FREESCALE MHVIC2115R2

Freescale Semiconductor
Technical Data
Document Number: MHVIC2115R2
Rev. 4, 8/2006
RF LDMOS Wideband Integrated
Power Amplifier
MHVIC2115R2
Final Application
• Typical W - CDMA Performance: - 45 dBc ACPR, 2110 - 2170 MHz, VDD =
27 Volts, IDQ1 = 56 mA, IDQ2 = 61 mA, IDQ3 = 117 mA, Pout = 34 dBm,
3GPP Test Model 1, Measured in a 1.0 MHz BW @ 4 MHz offset, 64 DTCH
Power Gain — 30 dB
PAE = 16%
Driver Application
• Typical W - CDMA Performance: - 53 dBc ACPR, 2110 - 2170 MHz, VDD =
26 Volts, IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA, Pout = 23 dBm,
3GPP Test Model 1, Measured in a 3.84 MHz BW @ 5 MHz offset, 64 DTCH
Power Gain — 34 dB
• Gain Flatness = 0.3 dB from 2110 - 2170 MHz
• P1dB = 15 Watts, Gain Flatness = 0.2 dB from 2110 - 2170 MHz
• Capable of Handling 3:1 VSWR, @ 26 Vdc, 2140 MHz, 15 Watts CW
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
• Integrated Temperature Compensation with Enable/Disable Function
• Integrated ESD Protection
• In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.
2170 MHz, 26 V, 23/34 dBm
W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIER
16
1
CASE 978 - 03
PFP - 16
Replaced by MHVIC2115NR2. There are
no form, fit or function changes with this
part replacement. N suffix indicates RoHS
compliant part.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +65
Vdc
Gate - Source Voltage
VGS
- 0.5, +15
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
150
°C
VGS3
VGS2
VGS1
Quiescent Current
Temperature Compensation
RFin IC
VDS1
VDS2
VDS3/RFout
3 Stages IC
1
16
2
15
N.C.
VDS3/RFout
VGS2
3
14
VDS3/RFout
VGS1
4
13
VDS3/RFout
RFin
5
12
VDS3/RFout
RFin
6
11
VDS3/RFout
VDS1
VDS2
7
8
10
9
VDS3/RFout
N.C.
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 1. Block Diagram
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
N.C.
VGS3
ARCHIVE INFORMATION
ARCHIVE INFORMATION
The MHVIC2115R2 wideband integrated circuit is designed for base station
applications. It uses Freescale’s newest High Voltage (26 to 28 Volts) LDMOS
IC technology and integrates a multi - stage structure. Its wideband On - Chip
matching design makes it usable from 1600 to 2600 MHz. The linearity
performances cover W - CDMA modulation formats.
Figure 2. Pin Connections
MHVIC2115R2
1
Table 2. Thermal Characteristics
Characteristic
Symbol
Thermal Resistance, Junction to Case
Value
Unit
RθJC
°C/W
Driver Application
(Pout = +0.2 W CW)
Stage 1, 26 Vdc, IDQ = 96 mA
Stage 2, 26 Vdc, IDQ = 204 mA
Stage 3, 26 Vdc, IDQ = 111 mA
3.5
Output Application
(Pout = +2.5 W CW)
Stage 1, 27 Vdc, IDQ = 56 mA
Stage 2, 27 Vdc, IDQ = 61 mA
Stage 3, 27 Vdc, IDQ = 117 mA
2.7
Table 3. ESD Protection Characteristics
Test Conditions
Class
1 (Minimum)
Machine Model
M1 (Minimum)
Charge Device Model
C2 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
3
240
°C
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
W - CDMA Characteristics (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA,
Pout = 23 dBm, 2110 - 2170 MHz
Power Gain
Gps
31
34
—
dB
Gain Flatness
GF
—
0.3
0.5
dB
Input Return Loss
IRL
—
- 12
- 10
dB
Group Delay
—
—
1.7
—
ns
Phase Linearity
—
—
0.2
—
°
1 - Carrier W - CDMA Conditions: Adjacent Channel Power Ratio
@ Pout = 23 dBm, 5 MHz Offset
ACPR
—
- 53
- 50
dBc
1 - Carrier W - CDMA Conditions: Adjacent Channel Power Ratio
@ Pout = 28 dBm, 5 MHz Offset
ACPR
—
- 50
—
dBc
W - CDMA Characteristics (In Freescale Test Fixture, 50 ohm system) VDD = 27 Vdc, IDQ1 = 56 mA, IDQ2 = 61 mA, IDQ3 = 117 mA,
Pout = 34 dBm, 2110 - 2170 MHz
Power Gain
Gps
—
30
—
dB
Gain Flatness
GF
—
0.2
—
dB
Input Return Loss
IRL
—
- 12
—
dB
Power Added Efficiency
PAE
—
16
—
%
ACPR
—
- 45
—
dBc
1 - Carrier W - CDMA Conditions: Adjacent Channel Power Ratio
@ Pout = 34 dBm, 4 MHz Offset
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Human Body Model
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MHVIC2115R2
2
RF Device Data
Freescale Semiconductor
1
16
2
15
Vbias3
+
C1
C2
C15
Vbias2
3
+
R2
C5
14
C3
Vbias1
4
13
5
12
RF
OUTPUT
+
R1
C14
RF
INPUT
C4
6
VD1
ARCHIVE INFORMATION
C16
+
C21
VD2
+
C13
7
+
C8
C7
C1, C5, C8, C12, C14, C19
C2, C3, C4, C7, C11, C18
C6, C10, C17
C9, C15, C16
VD3
10
+
C17
8
C11
11
C6
+
C12
Quiescent Current
Temperature Compensation
C9
C18
+
C19
C20
9
C10
1 mF SMT Tantalum Chip Capacitors
0.01 mF Chip Capacitors (0805C103K5RACTR)
6.8 pF Chip Capacitors, ACCU - P (AVX 08051J6R8BBT)
1.8 pF Chip Capacitors, ACCU - P (AVX 08051J1R8BBT)
C13, C20, C21 330 mF Electrolytic Capacitors
(MCR35V337M10X16)
R1, R2, R3
1 kW Chip Resistors (0805)
PCB
Arlon, 0.020,, er = 2.55
Figure 3. MHVIC2115R2 Demo Board Schematic
ARCHIVE INFORMATION
R3
MHVIC2115R2
RF Device Data
Freescale Semiconductor
3
Vbias1
Vbias2
Vbias3
R1
R2
R3
VGS
C2
C14
C5
C4
VG1
VG2
VG3
C1
MHVIC2115R2
Rev 1
C3
ARCHIVE INFORMATION
C9
C16
C6
C10
C17
C7
C18
C12
C8
C19
C11
C21
VDD1
C13
VDD2
C20
VDD3
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 4. MHVIC2115R2 Demo Board Component Layout
ARCHIVE INFORMATION
C15
MHVIC2115R2
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
50
0
40
1.8
1.6
−5
S21
TC = 85_C
1.4
25_C
20
−15
S11
10
−20
0
−25
S11 (dB)
−10
DELAY, (nSEC)
S21 (dB)
30
1.2
−30_C
1
0.8
0.6
0.4
VDD = 27 Vdc, Pout = 23 dBm CW
0.2
0
2100
IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA
2110
2120
2130
2140
2150
2160
f, FEQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 5. Broadband Frequency Response
Figure 6. Delay versus Frequency
40
2170
2180
2170
2180
20
38
TC = −30_C
37
36
25_C
35
34
85_C
33
32
IRL, INPUT RETURN LOSS (dB)
G ps , POWER GAIN (dB)
39
TC = 85_C
15
25_C
−30_C
10
5
VDD = 27 Vdc, Pout = 23 dBm CW
VDD = 27 Vdc, Pout = 23 dBm CW
31
30
2100
IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA
IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA
2110
2120
2130
2140
2150
2160
2170
0
2100
2180
2110
2120
2130
2140
2150
2160
f, FREQUENCY (MHz)
f, FREQUENCY, (MHz)
Figure 7. Power Gain versus Frequency
Figure 8. Input Return Loss versus Frequency
40
70
39
37
65
TC = 25_C
TC = −30_C
S21 PHASE(_)
38
36
25_C
35
34
85_C
33
ARCHIVE INFORMATION
−30
VDD = 27 Vdc, Pout = 23 dBm CW
IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA
−20
−35
1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000
G ps , POWER GAIN (dB)
ARCHIVE INFORMATION
−10
60
−30_C
55
50
85_C
32
45
VDD = 27 Vdc, f = 2140 MHz
31
IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA
30
20
25
30
35
VDD = 27 Vdc, f = 2140 MHz
IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA
40
40
45
20
25
30
35
40
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
Figure 9. Power Gain versus Output Power
Figure 10. S21 Phase versus Output Power
45
MHVIC2115R2
RF Device Data
Freescale Semiconductor
5
−40
VDD = 27 Vdc
3GPP Test Model 1
64 DPCH
−42
−44
−45
−46
VDD = 27 Vdc
Pout = 23 dBm Two−Tone Avg.
Tone Spacing = 100 kHz
IDQ3 = 100 mA
IMR (dBc)
−50
−48
−50
2110 MHz
−52
2170 MHz
−54
−58
19
21
3rd Order
23
25
27
29
31
111 mA
100 mA
−65
2140 MHz
17
−55
−60
−56
−60
15
122 mA
5th Order
33
−70
2000
35
122 mA
2050
2100
2150
2200
2250
Pout, OUTPUT POWER (dBm)
f, FREQUENCY (MHz)
Figure 11. W - CDMA ACPR versus Output Power
Figure 12. Two - Tone IMR versus Frequency
−50
6.00
−52
5.75
5.50
VBIAS1
5.25
5.00
VBIAS2
−54
3rd Order
−56
−58
VDD = 27 Vdc, f = 2140
Pout = 23 dBm, Two−Tone Avg.
−60
−62
5th Order
−64
−66
−68
−70
0
5
10
15
20
25
4.75
4.50
4.25
4.00
VDD = 27 Vdc
R1 = R2 = R3 = 1000 Ohms
VBIAS3
3.75
3.50
3.25
3.00
−40 −30 −20 −10
0
10 20 30 40
50 60 70 80 90 100
4.20
2.00
4.10
1.80
4.00
1.60
Vgs1 & Vgs2
Igs1 & Igs2
3.80
1.20
VDD = 27 Vdc
R1 = R2 = R3 = 1000 Ohms
3.70
3.60
1.40
Vgs3
1.00
0.80
3.50
0.60
3.40
0.40
Igs3
3.30
3.20
−40 −30 −20 −10
Igs, GATE BIAS CURRENT (mA)
T, TEMPERATURE (C)
Figure 14. Fixture Bias versus Temperature
Vgs, IC GATE BIAS VOLTAGE (V)
TONE SPACING (MHz)
Figure 13. Two - Tone Broadband Performance
3.90
2300
ARCHIVE INFORMATION
−40
Vbias, FIXTURE BIAS VOLTAGE (V)
IMD, INTERMODULATION DISTORTION (dBc)
ARCHIVE INFORMATION
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
TYPICAL CHARACTERISTICS
0.20
0.00
0
10 20 30 40
50 60 70 80 90 100
T, TEMPERATURE (C)
Figure 15. Gate Bias versus Temperature
MHVIC2115R2
6
RF Device Data
Freescale Semiconductor
f = 2170 MHz
f = 2110 MHz
Zin
Zload
f = 2170 MHz
f = 2110 MHz
VDD = 27 Vdc, IDQ = 1411 mA, Pout = 15 W Avg.
Zin
f
MHz
Zin
Ω
Zload
Ω
2110
72.55 + j12.8
4.25 + j1.00
2140
71.40 + j9.9
4.13 + j1.37
2170
70.20 + j7.1
4.12 + j1.46
= Device input impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Z
in
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Zo = 50 Ω
Z
load
Figure 16. Series Equivalent Input and Load Impedance
MHVIC2115R2
RF Device Data
Freescale Semiconductor
7
PACKAGE DIMENSIONS
h X 45 _
A
1
14 x e
16
D
e/2
D1
8
9
E1
8X
ARCHIVE INFORMATION
bbb
M
B
BOTTOM VIEW
E
C B
S
ÉÉ
ÇÇ
ÇÇ
ÉÉ
b1
Y
c
A A2
c1
b
DATUM
PLANE
SEATING
PLANE
H
M
ccc C
q
W
GAUGE
PLANE
W
L
C A
SECT W - W
L1
C
aaa
A1
1.000
0.039
DETAIL Y
CASE 978 - 03
ISSUE C
PFP- 16
S
NOTES:
1. CONTROLLING DIMENSION: MILLIMETER.
2. DIMENSIONS AND TOLERANCES PER ASME
Y14.5M, 1994.
3. DATUM PLANE −H− IS LOCATED AT BOTTOM OF
LEAD AND IS COINCIDENT WITH THE LEAD
WHERE THE LEAD EXITS THE PLASTIC BODY AT
THE BOTTOM OF THE PARTING LINE.
4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE PROTRUSION IS
0.250 PER SIDE. DIMENSIONS D AND E1 DO
INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE −H−.
5. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE
b DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
DIM
A
A1
A2
D
D1
E
E1
E2
L
L1
b
b1
c
c1
e
h
q
aaa
bbb
ccc
MILLIMETERS
MIN
MAX
2.000
2.300
0.025
0.100
1.950
2.100
6.950
7.100
4.372
5.180
8.850
9.150
6.950
7.100
4.372
5.180
0.466
0.720
0.250 BSC
0.300
0.432
0.300
0.375
0.180
0.279
0.180
0.230
0.800 BSC
−−− 0.600
0_
7_
0.200
0.200
0.100
ARCHIVE INFORMATION
E2
MHVIC2115R2
8
RF Device Data
Freescale Semiconductor
Home Page:
www.freescale.com
E - mail:
[email protected]
USA/Europe or Locations Not Listed:
Freescale Semiconductor
Technical Information Center, CH370
1300 N. Alma School Road
Chandler, Arizona 85224
+1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130
[email protected]
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
[email protected]
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1 - 8 - 1, Shimo - Meguro, Meguro - ku,
Tokyo 153 - 0064
Japan
0120 191014 or +81 3 5437 9125
[email protected]
Asia/Pacific:
Freescale Semiconductor Hong Kong Ltd.
Technical Information Center
2 Dai King Street
Tai Po Industrial Estate
Tai Po, N.T., Hong Kong
+800 2666 8080
[email protected]
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
P.O. Box 5405
Denver, Colorado 80217
1 - 800 - 441 - 2447 or 303 - 675 - 2140
Fax: 303 - 675 - 2150
[email protected]
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
ARCHIVE INFORMATION
ARCHIVE INFORMATION
How to Reach Us:
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2006. All rights reserved.
RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical
characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further
information, see http://www.freescale.com or contact your Freescale sales representative.
For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp.
MHVIC2115R2
Document
Number:Data
MHVIC2115R2
RF Device
Rev. 4,
8/2006
Freescale
Semiconductor
9