FCP600N60Z / FCPF600N60Z N-Channel SuperFET® II MOSFET 600 V, 7.4 A, 600 mΩ Description Features ® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFETII MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency. • 650 V @TJ = 150°C • Max. RDS(on) = 600 mΩ • Ultra Low Gate Charge (Typ. Qg = 20 nC) • Low Effective Output Capacitance (Typ. Coss.eff = 74 pF) • 100% Avalanche Tested • ESD Improved Capacity Applications • LCD / LED / PDP TV and Monitor Lighting • Solar Inverter • AC-DC Power Supply D G TO-220 G D S TO-220F GD S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage FCP600N60Z FCPF600N60Z 600 Unit V ±20 V - DC - AC ±30 (f > 1 Hz) V -Continuous (TC = 25oC) 7.4 7.4* 4.7 4.7* ID Drain Current -Continuous (TC = 100oC) - Pulsed IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 1.5 A EAR Repetitive Avalanche Energy (Note 1) 0.89 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt (Note 1) (Note 2) (TC = 25oC) Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds - Derate above 25oC 22.2* 135 MOSFET dv/dt PD TL 22.2 A A mJ 20 V/ns 100 V/ns 89 28 W 0.71 0.22 W/oC -55 to +150 oC 300 oC *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FCP600N60Z FCPF600N60Z RθJC Thermal Resistance, Junction to Case 1.4 4.5 RθJA Thermal Resistance, Junction to Ambient 62.5 62.5 ©2012 Fairchild Semiconductor Corporation FCP600N60Z / FCPF600N60Z Rev. C2 1 Unit oC/W www.fairchildsemi.com FCP600N60Z / FCPF600N60Z N-Channel MOSFET March 2013 Device Marking FCP600N60Z Device FCP600N60Z Package TO-220 Reel Size - Tape Width - Quantity 50 FCPF600N60Z FCPF600N60Z TO-220F - - 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS = 0 V, ID = 10 mA, TJ = 25°C 600 - - V VGS = 0 V, ID = 10 mA, TJ = 150°C 650 - - V - 0.67 - V/oC - 700 - V Off Characteristics BVDSS Drain to Source Breakdown Voltage ΔBVDSS ΔTJ BVDS Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage IDSS Zero Gate Voltage Drain Current VDS = 480 V, VGS = 0 V - - 1 VDS = 480 V, TC = 125oC - - 10 IGSS Gate to Body Leakage Current VGS = ±20 V, VDS = 0 V - - ±10 2.5 - 3.5 V - 0.51 0.6 Ω - 6.7 - S - 840 1120 pF - 630 840 pF pF ID = 10 mA, Referenced to 25oC VGS = 0 V, ID = 7.4 A μA uA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10 V, ID = 3.7 A VDS = 20 V, ID = 3.7 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 30 45 Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1.0 MHz - 16.5 - pF Coss eff. Effective Output Capacitance VDS = 0 V to 480 V, VGS = 0 V - 74 - pF Qg(tot) Total Gate Charge at 10V - 20 26 nC Qgs Gate to Source Gate Charge VDS = 380 V, ID = 3.7 A VGS = 10 V - 3.4 - nC - 7.5 - nC - 2.89 - Ω - 13 36 ns - 7 24 ns - 39 88 ns - 9 28 ns Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance VDS = 25 V, VGS = 0 V f = 1 MHz (Note 4) Drain open Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 380 V, ID = 3.7 A VGS = 10 V, RG = 4.7 Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 7.4 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 22.2 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 3.7 A - - 1.2 V trr Reverse Recovery Time 200 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 3.7 A dIF/dt = 100 A/μs - 2.3 - μC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 1.5 A, VDD = 50 V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 3.7 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics ©2012 Fairchild Semiconductor Corporation FCP600N60Z / FCPF600N60Z Rev. C2 2 www.fairchildsemi.com FCP600N60Z / FCPF600N60Z N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 20 *Notes: 1. VDS = 20V 2. 250μs Pulse Test ID, Drain Current[A] 10 ID, Drain Current[A] 50 VGS = 10.0V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 1 10 o 25 C o 150 C o -55 C 1 *Notes: 1. 250μs Pulse Test o 2. TC = 25 C 0.4 0.2 1 10 VDS, Drain-Source Voltage[V] 0.2 20 2 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 5 6 7 VGS, Gate-Source Voltage[V] 100 IS, Reverse Drain Current [A] 1.0 0.8 VGS = 10V 0.6 VGS = 20V 0.4 o 150 C 10 o 25 C *Notes: 1. VGS = 0V o 2. 250μs Pulse Test *Note: TC = 25 C 0.2 0 4 8 12 ID, Drain Current [A] 16 1 0.2 20 Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] Ciss 100 1 0.5 0.1 1.4 10 1000 10 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 10000 Capacitances [pF] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 1.2 RDS(ON) [Ω], Drain-Source On-Resistance 3 *Note: 1. VGS = 0V 2. f = 1MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 10 100 VDS, Drain-Source Voltage [V] ©2012 Fairchild Semiconductor Corporation FCP600N60Z / FCPF600N60Z Rev. C2 Coss VDS = 120V VDS = 300V VDS = 480V 8 6 4 2 Crss *Note: ID = 3.7A 0 600 3 0 5 10 15 20 Qg, Total Gate Charge [nC] 25 www.fairchildsemi.com FCP600N60Z / FCPF600N60Z N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.5 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.12 1.08 1.04 1.00 0.96 *Notes: 1. VGS = 0V 2. ID = 10mA 0.92 0.88 -80 -40 0 40 80 120 o TJ, Junction Temperature [ C] 1.0 *Notes: 1. VGS = 10V 2. ID = 3.7A 0.5 -80 ID, Drain Current [A] 10μs 100μs Operation in This Area is Limited by R DS(on) *Notes: o 1ms 10ms DC 10 10μs 100μs 1ms 1 Operation in This Area is Limited by R DS(on) o o 2. TJ = 150 C 3. Single Pulse 0.01 0.1 1000 Figure 11. Maximum Drain Current 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 12. Eoss vs. Drain to Source Voltage Switching Capability 8 4 6 3 EOSS, [μJ] ID, Drain Current [A] DC 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 10ms *Notes: 0.1 1. TC = 25 C 4 2 0 25 160 100 10 0.1 0.1 -40 0 40 80 120 o TJ, Junction Temperature [ C] Figure 10. Maximum Safe Operating Area vs. Case Temperature - FCPF600N60Z 50 ID, Drain Current [A] 1.5 160 Figure 9. Maximum Safe Operating Area vs. Case Temperature - FCP600N60Z 1 2.0 2 1 50 75 100 125 o TC, Case Temperature [ C] ©2012 Fairchild Semiconductor Corporation FCP600N60Z / FCPF600N60Z Rev. C2 0 150 4 0 100 200 300 400 500 VDS, Drain to Source Voltage [V] 600 www.fairchildsemi.com FCP600N60Z / FCPF600N60Z N-Channel MOSFET Typical Performance Characteristics (Continued) FCP600N60Z / FCPF600N60Z N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 13. Transient Thermal Response Curve - FCP600N60Z 2 Thermal Response [ZθJC] 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse PDM t1 t2 *Notes: o 1. ZθJC(t) = 1.4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.01 -5 10 -4 10 -3 -2 -1 10 10 Rectangular Pulse Duration [sec] 0 10 10 Figure 14. Transient Thermal Response Curve - FCPF600N60Z Thermal Response [ZθJC] 5 0.5 0.2 1 0.1 PDM 0.05 0.02 0.01 Single pulse t1 *Notes: t2 o 1. ZθJC(t) = 4.5 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.1 -5 10 ©2012 Fairchild Semiconductor Corporation FCP600N60Z / FCPF600N60Z Rev. C2 -4 10 -3 -2 -1 0 10 10 10 10 Rectangular Pulse Duration [sec] 5 1 10 100 www.fairchildsemi.com FCP600N60Z / FCPF600N60Z N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms ©2012 Fairchild Semiconductor Corporation FCP600N60Z / FCPF600N60Z Rev. C2 6 www.fairchildsemi.com FCP600N60Z / FCPF600N60Z N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop ©2012 Fairchild Semiconductor Corporation FCP600N60Z / FCPF600N60Z Rev. C2 7 www.fairchildsemi.com FCP600N60Z / FCPF600N60Z N-Channel MOSFET Mechanical Dimensions TO-220AB ©2012 Fairchild Semiconductor Corporation FCP600N60Z / FCPF600N60Z Rev. C2 8 www.fairchildsemi.com FCP600N60Z / FCPF600N60Z N-Channel MOSFET Package Dimensions TO-220F (Retractable) * Front/Back Side Isolation Voltage : AC 2500V Dimensions in Millimeters ©2012 Fairchild Semiconductor Corporation FCP600N60Z / FCPF600N60Z Rev. C2 9 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2012 Fairchild Semiconductor Corporation FCP600N60Z / FCPF600N60Z Rev. C2 10 www.fairchildsemi.com FCP600N60Z / FCPF600N60Z N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. FPS™ Sync-Lock™ 2Cool™ ® F-PFS™ AccuPower™ ®* ® ® ® FRFET PowerTrench AX-CAP * SM Global Power Resource PowerXS™ BitSiC™ TinyBoost™ Green Bridge™ Programmable Active Droop™ Build it Now™ TinyBuck™ Green FPS™ QFET® CorePLUS™ TinyCalc™ QS™ Green FPS™ e-Series™ CorePOWER™ TinyLogic® CROSSVOLT™ Quiet Series™ Gmax™ TINYOPTO™ CTL™ GTO™ RapidConfigure™ TinyPower™ Current Transfer Logic™ IntelliMAX™ ™ TinyPWM™ ® DEUXPEED ISOPLANAR™ TinyWire™ Dual Cool™ Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™ TranSiC® EcoSPARK® and Better™ SignalWise™ TriFault Detect™ EfficentMax™ MegaBuck™ SmartMax™ TRUECURRENT®* ESBC™ MICROCOUPLER™ SMART START™ μSerDes™ MicroFET™ Solutions for Your Success™ ® MicroPak™ SPM® STEALTH™ MicroPak2™ Fairchild® UHC® SuperFET® MillerDrive™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-3 MotionMax™ FACT Quiet Series™ UniFET™ SuperSOT™-6 mWSaver™ FACT® VCX™ SuperSOT™-8 OptoHiT™ FAST® ® ® VisualMax™ SupreMOS OPTOLOGIC FastvCore™ ® VoltagePlus™ OPTOPLANAR SyncFET™ FETBench™ XS™