VSKCS408/060 Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 400 A FEATURES • 150 °C TJ operation • Low forward voltage drop • High frequency operation • Low thermal resistance • UL approved file E78996 • Compliant to RoHS Directive 2002/95/EC • Designed and qualified for industrial level ADD-A-PAK BENEFITS • Excellent thermal performances obtained by the usage of exposed direct bonded copper substrate PRODUCT SUMMARY • High surge capability IF(AV) 400 A • Easy mounting on heatsink ELECTRICAL DESCRIPTION MECHANICAL DESCRIPTION The ADD-A-PAK generation VII, new generation of ADD-A-PAK module, combines the excellent thermal performances obtained by the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplified internal structure with minimized number of interfaces. The VSKCS408/060 Schottky rectifier common cathode has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in high current switching power supplies, plating power supplies, UPS systems, converters, freewheeling diodes, welding, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Rectangular waveform VRRM IFSM tp = 5 μs sine VF 200 Apk, TJ = 125 °C TJ Range VALUES UNITS 400 A 60 V 25 500 A 0.71 V - 55 to 150 °C VSKCS408/060 UNITS 60 V VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage Document Number: 94637 Revision: 09-Mar-11 VRWM For technical questions, contact: [email protected] www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSKCS408/060 Vishay Semiconductors ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 400 A ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current SYMBOL per module per leg IF(AV) TEST CONDITIONS VALUES 50 % duty cycle at TC = 102 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse Following any rated load condition and with rated VRRM applied UNITS 400 200 25 500 A Maximum peak one cycle non-repetitive surge current IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 5.5 A, L = 1 mH 15 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 1 A SYMBOL TEST CONDITIONS VALUES UNITS 10 ms sine or 6 ms rect. pulse Repetitive avalanche current 3300 ELECTRICAL SPECIFICATIONS PARAMETER 200 A Maximum forward voltage drop VFM 400 A 200 A 400 A TJ = 25 °C 0.74 TJ = 25 °C 1.09 0.71 TJ = 125 °C 1.02 2.2 VR = Rated VR Maximum reverse leakage current IRM Maximum junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Typical series inductance LS Measured lead to lead 5 mm from package body Maximum voltage rate of change dV/dt Maximum RMS insulation voltage VINS TJ = 125 °C V 650 Rated VR 50 Hz mA 11 000 pF 5.0 nH 10 000 V/μs 3000 (1 min) 3600 (1 s) V VALUES UNITS - 55 to 150 °C THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case per leg RthJC Typical thermal resistance, case to heatsink per module RthCS DC operation 0.26 °C/W 0.1 Approximate weight Mounting torque ± 10 % to heatsink busbar Case style www.vishay.com 2 A mounting compound is recommended and the torque should be rechecked after a period of 3 h to allow for the spread of the compound. JEDEC For technical questions, contact: [email protected] 75 g 2.7 oz. 4 Nm 3 TO-240AA compatible Document Number: 94637 Revision: 09-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSKCS408/060 ADD-A-PAK Generation VII Vishay Semiconductors Power Modules Schottky Rectifier, 400 A 1000 10000 Reverse Current - IR (mA) 125°C 100 10 25°C 1 100 0.1 0.01 0 10 20 30 40 50 Reverse Voltage - VR (V) 60 Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 100000 Tj = 150°C 10 Junction Capacitance - CT (pF) Instantaneous Forward Current - IF (A) 150°C 1000 Tj = 125°C Tj = 25°C 1 0.0 0.2 0.4 0.6 0.8 1.0 10000 1000 1.2 0 Forward Voltage Drop - VFM (V) 10 20 30 40 50 60 Reverse Voltage - VR (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Thermal Impedance ZthJC (°C/W) 1 D = 0.75 0.1 D = 0.5 D = 0.33 D = 0.25 D = 0.2 0.01 0.001 1E-05 Single Pulse (Thermal Resistance) 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 1E+02 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94637 Revision: 09-Mar-11 For technical questions, contact: [email protected] www.vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSKCS408/060 ADD-A-PAK Generation VII Power Modules Schottky Rectifier, 400 A Vishay Semiconductors 250 Square wave (D=0.50) 80% rated Vr applied 140 Average Power Loss - (Watts) Allowable Case Temperature (°C) 160 120 100 DC 80 60 40 20 see note (1) 180° 120° 90° 60° 30° 200 150 DC RMS Limit 100 50 0 0 0 100 200 300 400 0 500 50 100 150 200 250 300 Average Forward Current - IF(AV) (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Non-Repetitive Surge Current - IFSM(A) Average Forward Current - IF(AV)(A) 100000 10000 1000 At Any Rated Load Condition And With Rated Vrrm Applied Following Surge 100 10 100 1000 10000 Square Wave Pulse Duration - tp (microsec) Fig. 7 - Maximum Non-Repetitive Surge Current L D.U.T. IRFP460 Rg = 25 Ω Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 94637 Revision: 09-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VSKCS408/060 ADD-A-PAK Generation VII Vishay Semiconductors Power Modules Schottky Rectifier, 400 A ORDERING INFORMATION TABLE Device code VS KC S 40 8 1 2 3 4 5 / 1 - Vishay Semiconductors product 2 - Circuit configuration: 060 6 KC = ADD-A-PAK - 2 diodes/common cathode 3 - S = Schottky diode 4 - Average rating (x 10) 5 - Product silicon identification 6 - Voltage rating (060 = 60 V) CIRCUIT CONFIGURATION (1) + (2) - (3) - LINKS TO RELATED DOCUMENTS Dimensions Document Number: 94637 Revision: 09-Mar-11 www.vishay.com/doc?95369 For technical questions, contact: [email protected] www.vishay.com 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors ADD-A-PAK Generation VII - Diode DIMENSIONS in millimeters (inches) 29 ± 0.5 (1 ± 0.020) 30 ± 0.5 (1.18 ± 0.020) 35 REF. 18 (0.7) REF. 24 ± 0.5 (1 ± 0.020) 6.7 ± 0.3 (0.26 ± 0.012) Viti M5 x 0.8 Screws M5 x 0.8 Document Number: 95369 Revision: 11-Nov-08 7 6 4 5 3 2 1 6.3 ± 0.2 (0.248 ± 0.008) 22.6 ± 0.2 (0.89 ± 0.008) 80 ± 0.3 (3.15 ± 0.012) 15 ± 0.5 (0.59 ± 0.020) 20 ± 0.5 (0.79 ± 0.020) 20 ± 0.5 (0.79 ± 0.020) 92 ± 0.75 (3.6 ± 0.030) For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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