VISHAY VSKCS408_11

VSKCS408/060
Vishay Semiconductors
ADD-A-PAK Generation VII
Power Modules Schottky Rectifier, 400 A
FEATURES
• 150 °C TJ operation
• Low forward voltage drop
• High frequency operation
• Low thermal resistance
• UL approved file E78996
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
ADD-A-PAK
BENEFITS
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
PRODUCT SUMMARY
• High surge capability
IF(AV)
400 A
• Easy mounting on heatsink
ELECTRICAL DESCRIPTION
MECHANICAL DESCRIPTION
The ADD-A-PAK generation VII, new generation of
ADD-A-PAK module, combines the excellent thermal
performances obtained by the usage of exposed direct
bonded copper substrate, with advanced compact simple
package solution and simplified internal structure with
minimized number of interfaces.
The VSKCS408/060 Schottky rectifier common cathode has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 150 °C junction temperature.
Typical applications are in high current switching power
supplies, plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF
200 Apk, TJ = 125 °C
TJ
Range
VALUES
UNITS
400
A
60
V
25 500
A
0.71
V
- 55 to 150
°C
VSKCS408/060
UNITS
60
V
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
VR
Maximum working peak reverse voltage
Document Number: 94637
Revision: 09-Mar-11
VRWM
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSKCS408/060
Vishay Semiconductors
ADD-A-PAK Generation VII
Power Modules Schottky Rectifier, 400 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
SYMBOL
per module
per leg
IF(AV)
TEST CONDITIONS
VALUES
50 % duty cycle at TC = 102 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
Following any rated
load condition and with
rated VRRM applied
UNITS
400
200
25 500
A
Maximum peak one cycle
non-repetitive surge current
IFSM
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 5.5 A, L = 1 mH
15
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
1
A
SYMBOL
TEST CONDITIONS
VALUES
UNITS
10 ms sine or 6 ms rect. pulse
Repetitive avalanche current
3300
ELECTRICAL SPECIFICATIONS
PARAMETER
200 A
Maximum forward voltage drop
VFM
400 A
200 A
400 A
TJ = 25 °C
0.74
TJ = 25 °C
1.09
0.71
TJ = 125 °C
1.02
2.2
VR = Rated VR
Maximum reverse leakage current
IRM
Maximum junction capacitance
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Typical series inductance
LS
Measured lead to lead 5 mm from package body
Maximum voltage rate of change
dV/dt
Maximum RMS insulation voltage
VINS
TJ = 125 °C
V
650
Rated VR
50 Hz
mA
11 000
pF
5.0
nH
10 000
V/μs
3000 (1 min)
3600 (1 s)
V
VALUES
UNITS
- 55 to 150
°C
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TEST CONDITIONS
TJ, TStg
Maximum thermal resistance,
junction to case per leg
RthJC
Typical thermal resistance,
case to heatsink per module
RthCS
DC operation
0.26
°C/W
0.1
Approximate weight
Mounting torque ± 10 %
to
heatsink
busbar
Case style
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A mounting compound is recommended and the torque
should be rechecked after a period of 3 h to allow for the
spread of the compound.
JEDEC
For technical questions, contact: [email protected]
75
g
2.7
oz.
4
Nm
3
TO-240AA compatible
Document Number: 94637
Revision: 09-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSKCS408/060
ADD-A-PAK Generation VII
Vishay Semiconductors
Power Modules Schottky Rectifier, 400 A
1000
10000
Reverse Current - IR (mA)
125°C
100
10
25°C
1
100
0.1
0.01
0
10
20
30
40
50
Reverse Voltage - VR (V)
60
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
100000
Tj = 150°C
10
Junction Capacitance - CT (pF)
Instantaneous Forward Current - IF (A)
150°C
1000
Tj = 125°C
Tj = 25°C
1
0.0
0.2
0.4
0.6
0.8
1.0
10000
1000
1.2
0
Forward Voltage Drop - VFM (V)
10
20
30
40
50
60
Reverse Voltage - VR (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Thermal Impedance ZthJC (°C/W)
1
D = 0.75
0.1
D = 0.5
D = 0.33
D = 0.25
D = 0.2
0.01
0.001
1E-05
Single Pulse
(Thermal Resistance)
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
1E+02
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Document Number: 94637
Revision: 09-Mar-11
For technical questions, contact: [email protected]
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSKCS408/060
ADD-A-PAK Generation VII
Power Modules Schottky Rectifier, 400 A
Vishay Semiconductors
250
Square wave (D=0.50)
80% rated Vr applied
140
Average Power Loss - (Watts)
Allowable Case Temperature (°C)
160
120
100
DC
80
60
40
20
see note (1)
180°
120°
90°
60°
30°
200
150
DC
RMS Limit
100
50
0
0
0
100
200
300
400
0
500
50
100
150
200
250
300
Average Forward Current - IF(AV) (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Non-Repetitive Surge Current - IFSM(A)
Average Forward Current - IF(AV)(A)
100000
10000
1000
At Any Rated Load Condition
And With Rated Vrrm Applied
Following Surge
100
10
100
1000
10000
Square Wave Pulse Duration - tp (microsec)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
D.U.T.
IRFP460
Rg = 25 Ω
Current
monitor
High-speed
switch
Freewheel
diode
+ Vd = 25 V
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
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For technical questions, contact: [email protected]
Document Number: 94637
Revision: 09-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSKCS408/060
ADD-A-PAK Generation VII
Vishay Semiconductors
Power Modules Schottky Rectifier, 400 A
ORDERING INFORMATION TABLE
Device code
VS
KC
S
40
8
1
2
3
4
5
/
1
-
Vishay Semiconductors product
2
-
Circuit configuration:
060
6
KC = ADD-A-PAK - 2 diodes/common cathode
3
-
S = Schottky diode
4
-
Average rating (x 10)
5
-
Product silicon identification
6
-
Voltage rating (060 = 60 V)
CIRCUIT CONFIGURATION
(1)
+
(2)
-
(3)
-
LINKS TO RELATED DOCUMENTS
Dimensions
Document Number: 94637
Revision: 09-Mar-11
www.vishay.com/doc?95369
For technical questions, contact: [email protected]
www.vishay.com
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
ADD-A-PAK Generation VII - Diode
DIMENSIONS in millimeters (inches)
29 ± 0.5
(1 ± 0.020)
30 ± 0.5
(1.18 ± 0.020)
35 REF.
18 (0.7) REF.
24 ± 0.5
(1 ± 0.020)
6.7 ± 0.3 (0.26 ± 0.012)
Viti M5 x 0.8
Screws M5 x 0.8
Document Number: 95369
Revision: 11-Nov-08
7 6
4 5
3
2
1
6.3 ± 0.2 (0.248 ± 0.008)
22.6 ± 0.2
(0.89 ± 0.008)
80 ± 0.3 (3.15 ± 0.012)
15 ± 0.5 (0.59 ± 0.020)
20 ± 0.5 (0.79 ± 0.020)
20 ± 0.5 (0.79 ± 0.020)
92 ± 0.75 (3.6 ± 0.030)
For technical questions, contact: [email protected]
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Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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