N-Channel PowerTrench® MOSFET 150V, 10A, 77mΩ Features Description • RDS(on) = 60mΩ ( Typ.)@ VGS = 10V, ID = 10A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) Application • High Power and Current Handling Capability • DC to DC Converters • RoHS Compliant • Synchronous Rectification for Server/Telecom PSU • Battery Charger • AC Motor Drives and Uninterruptible Power Supplies • Off-line UPS D G GD S TO-220F (Retractable) S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage Ratings 150 Units V ±20 V -Continuous (TC = 25oC,Silicon Limited) 10 ID Drain Current -Continuous (TC = 100oC,Silicon Limited) 7 IDM Drain Current - Pulsed (Note 1) 40 A EAS Single Pulsed Avalanche Energy (Note 2) 35 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL - Derate above 25oC A 20 W 0.16 W/oC -55 to +150 o C 300 o C Thermal Characteristics Symbol Parameter Ratings RθJC Thermal Resistance, Junction to Case 5.9 RθJA Thermal Resistance, Junction to Ambient 62.5 ©2011 Fairchild Semiconductor Corporation FDPF770N15A Rev. A1 1 Units o C/W www.fairchildsemi.com FDPF770N15A N-Channel PowerTrench® MOSFET April 2011 FDPF770N15A Device Marking FDPF770N15A Device FDPF770N15A Package TO-220F Reel Size - Tape Width - Quantity 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units 150 - - V - 0.1 - V/oC μA Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250μA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS = 120V, VGS = 0V - - 1 VDS = 120V, TC = 125oC - - 500 IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 2.0 - 4.0 V - 60 77 mΩ - 15 - S - 575 765 pF - 64 85 pF pF ID = 250μA, Referenced to 25oC nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10V, ID = 10A VDS = 10V, ID = 10A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss(er) Energy Related Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance (G-S) VDS = 75V, VGS = 0V f = 1MHz - VDS = 75V,VGS = 0V VDS = 75V,ID = 10A VGS = 10V (Note 4.5) Drain Open,f = 1MHz 3.9 - 113 - pF 8.6 11.2 nC nC 3.2 - - 1.2 - nC - 1.9 - nC - 0.5 - Ω - 12 34 ns - 8 26 ns - 15 40 ns - 3 16 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 75V, ID = 10A VGS = 10V, RGEN = 4.7Ω (Note 4.5) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 10 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 40 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 10A - - 1.25 V trr Reverse Recovery Time - 59 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 10A,VDD = 75V dIF/dt = 100A/μs (Note 4) - 124 - nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Starting TJ = 25°C, L = 3mH, ISD = 4.8A 3. ISD ≤ 10A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDPF770N15A Rev. A1 2 www.fairchildsemi.com FDPF770N15A N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 2. Transfer Characteristics 50 VGS = 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V 10 *Notes: 1. VDS = 10V 2. 250μs Pulse Test ID, Drain Current[A] ID, Drain Current[A] Figure 1. On-Region Characteristics 100 10 o 150 C o 25 C o -55 C *Notes: 1. 250μs Pulse Test 1 o 2. TC = 25 C 1 VDS, Drain-Source Voltage[V] 1 7 3 4 5 6 VGS, Gate-Source Voltage[V] Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.10 100 0.09 0.08 VGS = 10V 0.07 VGS = 20V 0.06 o 150 C 10 o 25 C *Notes: 1. VGS = 0V o 0.05 2. 250μs Pulse Test *Note: TC = 25 C 0 10 20 30 ID, Drain Current [A] 40 1 0.4 50 Figure 5. Capacitance Characteristics 1.4 10 VGS, Gate-Source Voltage [V] Ciss 100 Coss 10 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 1000 Capacitances [pF] 7 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage IS, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 0.5 0.1 *Note: 1. VGS = 0V 2. f = 1MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 0.1 FDPF770N15A Rev. A1 6 4 2 Crss *Note: ID = 10A 0 1 10 VDS, Drain-Source Voltage [V] VDS = 30V VDS = 75V VDS = 120V 8 100 200 3 0 3 6 Qg, Total Gate Charge [nC] 9 www.fairchildsemi.com FDPF770N15A N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.4 1.08 1.04 1.00 0.96 *Notes: 1. VGS = 0V 2. ID = 250μA 0.92 -80 -40 0 40 80 120 o TJ, Junction Temperature [ C] RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.10 2.0 1.6 1.2 0.8 0.4 -80 160 Figure 9. Maximum Safe Operating Area 160 10 10 8 100μs ID, Drain Current [A] ID, Drain Current [A] -40 0 40 80 120 o TJ, Junction Temperature [ C] Figure 10. Maximum Drain Current vs. Case Temperature 100 1ms 1 Operation in This Area is Limited by R DS(on) 0.1 *Notes: o 10ms 100ms DC 1. TC = 25 C 4 2 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] VGS= 10V 6 o 0.01 0.005 *Notes: 1. VGS = 10V 2. ID = 10A o RθJC = 5.9 C/W 0 25 200 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Eoss vs. Drain to Source Voltage 0.8 EOSS, [μJ] 0.6 0.4 0.2 0.0 0 FDPF770N15A Rev. A1 30 60 90 120 VDS, Drain to Source Voltage [V] 150 4 www.fairchildsemi.com FDPF770N15A N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDPF770N15A N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve Thermal Response [ZθJC] 8 0.5 0.2 1 t1 0.05 t2 *Notes: 0.02 o 0.01 0.1 0.05 -5 10 FDPF770N15A Rev. A1 PDM 0.1 1. ZθJC(t) = 5.9 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse -4 10 -3 -2 -1 10 10 10 1 Rectangular Pulse Duration [sec] 5 10 100 www.fairchildsemi.com FDPF770N15A N-Channel PowerTrench® MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDPF770N15A Rev. A1 6 www.fairchildsemi.com FDPF770N15A N-Channel PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FDPF770N15A Rev. A1 7 www.fairchildsemi.com FDPF770N15A N-Channel PowerTrench® MOSFET Package Dimensions TO-220F (Retractable) * Front/Back Side Isolation Voltage : AC 2500V Dimensions in Millimeters FDPF770N15A Rev. A1 8 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I53 FDPF770N15A Rev. 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