FQB34P10 / FQI34P10 P-Channel QFET MOSFET -100 V, -33.5 A, 60 mΩ Description Features This P-Channel enhancement mode power MOSFET is ® produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. • -33.5 A, -100 V, RDS(on) = 60 mΩ (max) @VGS = -10 V, ID = -16.75 A • Low Gate Charge (Typ. 85 nC) • Low Crss (Typ. 170 pF) • 100% Avalanche Tested • 175°C Maximum Junction Temperature Rating S D G ● ● ▶ ▲ G S I2-PAK D2-PAK FQB Series G D S ● FQI Series D Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQB34P10 / FQI34P10 -100 Unit V -33.5 A - Continuous (TC = 100°C) IDM Drain Current - Pulsed -23.5 A (Note 1) -134 A VGSS Gate-Source Voltage ± 25 V EAS Single Pulsed Avalanche Energy (Note 2) 2200 mJ IAR Avalanche Current (Note 1) -33.5 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * (Note 1) 15.5 -6.0 3.75 mJ V/ns W 155 1.03 -55 to +175 W W/°C °C 300 °C dv/dt PD (Note 3) Power Dissipation (TC = 25°C) TJ, TSTG TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case Typ -- Max 0.97 Unit °C/W RθJA Thermal Resistance, Junction-to-Ambient * -- 40 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2000 Fairchild Semiconductor Corporation FQB34P10 / FQI34P10 Rev. C0 www.fairchildsemi.com FQB34P10 / FQI34P10 P-Channel MOSFET March 2013 Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Unit -100 -- -- V -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 μA ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = -250 μA, Referenced to 25°C -- -0.1 IDSS IGSSF IGSSR VDS = -100 V, VGS = 0 V -- -- -1 μA VDS = -80 V, TC = 150°C -- -- -10 μA Gate-Body Leakage Current, Forward VGS = -25 V, VDS = 0 V -- -- -100 nA Gate-Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V -- -- 100 nA -2.0 -- -4.0 V -- 0.049 0.06 Ω -- 23 -- S Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 μA RDS(on) Static Drain-Source On-Resistance VGS = -10 V, ID = -16.75 A gFS Forward Transconductance VDS = -40 V, ID = -16.75 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz -- 2240 2910 pF -- 730 950 pF -- 170 220 pF Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = -50 V, ID = -33.5 A, RG = 25 Ω (Note 4, 5) VDS = -80 V, ID = -33.5 A, VGS = -10 V (Note 4, 5) -- 25 60 ns -- 250 510 ns -- 160 330 ns -- 210 430 ns -- 85 110 nC -- 15 -- nC -- 45 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- -33.5 A ISM -- -- -134 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -33.5 A Drain-Source Diode Forward Voltage -- -- -4.0 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -33.5 A, dIF / dt = 100 A/μs (Note 4) -- 160 -- ns -- 0.88 -- μC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L =mH, IAS = -33.5A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ -33.5A, di/dt ≤ 300A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2000 Fairchild Semiconductor Corporation FQB34P10 / FQI34P10 Rev. C0 www.fairchildsemi.com FQB34P10 / FQI34P10 P-Channel MOSFET Electrical Characteristics VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -5.5 V -5.0 V Bottom : -4.5 V 2 10 Top : -ID , Drain Current [A] -ID, Drain Current [A] 1 10 2 10 0 10 -1 10 175℃ 1 10 25℃ 0 10 -55℃ ※ Note : 1. 250μ s Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = -40V 2. 250μ s Pulse Test -2 10 -1 -1 0 10 10 1 10 10 2 4 Figure 1. On-Region Characteristics -IDR , Reverse Drain Current [A] RDS(on) [Ω], Drain-Source On-Resistance 2 VGS = - 10V 0.25 0.20 VGS = - 20V 0.15 0.10 0.05 ※ Note : TJ = 25℃ 1 10 0 10 25℃ 175℃ 25 50 75 100 125 150 175 200 10 0.0 0.5 6500 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 6000 2.0 2.5 3.0 12 Ciss 4000 ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 3500 3000 Crss 2000 1500 1000 -VGS, Gate-Source Voltage [V] Capacitances [pF] 1.5 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature VDS = -20V 10 Coss 2500 1.0 -VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4500 ※ Notes : 1. VGS = 0V 2. 250μs Pulse Test -1 0 -ID , Drain Current [A] 5000 10 10 0.30 5500 8 Figure 2. Transfer Characteristics 0.35 0.00 6 -VGS , Gate-Source Voltage [V] -VDS, Drain-Source Voltage [V] VDS = -50V VDS = -80V 8 6 4 2 ※ Note : ID = -33.5 A 500 0 -1 10 0 10 1 10 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2000 Fairchild Semiconductor Corporation FQB34P10 / FQI34P10 Rev. C0 0 0 20 40 60 80 100 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics www.fairchildsemi.com FQB34P10 / FQI34P10 P-Channel MOSFET Typical Characteristics (Continued) 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance -BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = -250 μA 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ※ Notes : 1. VGS = -10 V 2. ID = -16.75 A 0.5 0.0 -100 200 -50 0 o TJ, Junction Temperature [ C] 50 100 150 200 o TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 40 Operation in This Area is Limited by R DS(on) 35 2 100 μs -ID, Drain Current [A] -ID, Drain Current [A] 10 1 ms 10 ms 1 10 DC 0 10 ※ Notes : o 1. TC = 25 C o 2. TJ = 175 C 3. Single Pulse 0 10 25 20 15 10 5 -1 10 30 1 0 25 2 10 10 50 -VDS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area 10 75 100 125 150 175 TC, Case Temperature [℃] Figure 10. Maximum Drain Current vs. Case Temperature 0 Zθ JC(t), Thermal Response D = 0 .5 0 .2 10 ※ N otes : 1. Z θ JC (t) = 0.97 ℃ /W M ax. 2. D uty Factor, D = t 1 /t 2 3. T JM - T C = P D M * Z θ JC (t) 0 .1 -1 0 .0 5 PDM 0 .0 2 0 .0 1 t1 s in g le p u ls e 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u lse D u ra tio n [se c ] Figure 11. Transient Thermal Response Curve ©2000 Fairchild Semiconductor Corporation FQB34P10 / FQI34P10 Rev. C0 www.fairchildsemi.com FQB34P10 / FQI34P10 P-Channel MOSFET Typical Characteristics FQB34P10 / FQI34P10 P-Channel MOSFET Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ 200nF 12V Qg -10V 300nF VDS VGS Qgs Qgd DUT -3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG RL t on VDD VGS td(on) VGS t off tr td(off) tf 10% DUT -10V VDS 90% Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS tp ID RG VDD DUT -10V tp ©2000 Fairchild Semiconductor Corporation FQB34P10 / FQI34P10 Rev. C0 VDD Time VDS (t) ID (t) IAS BVDSS www.fairchildsemi.com FQB34P10 / FQI34P10 P-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms + VDS DUT _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Compliment of DUT (N-Channel) VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V Body Diode Reverse Current IRM di/dt IFM , Body Diode Forward Current VDS ( DUT ) VSD Body Diode Forward Voltage Drop VDD Body Diode Recovery dv/dt ©2000 Fairchild Semiconductor Corporation FQB34P10 / FQI34P10 Rev. C0 www.fairchildsemi.com 4.50 ±0.20 9.90 ±0.20 +0.10 2.00 ±0.10 2.54 TYP (0.75) ° ~3 0° 0.80 ±0.10 1.27 ±0.10 2.54 ±0.30 15.30 ±0.30 0.10 ±0.15 2.40 ±0.20 4.90 ±0.20 1.40 ±0.20 9.20 ±0.20 1.30 –0.05 1.20 ±0.20 (0.40) D2-PAK +0.10 0.50 –0.05 2.54 TYP 9.20 ±0.20 (2XR0.45) 4.90 ±0.20 15.30 ±0.30 10.00 ±0.20 (7.20) (1.75) 10.00 ±0.20 (8.00) (4.40) 0.80 ±0.10 Dimensions in Millimeters ©2000 Fairchild Semiconductor Corporation FQB34P10 / FQI34P10 Rev. C0 www.fairchildsemi.com FQB34P10 / FQI34P10 P-Channel MOSFET Package Dimensions (Continued) I2-PAK 4.50 ±0.20 (0.40) 9.90 ±0.20 +0.10 MAX13.40 9.20 ±0.20 (1.46) 1.20 ±0.20 1.30 –0.05 0.80 ±0.10 2.54 TYP 2.54 TYP 10.08 ±0.20 1.47 ±0.10 MAX 3.00 (0.94) 13.08 ±0.20 ) 5° (4 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters ©2000 Fairchild Semiconductor Corporation FQB34P10 / FQI34P10 Rev. C0 www.fairchildsemi.com FQB34P10 / FQI34P10 P-Channel MOSFET Package Dimensions *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2000 Fairchild Semiconductor Corporation FQB34P10 / FQI34P10 Rev. C0 www.fairchildsemi.com FQB34P10 / FQI34P10 P-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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