Resistance 3 4 5 6 VGS, Gate-Source Voltage[V] *Notes: 1. VGS = 0V 2. f = 1MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 10 100 VDS, Drain-Source Voltage [V] ©2010 Fairchild Semiconductor Corporation FCB36N60N Rev. C0 Crss VDS = 120V VDS = 300V VDS = 480V 8 6 4 2 *Notes: ID = 18A 0 600 0 3 25 50 75 Qg, Total Gate Charge [nC] 100 www.fairchildsemi.com FCB36N60N N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 1mA 0.8 -80 -40 0 40 80 120 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 18A 0.5 0.0 -80 160 Figure 9. Maximum Safe Operating Area -40 0 40 80 120 o TJ, Junction Temperature [ C] 160 Figure 10. Maximum Drain Current vs. Case Temperature 1000 40 100 20μs 100μs 1ms 10ms DC 10 ID, Drain Current [A] ID, Drain Current [A] 2.5 Operation in This Area is Limited by R DS(on) 1 *Notes: o 0.1 30 20 10 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0.01 0.1 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve Thermal Response [ZθJC] 1 0.5 PDM 0.1 PDM t1 t2 0.2 t1 t2 0.1 *Notes: 0.05 o 1. ZθJC(t) = 0.4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.02 0.01 Single pulse 0.01 -5 10 ©2010 Fairchild Semiconductor Corporation FCB36N60N Rev. C0 -4 10 -3 10 -2 -1 10 10 1 Rectangular Pulse Duration [sec] 4 10 2 10 3 10 www.fairchildsemi.com FCB36N60N N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms ©2010 Fairchild Semiconductor Corporation FCB36N60N Rev. C0 5 www.fairchildsemi.com FCB36N60N N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop ©2010 Fairchild Semiconductor Corporation FCB36N60N Rev. C0 6 www.fairchildsemi.com FCB36N60N N-Channel MOSFET Mechanical Dimensions D2PAK ©2010 Fairchild Semiconductor Corporation FCB36N60N Rev. C0 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. 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Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2010 Fairchild Semiconductor Corporation FCB36N60N Rev. C0 8 www.fairchildsemi.com FCB36N60N N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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