FAIRCHILD FCP600N60Z

FCP600N60Z / FCPF600N60Z
N-Channel SuperFET® II MOSFET
600 V, 7.4 A, 600 mΩ
Description
Features
®
®
SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior
switching performance, and withstand extreme dv/dt rate and
higher avalanche energy. Consequently, SuperFETII MOSFET is
suitable for various AC/DC power conversion for system miniaturization and higher efficiency.
• 650 V @TJ = 150°C
• Max. RDS(on) = 600 mΩ
• Ultra Low Gate Charge (Typ. Qg = 20 nC)
• Low Effective Output Capacitance (Typ. Coss.eff = 74 pF)
• 100% Avalanche Tested
• ESD Improved Capacity
Applications
• LCD / LED / PDP TV and Monitor Lighting
• Solar Inverter
• AC-DC Power Supply
D
G
TO-220
G D S
TO-220F
GD S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
FCP600N60Z FCPF600N60Z
600
Unit
V
±20
V
- DC
- AC
±30
(f > 1 Hz)
V
-Continuous (TC = 25oC)
7.4
7.4*
4.7
4.7*
ID
Drain Current
-Continuous (TC = 100oC)
- Pulsed
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note 1)
1.5
A
EAR
Repetitive Avalanche Energy
(Note 1)
0.89
mJ
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
(Note 1)
(Note 2)
(TC = 25oC)
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
- Derate above 25oC
22.2*
135
MOSFET dv/dt
PD
TL
22.2
A
A
mJ
20
V/ns
100
V/ns
89
28
W
0.71
0.22
W/oC
-55 to +150
oC
300
oC
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FCP600N60Z FCPF600N60Z
RθJC
Thermal Resistance, Junction to Case
1.4
4.5
RθJA
Thermal Resistance, Junction to Ambient
62.5
62.5
©2012 Fairchild Semiconductor Corporation
FCP600N60Z / FCPF600N60Z Rev. C2
1
Unit
oC/W
www.fairchildsemi.com
FCP600N60Z / FCPF600N60Z N-Channel MOSFET
March 2013
Device Marking
FCP600N60Z
Device
FCP600N60Z
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
FCPF600N60Z
FCPF600N60Z
TO-220F
-
-
50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS = 0 V, ID = 10 mA, TJ = 25°C
600
-
-
V
VGS = 0 V, ID = 10 mA, TJ = 150°C
650
-
-
V
-
0.67
-
V/oC
-
700
-
V
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ΔBVDSS
ΔTJ
BVDS
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
IDSS
Zero Gate Voltage Drain Current
VDS = 480 V, VGS = 0 V
-
-
1
VDS = 480 V, TC = 125oC
-
-
10
IGSS
Gate to Body Leakage Current
VGS = ±20 V, VDS = 0 V
-
-
±10
2.5
-
3.5
V
-
0.51
0.6
Ω
-
6.7
-
S
-
840
1120
pF
-
630
840
pF
pF
ID = 10 mA, Referenced to
25oC
VGS = 0 V, ID = 7.4 A
μA
uA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250 μA
Static Drain to Source On Resistance
gFS
Forward Transconductance
VGS = 10 V, ID = 3.7 A
VDS = 20 V, ID = 3.7 A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
-
30
45
Coss
Output Capacitance
VDS = 380 V, VGS = 0 V, f = 1.0 MHz
-
16.5
-
pF
Coss eff.
Effective Output Capacitance
VDS = 0 V to 480 V, VGS = 0 V
-
74
-
pF
Qg(tot)
Total Gate Charge at 10V
-
20
26
nC
Qgs
Gate to Source Gate Charge
VDS = 380 V, ID = 3.7 A
VGS = 10 V
-
3.4
-
nC
-
7.5
-
nC
-
2.89
-
Ω
-
13
36
ns
-
7
24
ns
-
39
88
ns
-
9
28
ns
Qgd
Gate to Drain “Miller” Charge
ESR
Equivalent Series Resistance
VDS = 25 V, VGS = 0 V
f = 1 MHz
(Note 4)
Drain open
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 380 V, ID = 3.7 A
VGS = 10 V, RG = 4.7 Ω
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
7.4
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
22.2
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 3.7 A
-
-
1.2
V
trr
Reverse Recovery Time
200
-
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 3.7 A
dIF/dt = 100 A/μs
-
2.3
-
μC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 1.5 A, VDD = 50 V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 3.7 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
©2012 Fairchild Semiconductor Corporation
FCP600N60Z / FCPF600N60Z Rev. C2
2
www.fairchildsemi.com
FCP600N60Z / FCPF600N60Z N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
20
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
ID, Drain Current[A]
10
ID, Drain Current[A]
50
VGS = 10.0V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1
10
o
25 C
o
150 C
o
-55 C
1
*Notes:
1. 250μs Pulse Test
o
2. TC = 25 C
0.4
0.2
1
10
VDS, Drain-Source Voltage[V]
0.2
20
2
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
4
5
6
7
VGS, Gate-Source Voltage[V]
100
IS, Reverse Drain Current [A]
1.0
0.8
VGS = 10V
0.6
VGS = 20V
0.4
o
150 C
10
o
25 C
*Notes:
1. VGS = 0V
o
2. 250μs Pulse Test
*Note: TC = 25 C
0.2
0
4
8
12
ID, Drain Current [A]
16
1
0.2
20
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage [V]
Ciss
100
1
0.5
0.1
1.4
10
1000
10
0.4
0.6
0.8
1.0
1.2
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10000
Capacitances [pF]
8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
1.2
RDS(ON) [Ω],
Drain-Source On-Resistance
3
*Note:
1. VGS = 0V
2. f = 1MHz
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1
10
100
VDS, Drain-Source Voltage [V]
©2012 Fairchild Semiconductor Corporation
FCP600N60Z / FCPF600N60Z Rev. C2
Coss
VDS = 120V
VDS = 300V
VDS = 480V
8
6
4
2
Crss
*Note: ID = 3.7A
0
600
3
0
5
10
15
20
Qg, Total Gate Charge [nC]
25
www.fairchildsemi.com
FCP600N60Z / FCPF600N60Z N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
2.5
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.12
1.08
1.04
1.00
0.96
*Notes:
1. VGS = 0V
2. ID = 10mA
0.92
0.88
-80
-40
0
40
80
120
o
TJ, Junction Temperature [ C]
1.0
*Notes:
1. VGS = 10V
2. ID = 3.7A
0.5
-80
ID, Drain Current [A]
10μs
100μs
Operation in This Area
is Limited by R DS(on)
*Notes:
o
1ms
10ms
DC
10
10μs
100μs
1ms
1
Operation in This Area
is Limited by R DS(on)
o
o
2. TJ = 150 C
3. Single Pulse
0.01
0.1
1000
Figure 11. Maximum Drain Current
1
10
100
VDS, Drain-Source Voltage [V]
1000
Figure 12. Eoss vs. Drain to Source Voltage
Switching Capability
8
4
6
3
EOSS, [μJ]
ID, Drain Current [A]
DC
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
1
10
100
VDS, Drain-Source Voltage [V]
10ms
*Notes:
0.1
1. TC = 25 C
4
2
0
25
160
100
10
0.1
0.1
-40
0
40
80
120
o
TJ, Junction Temperature [ C]
Figure 10. Maximum Safe Operating Area
vs. Case Temperature - FCPF600N60Z
50
ID, Drain Current [A]
1.5
160
Figure 9. Maximum Safe Operating Area
vs. Case Temperature - FCP600N60Z
1
2.0
2
1
50
75
100
125
o
TC, Case Temperature [ C]
©2012 Fairchild Semiconductor Corporation
FCP600N60Z / FCPF600N60Z Rev. C2
0
150
4
0
100
200
300
400
500
VDS, Drain to Source Voltage [V]
600
www.fairchildsemi.com
FCP600N60Z / FCPF600N60Z N-Channel MOSFET
Typical Performance Characteristics (Continued)
FCP600N60Z / FCPF600N60Z N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 13. Transient Thermal Response Curve - FCP600N60Z
2
Thermal Response [ZθJC]
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single pulse
PDM
t1
t2
*Notes:
o
1. ZθJC(t) = 1.4 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.01
-5
10
-4
10
-3
-2
-1
10
10
Rectangular Pulse Duration [sec]
0
10
10
Figure 14. Transient Thermal Response Curve - FCPF600N60Z
Thermal Response [ZθJC]
5
0.5
0.2
1
0.1
PDM
0.05
0.02
0.01
Single pulse
t1
*Notes:
t2
o
1. ZθJC(t) = 4.5 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.1
-5
10
©2012 Fairchild Semiconductor Corporation
FCP600N60Z / FCPF600N60Z Rev. C2
-4
10
-3
-2
-1
0
10
10
10
10
Rectangular Pulse Duration [sec]
5
1
10
100
www.fairchildsemi.com
FCP600N60Z / FCPF600N60Z N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
©2012 Fairchild Semiconductor Corporation
FCP600N60Z / FCPF600N60Z Rev. C2
6
www.fairchildsemi.com
FCP600N60Z / FCPF600N60Z N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VDD
VSD
Body Diode
Forward Voltage Drop
©2012 Fairchild Semiconductor Corporation
FCP600N60Z / FCPF600N60Z Rev. C2
7
www.fairchildsemi.com
FCP600N60Z / FCPF600N60Z N-Channel MOSFET
Mechanical Dimensions
TO-220AB
©2012 Fairchild Semiconductor Corporation
FCP600N60Z / FCPF600N60Z Rev. C2
8
www.fairchildsemi.com
FCP600N60Z / FCPF600N60Z N-Channel MOSFET
Package Dimensions
TO-220F (Retractable)
* Front/Back Side Isolation Voltage : AC 2500V
Dimensions in Millimeters
©2012 Fairchild Semiconductor Corporation
FCP600N60Z / FCPF600N60Z Rev. C2
9
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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As used here in:
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and (c) whose failure to perform when properly used in accordance with
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expected to result in a significant injury of the user.
2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2012 Fairchild Semiconductor Corporation
FCP600N60Z / FCPF600N60Z Rev. C2
10
www.fairchildsemi.com
FCP600N60Z / FCPF600N60Z N-Channel MOSFET
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