FQP9N90C / FQPF9N90C N-Channel QFET® MOSFET 900 V, 8.0 A, 1.4 Ω Features Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. • 8 A, 900V, RDS(on) = 1.4 Ω @VGS = 10 V, ID = 4 A • Low Gate Charge (Typ. 45 nC) • Low Crss (Typ. 14 pF) • 100% Avalanche Tested D ! ● ◀ G! G DS TO-220 ▲ ● ● TO-220F GD S ! S Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQP9N90C FQPF9N90C Unit V 8.0 8.0 * A 2.8 2.8 * A 32 32 * A 900 - Continuous (TC = 100°C) IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 8.0 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note 1) 20.5 4.0 -55 to +150 mJ V/ns W W/°C °C 300 °C dv/dt PD TJ, TSTG TL - Pulsed (Note 1) (Note 3) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds ± 30 V 900 mJ 205 1.64 68 0.54 * Drain current limited by maximum junction temperature Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case RθJS Thermal Resistance, Case-to-Sink Typ. RθJA Thermal Resistance, Junction-to-Ambient ©2003 Fairchild Semiconductor Corporation FQP9N90C / FQPF9N90C Rev. C0 FQP9N90C 0.61 FQPF9N90C 1.85 Unit °C/W 0.5 -- °C/W 62.5 62.5 °C/W www.fairchildsemi.com FQP9N90C / FQPF9N90C N-Channel MOSFET March 2013 Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Unit 900 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.99 -- V/°C IDSS IGSSF IGSSR VDS = 900 V, VGS = 0 V -- -- 10 µA VDS = 720 V, TC = 125°C -- -- 10 µA Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 3.0 -- 5.0 V -- 1.12 1.4 Ω -- 9.2 -- S -- 2100 2730 pF -- 175 230 pF -- 14 18 pF Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 4 A gFS Forward Transconductance VDS = 40 V, ID = 4 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 450 V, ID = 9.0A, RG = 25 Ω (Note 4, 5) VDS = 720 V, ID = 9.0A, VGS = 10 V (Note 4, 5) -- 50 110 ns -- 120 250 ns -- 100 210 ns -- 75 160 ns -- 45 58 nC -- 13 -- nC -- 18 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 8.0 A ISM -- -- 32.0 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 8 A Drain-Source Diode Forward Voltage -- -- 1.4 V trr Reverse Recovery Time -- 550 -- ns Qrr Reverse Recovery Charge -- 6.5 -- µC VGS = 0 V, IS = 9 A, dIF / dt = 100 A/µs (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 21 mH, IAS = 9A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 9.0A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2003 Fairchild Semiconductor Corporation FQP9N90C / FQPF9N90C Rev. C0 www.fairchildsemi.com FQP9N90C / FQPF9N90C N-Channel MOSFET Electrical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : 1 1 10 o 150 C ID, Drain Current [A] ID, Drain Current [A] 10 0 10 o o -55 C 25 C 0 10 ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ -1 10 ※ Notes : 1. VDS = 50V 2. 250μ s Pulse Test -1 -1 0 10 10 1 10 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1 2.5 10 IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 3.0 VGS = 10V 2.0 VGS = 20V 0 10 1.5 25℃ 150℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test ※ Note : TJ = 25℃ -1 1.0 0 5 10 15 20 25 30 10 0.2 0.4 ID, Drain Current [A] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 3500 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 3000 Capacitance [pF] 1.0 1.2 1.4 12 VDS = 180V 2000 Coss 1500 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 1000 Crss VGS, Gate-Source Voltage [V] Ciss 500 0.8 Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature VDS = 450V 10 2500 0.6 VSD, Source-Drain voltage [V] VDS = 720V 8 6 4 2 ※ Note : ID = 9A 0 -1 10 0 0 10 1 10 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2003 Fairchild Semiconductor Corporation FQP9N90C / FQPF9N90C Rev. C0 0 10 20 30 40 50 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics www.fairchildsemi.com FQP9N90C / FQPF9N90C N-Channel MOSFET Typical Characteristics (Continued) 3.0 1.2 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μ A 0.9 0.8 -100 -50 0 50 100 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 4.5 A 0.5 150 0.0 -100 200 Figure 7. Breakdown Voltage Variation vs Temperature 50 100 150 Operation in This Area is Limited by R DS(on) 2 10 10 µs 10 µs 100 µs 1 1 0 10 ※ Notes : -1 10 100 µs 10 1 ms 10 ms DC 100 ms ID, Drain Current [A] ID, Drain Current [A] 10 1 ms 10 ms 100 ms 0 10 DC ※ Notes : -1 10 o o 1. TC = 25 C 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse o 2. TJ = 150 C 3. Single Pulse -2 -2 10 200 Figure 8. On-Resistance Variation vs Temperature Operation in This Area is Limited by R DS(on) 2 0 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] 10 -50 o o 10 0 1 10 2 10 3 10 0 10 10 1 10 2 10 3 10 VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 9-1. Maximum Safe Operating Area for FQP9N90C Figure 9-2. Maximum Safe Operating Area for FQPF9N90C 8 ID, Drain Current [A] 6 4 2 0 25 50 75 100 125 150 TC, Case Temperature [℃] Figure 10. Maximum Drain Current vs Case Temperature ©2003 Fairchild Semiconductor Corporation FQP9N90C / FQPF9N90C Rev. C0 www.fairchildsemi.com FQP9N90C / FQPF9N90C N-Channel MOSFET Typical Characteristics (Continued) 0 D = 0 .5 0 .2 10 ※ N o te s : 1 . Z θ J C (t) = 0 .6 1 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) -1 0 .1 PDM 0 .0 5 t1 0 .0 2 0 .0 1 Z θ JC (t), T h e rm a l R e s p o n s e 10 FQP9N90C / FQPF9N90C N-Channel MOSFET Typical Characteristics 10 10 t2 s in g le p u ls e -2 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] 10 0 D = 0 .5 0 .2 ※ N o te s : 1 . Z θ J C (t) = 1 .8 5 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) 0 .1 10 PDM 0 .0 5 -1 t1 t2 0 .0 2 θ JC (t), T h e rm a l R e s p o n s e Figure 11-1. Transient Thermal Response Curve for FQP9N90C Z 0 .0 1 s in g le p u ls e 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11-2. Transient Thermal Response Curve for FQPF9N90C ©2003 Fairchild Semiconductor Corporation FQP9N90C / FQPF9N90C Rev. C0 www.fairchildsemi.com FQP9N90C / FQPF9N90C N-Channel MOSFET Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ Qg 200nF 12V 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V tp ©2003 Fairchild Semiconductor Corporation FQP9N90C / FQPF9N90C Rev. C0 ID (t) VDS (t) VDD tp Time www.fairchildsemi.com FQP9N90C / FQPF9N90C N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2003 Fairchild Semiconductor Corporation FQP9N90C / FQPF9N90C Rev. C0 www.fairchildsemi.com FQP9N90C / FQPF9N90C N-Channel MOSFET Mechanical Dimensions TO-220 Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation FQP9N90C / FQPF9N90C Rev. C0 www.fairchildsemi.com FQP9N90C / FQPF9N90C N-Channel MOSFET Mechanical Dimensions TO-220F Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation FQP9N90C / FQPF9N90C Rev. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2003 Fairchild Semiconductor Corporation FQP9N90C / FQPF9N90C Rev. C0 www.fairchildsemi.com FQP9N90C / FQPF9N90C N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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