Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF18060ALR3 LIFETIME BUY Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. • Typical GSM Performance @ 1805 MHz Power Gain — 13 dB @ 60 Watts Efficiency — 45% @ 60 Watts • Capable of Handling 10:1 VSWR, @ 26 Vdc, 1840 MHz, 60 Watts CW Output Power Features • Internally Matched for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 1805 - 1880 MHz, 60 W, 26 V LATERAL N - CHANNEL RF POWER MOSFET CASE 465 - 06, STYLE 1 NI - 780 Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +65 Vdc Gate - Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC ≥ 25°C Derate above 25°C PD 180 1.03 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value Unit RθJC 0.97 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model © Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor Class 2 (Minimum) M3 (Minimum) LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 Document Number: MRF18060A Rev. 11, 10/2008 MRF18060ALR3 1 Characteristic Symbol Min Typ Max Unit Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 μAdc) V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 6 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 μAdc) VGS(th) 2 — 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 500 mAdc) VGS(Q) 2.5 3.9 4.5 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.27 — Vdc Input Capacitance (Including Input Matching Capacitor in Package) (1) (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss — 160 — pF Output Capacitance (1) (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 740 — pF Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2.7 — pF Common - Source Amplifier Power Gain @ 60 W (VDD = 26 Vdc, IDQ = 500 mA, f = 1805 MHz) Gps 11.5 13 — dB Drain Efficiency @ 60 W (VDD = 26 Vdc, IDQ = 500 mA, f = 1805 MHz) η 43 45 — % IRL — — - 10 dB Off Characteristics LIFETIME BUY On Characteristics Dynamic Characteristics Functional Tests (In Freescale Test Fixture, 50 ohm system) Input Return Loss (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA, f = 1805 MHz) 1. Part is internally matched both on input and output. LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) MRF18060ALR3 2 RF Device Data Freescale Semiconductor R1 T1 Z6 VSUPPLY R3 C4 C1 C2 R5 Z1 Z2 LIFETIME BUY Z4 Z5 RF OUTPUT Z7 C7 Z3 C6 C5 C1 C2, C4, C7 C3 C5 C6 R1, R3 R2, R4 R5 T1 C3 R4 VBIAS RF INPUT + DUT 100 nF Chip Capacitor (1203) 10 pF Chip Capacitors 10 mF, 35 V Electrolytic Capacitor 1.2 pF Chip Capacitor 1.0 pF Chip Capacitor 2.2 kΩ Chip Resistors (0805) 2.7 kΩ Chip Resistors (0805) 1.1 kΩ Chip Resistor (0805) BC847 Transistor SOT - 23 Z1 Z2 Z3 Z4 Z5 Z6 Z7 0.47″ x 0.09″ 1.16″ x 0.09″ 0.57″ x 0.95″ 0.59″ x 1.18″ 1.26″ x 0.15″ 1.15″ x 0.09″ 0.37″ x 0.09″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Figure 1. 1805 - 1880 MHz Test Fixture Schematic VBIAS R2 R3 R1 VSUPPLY C3 C1 R4 C4 C2 T1 R5 C7 C6 C5 Ground Ground MRF18060 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 1805 - 1880 MHz Test Fixture Component Layout LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 R2 MRF18060ALR3 RF Device Data Freescale Semiconductor 3 VBIAS C1 T1 R1 R5 R2 VSUPPLY C2 C4 R3 T2 + C3 R4 C5 R6 LIFETIME BUY RF INPUT Z1 Z2 C6 C1 C2 C3, C5, C8 C4 C6 C7 R1 R2, R6 R3 R4 R5 Z3 Z6 Z4 RF OUTPUT Z5 C7 1 mF Chip Capacitor (0805) 100 nF Chip Capacitor (0805) 10 pF Chip Capacitors, ACCU - P (0805) 10 mF, 35 V Electrolytic Capacitor 1.8 pF Chip Capacitor, ACCU - P (0805) 1 pF Chip Capacitor, ACCU - P (0805) 10 Ω Chip Resistor (0805) 1 kΩ Chip Resistors (0805) 1.2 kΩ Chip Resistor (0805) 2.2 kΩ Chip Resistor (0805) 5 kΩ, SMD Potentiometer Z7 C8 T1 LP2951 Micro - 8 Voltage Regulator T2 BC847 SOT - 23 NPN Transistor Z1 0.159″ x 0.055″ Microstrip Z2 0.982″ x 0.055″ Microstrip Z3 0.087″ x 0.055″ Microstrip Z4 0.512″ x 0.787″ Microstrip Z5 0.433″ x 1.220″ Microstrip Z6 1.039″ x 0.118″ Microstrip Z7 0.268″ x 0.055″ Microstrip Substrate = 0.5 mm Teflon® Glass, εr = 2.55 Figure 3. 1800 - 2000 MHz Demo Board Schematic LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 ÎÎÎ ÎÎÎ ÎÎÎ MRF18060ALR3 4 RF Device Data Freescale Semiconductor Î ÎÎ Î Ground C4 R1 C1 R2 R3 T1 R4 T2 R5 C2 C3 C7 C5 R6 MRF18060 ÎÎ ÎÎÎ ÎÎ Î Î ÎÎ ÎÎÎ Î ÎÎ VSUPPLY C8 LIFETIME BUY C6 ÎÎ ÎÎ Î ÎÎ Î Î ÎÎ ÎÎ Î Î ÎÎ MRF18060 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 4. 1800 - 2000 MHz Demo Board Component Layout LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 VBIAS MRF18060ALR3 RF Device Data Freescale Semiconductor 5 100 15 90 13 500 mA 12 11 300 mA 10 9 VDD = 26 Vdc f = 1880 MHz 60 40 30 100 Pin = 6 W 70 3W 60 50 VDD = 26 Vdc IDQ = 500 mA 30 1W 20 0.5 W 55 70 1880 1900 Figure 7. Output Power versus Frequency 45 Pout 50 35 30 30 VDD = 26 Vdc IDQ = 500 mA f = 1880 MHz 20 1 2 3 4 Pin, INPUT POWER (WATTS) 5 Figure 8. Output Power and Efficiency versus Input Power 0 −2 Gps −4 13.5 −6 13.0 −8 12.5 −10 12.0 −12 11.5 −14 IRL 10.5 10.0 1800 25 20 15 0 14.5 11.0 40 40 15.0 14.0 G ps, POWER GAIN (dB) 50 h 60 0 1700 30 80 10 1840 1860 f, FREQUENCY (MHz) 28 60 0 1820 22 24 26 VDD, SUPPLY VOLTAGE (VOLTS) 90 10 1800 20 Figure 6. Output Power versus Supply Voltage 90 40 VDD = 26 Vdc IDQ = 500 mA 18 Figure 5. Power Gain versus Output Power 80 1W 20 10 0 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) LIFETIME BUY 10 Pout, OUTPUT POWER (WATTS) 2.5 W 50 8 1 Pin = 5 W 70 1900 f, FREQUENCY (MHz) −16 VDD = 26 Vdc IDQ = 500 mA 2000 Figure 9. Wideband Gain and IRL (at Small Signal) −18 −20 2100 IRL, INPUT RETURN LOSS (dB) 100 mA 80 6 η, DRAIN EFFICIENCY (%) IDQ = 750 mA 14 LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 16 Pout , OUTPUT POWER (WATTS) G ps, POWER GAIN (dB) TYPICAL CHARACTERISTICS (DATA TAKEN USING WIDEBAND DEMONSTRATION BOARD) MRF18060ALR3 6 RF Device Data Freescale Semiconductor Zload f = 1700 MHz f = 2100 MHz LIFETIME BUY f = 1700 MHz Zsource f = 2100 MHz VDD = 26 V, IDQ = 500 mA, Pout = 60 W CW f MHz Zsource Ω Zload Ω 1700 0.60 - j2.53 2.27 - j3.44 1800 0.80 - j3.20 2.05 - j3.05 1900 0.92 - j3.42 1.90 - j2.90 2000 1.07 - j3.59 1.64 - j2.88 2100 1.31 - j4.00 1.29 - j2.99 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 10. Series Equivalent Source and Load Impedance LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 Zo = 5 Ω MRF18060ALR3 RF Device Data Freescale Semiconductor 7 PACKAGE DIMENSIONS B G 2X 1 Q bbb M T A M B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. M 3 B K 2 (FLANGE) D bbb M T A M B M M bbb N M T A M B M ccc M T A M M aaa M T A M S (LID) ccc H R (INSULATOR) M T A M B (LID) B M (INSULATOR) B M C F E A A (FLANGE) T SEATING PLANE DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465 - 06 ISSUE G NI - 780 MRF18060ALR3 MRF18060ALR3 8 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date 11 Oct. 2008 Description • Data sheet revised to reflect part status change, p. 1, including use of applicable overlay. • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN12779, p. 1, 2 • Added Product Documentation and Revision History, p. 9 MRF18060ALR3 RF Device Data Freescale Semiconductor 9 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008. All rights reserved. MRF18060ALR3 Document Number: MRF18060A Rev. 11, 10/2008 10 RF Device Data Freescale Semiconductor