Order this document by MMBR521LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line Designed primarily for use in the high–gain, low–noise small–signal amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast switching times. • High Current Gain–Bandwidth Product — fT = 3.4 GHz (Typ) @ IC = – 35 mAdc (MMBR521LT1) fT = 4.2 GHz (Typ) @ IC = – 50 mAdc (MRF5211LT1) • Low Noise Figure @ f = 1.0 GHz — NF(matched) = 2.5 dB (Typ) (MMBR521LT1) NF(matched) = 2.8 dB (Typ) (MRF5211LT1) • High Power Gain — Gpe (matched) = 11 dB (Typ) IC = – 70 mA HIGH–FREQUENCY TRANSISTOR PNP SILICON • Guaranteed RF Parameters • Surface Mounted SOT–23 (MMBR521LT1) & SOT–143 (MRF5211LT1) Offer Improved RF Performance Lower Package Parasitics Higher Gain • Available in tape and reel packaging options: T1 suffix = 3,000 units per reel MAXIMUM RATINGS Ratings Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Power Dissipation (1) TC = 75°C, Derate linearly above TC = 75°C @ Symbol Value Unit VCEO VCBO –10 Vdc – 20 Vdc VEBO PD(max) All – 2.5 Vdc 0.333 4.44 W mW/°C Collector Current — Continuous IC – 70 mA Maximum Junction Temperature TJmax Tstg 150 °C – 55 to +150 °C Symbol Value Unit RθJC 225 °C/W Storage Temperature All CASE 318–08, STYLE 6 SOT–23 LOW PROFILE (TO–236AA/AB) MMBR521LT1 CASE 318A–05, STYLE 1 SOT–143 LOW PROFILE MRF5211LT1 THERMAL CHARACTERISTICS Ratings Thermal Resistance, Junction to Case (MMBR521LT1, MRF5211LT1) DEVICE MARKING MMBR521LT1 = 7M MRF5211LT1 = 04 NOTE: 1. Case Temperature is measured on the collector lead closest to the package. For case temperatures above + 75°C: PDISP(max) = (TJmax – TC) / RθJC REV 7 RF DEVICE DATA MOTOROLA Motorola, Inc. 1995 MMBR521LT1 MRF5211LT1 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) V(BR)CEO –10 –12 — Vdc Collector–Base Breakdown Voltage (IC = – 0.1 mAdc, IE = 0) V(BR)CBO – 20 — — Vdc Emitter–Base Breakdown Voltage (IE = – 50 µAdc, IC = 0) V(BR)EBO – 2.5 — — Vdc ICBO — — –10 µAdc hFE 25 — 125 — Ccb — 1.0 1.5 OFF CHARACTERISTICS Collector Cutoff Current (VCB = – 8.0 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = – 30 mAdc, VCE = – 5.0 Vdc) DYNAMIC CHARACTERISTICS Collector–Base Capacitance (VCB = – 6.0 Vdc, IE = 0, f = 1.0 MHz) Current Gain — Bandwidth Product (VCE = – 8.0 V, IC = – 35 mA, f = 1.0 GHz) (VCE = – 8.0 V, IC = – 50 mA, f = 1.0 GHz) fT pF GHz MMBR521LT1 MRF5211LT1 — — 3.4 4.2 — — 13 8.0 10 15 10 11 — — — — — — 1.5 2.5 2.8 2.5 3.5 3.5 FUNCTIONAL TESTS Power Gain at Minimum Noise Figure (VCE = – 6.0 V, IC = – 5.0 mA, f = 500 MHz) (VCE = – 6.0 V, IC = – 5.0 mA, f = 1.0 GHz) (VCE = – 6.0 V, IC = – 5.0 mA, f = 1.0 GHz) MMBR521LT1 MMBR521LT1 MRF5211LT1 GNFmin Noise Figure — Minimum (VCE = – 6.0 V, IC = – 5.0 mA, f = 500 MHz) (VCE = – 6.0 V, IC = – 5.0 mA, f = 1.0 GHz) (VCE = – 6.0 V, IC = – 5.0 mA, f = 1.0 GHz) MMBR521LT1 MMBR521LT1 MRF5211LT1 dB NFmin dB TYPICAL CHARACTERISTICS C ib , INPUT CAPACITANCE (pF) C, CAPACITANCE (pF) 3 2 Cob 1 0 0 –1 f = 1 MHz Ccb –2 –3 –4 –5 –6 –7 –8 VCB, COLLECTOR–BASE VOLTAGE (VOLTS) –9 –10 Figure 1. Junction Capacitance versus Voltage 4 3 2 1 0 f = 1 MHz 0 –2 –1 VBE, BASE–EMITTER VOLTAGE (VOLTS) –3 Figure 2. Input Capacitance versus Voltage VCE = – 6 Vdc VBE *MICROLAB *HW–XXN *AS APPLICABLE D.U.T. RF OUTPUT RF INPUT **SLUG TUNER *BIAS TEE **SLUG TUNER *BIAS TEE Figure 3. Functional Circuit Schematic MMBR521LT1 MRF5211LT1 2 **MICROLAB/FXR **SF — 11N < 1 GHz **SF — 311N ≥ 1 GHz MOTOROLA RF DEVICE DATA 20 4 VCE = 8 V 6V 3 2 1 ΓSOURCE = ΓOPT 18 16 GNF 14 4 12 VCE = – 6 V, IC = 5 mA 10 3 8 2 NFmin N F, NOISE FIGURE (dB) G NF , GAIN @ NOISE FIGURE (dB) f T, CURRENT GAIN BANDWIDTH PRODUCT (GHz) TYPICAL CHARACTERISTICS MMBR521LT1 1 0 – 20 – 40 – 60 IC, COLLECTOR CURRENT (mA) – 80 0.3 Figure 4. Current Gain Bandwidth Product versus Collector Current 0.4 0.5 0.6 0.8 FREQUENCY (GHz) 1.5 1.0 Figure 5. Minimum Noise Figure & Gain @ Noise Figure versus Frequency 3.0 2.8 15 GNF f = 500 MHz 2.6 2.4 14 VCE = – 6 V 13 2.2 12 2.0 11 1.8 10 1.6 NFmin 1.4 1.0 2.0 3.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 30 40 50 Figure 6. Minimum Noise Figure & Gain @ Noise Figure versus Collector Current MOTOROLA RF DEVICE DATA 12 11 GNF 10 f = 1000 MHz 4.5 4.0 9 VCE = – 6 V 8 3.5 3.0 7 2.5 NFmin N F, NOISE FIGURE (dB) 17 16 N F, NOISE FIGURE (dB) G NF , GAIN @ NOISE FIGURE (dB) G NF , GAIN @ NOISE FIGURE (dB) 18 2.0 1.0 2.0 3.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 30 40 50 Figure 7. Minimum Noise Figure & Gain @ Noise Figure versus Collector Current MMBR521LT1 MRF5211LT1 3 f T, GAIN BANDWIDTH PRODUCT (GHz) TYPICAL CHARACTERISTICS MRF5211LT1 VCE = – 8 Vdc Zo = 50 Ω f = 1 GHz 4 3 2 1 0 0 – 40 – 20 – 60 IC, COLLECTOR CURRENT (mA) Figure 8. Gain–Bandwidth Product versus Current GAIN AND NOISE FIGURE versus FREQUENCY 4 VCE = – 6 Vdc IC = – 5 mA CKT = FIGURE 3 32 VCE = – 6 Vdc IC = – 5 mA Zo = 50 Ω ΓS = ΓL = 0 3 2 NF 1 0 0.15 0.2 0.5 1 24 4 3 ΓS = Γopt GNF 16 2 8 1 0 0.15 2 NFmin 0.2 0.5 1 NF, NOISE FIGURE (dB) 5 40 GNF , GAIN (dB) NF, NOISE FIGURE (dB) 5 0 2 f, FREQUENCY (GHz) f, FREQUENCY (GHz) Figure 9. 50 Ohm Noise Figure Figure 10. Tuned Circuit 12 GNF , GAIN (dB) GNF VCE = – 6 Vdc CKT = FIGURE 3 ΓS = Γopt 15 4 10 3 NFmin 5 2 GNF , GAIN (dB) 20 NF, NOISE FIGURE (dB) 15 6 6 5 3 0 –10 – 20 – 30 – 40 – 50 IC, COLLECTOR CURRENT (mA) Figure 11. Tuned Circuit — Frequency 500 MHz MMBR521LT1 MRF5211LT1 4 0 4 NFmin 1 0 VCE = – 6 Vdc CKT = FIGURE 3 ΓS = Γopt GNF 9 0 –10 – 20 – 30 – 40 NF, NOISE FIGURE (dB) GAIN AND NOISE FIGURE versus CURRENT 25 3 2 – 50 IC COLLECTOR CURRENT (mA) Figure 12. Tuned Circuit — Frequency 1.0 GHz MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS — continued MRF5211LT1 GUmax = GUmax, GAIN (dB) 32 40 |S21|2 (1 – |S11|2)(1 – |S22|2) 24 16 8 0 0.15 VCE = – 8 Vdc IC = – 50 mA Zo = 50 Ω 32 VCE = – 8 Vdc IC = – 50 mA Zo = 50 Ω |S21 | 2, GAIN (dB) 40 24 16 8 0.2 0.5 1 2 0 0.15 0.2 0.5 1 2 f, FREQUENCY (GHz) f, FREQUENCY (GHz) Figure 13. GUmax versus Current Figure 14. Insertion Gain versus Frequency MOTOROLA RF DEVICE DATA MMBR521LT1 MRF5211LT1 5 S11 S21 S12 S22 VCE (Vdc) IC (mA) f (MHz) |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 6 5 100 300 500 700 900 1000 1500 2000 2500 3000 3500 4000 4500 5000 0.754 0.683 0.667 0.660 0.656 0.654 0.641 0.672 0.681 0.681 0.686 0.683 0.678 0.669 – 67 –132 –157 –171 179 175 158 140 124 110 96 84 73 64 11.453 6.106 3.954 2.890 2.294 2.086 1.442 1.108 0.917 0.793 0.716 0.674 0.653 0.653 141 105 89 78 69 65 48 36 26 18 13 9 6 3 0.040 0.065 0.071 0.078 0.085 0.091 0.130 0.188 0.261 0.343 0.426 0.503 0.568 0.620 59 39 39 44 50 53 64 69 66 60 52 43 34 24 0.818 0.549 0.472 0.452 0.449 0.451 0.480 0.466 0.483 0.493 0.500 0.502 0.503 0.507 – 24 – 37 – 40 – 44 – 49 – 52 – 66 – 79 – 94 –110 –126 –143 –160 –176 10 100 300 500 700 900 1000 1500 2000 2500 3000 3500 4000 4500 5000 0.632 0.618 0.618 0.616 0.615 0.613 0.601 0.633 0.642 0.646 0.656 0.662 0.664 0.664 – 92 –149 –168 –178 173 170 155 138 124 110 98 86 75 66 16.621 7.460 4.671 3.392 2.672 2.429 1.677 1.294 1.078 0.929 0.827 0.756 0.709 0.683 131 98 85 76 68 64 48 36 25 16 10 4 1 –3 0.032 0.050 0.061 0.076 0.092 0.100 0.150 0.208 0.273 0.346 0.422 0.494 0.554 0.609 55 47 53 58 62 63 66 66 62 56 49 41 32 24 0.694 0.417 0.358 0.346 0.347 0.352 0.382 0.371 0.391 0.408 0.421 0.431 0.442 0.455 – 33 – 41 – 44 – 47 – 52 – 55 – 68 – 80 – 94 –109 –124 –141 –158 –174 50 100 300 500 700 900 1000 1500 2000 2500 3000 3500 4000 4500 5000 0.547 0.606 0.616 0.616 0.616 0.615 0.606 0.643 0.654 0.662 0.672 0.680 0.682 0.679 –149 –174 177 171 165 163 150 135 122 108 96 84 74 64 21.107 7.891 4.811 3.480 2.746 2.479 1.717 1.327 1.097 0.940 0.825 0.743 0.688 0.658 115 90 80 72 65 61 46 33 22 13 6 1 –2 –5 0.017 0.037 0.058 0.080 0.102 0.113 0.169 0.229 0.292 0.359 0.427 0.493 0.551 0.601 63 68 73 73 73 72 69 65 60 54 47 39 31 22 0.441 0.260 0.239 0.242 0.248 0.255 0.293 0.289 0.315 0.337 0.356 0.373 0.391 0.409 – 43 – 42 – 44 – 48 – 54 – 57 – 71 – 82 – 96 –110 –126 –142 –159 –175 10 5 100 300 500 700 900 1000 1500 2000 2500 3000 3500 4000 4500 5000 0.792 0.681 0.652 0.639 0.631 0.628 0.616 0.644 0.654 0.661 0.670 0.672 0.671 0.665 – 59 –123 –150 –166 –177 179 161 142 126 111 98 85 73 63 11.498 6.513 4.278 3.142 2.491 2.264 1.560 1.199 0.985 0.843 0.749 0.690 0.656 0.649 144 108 91 80 71 67 50 37 26 18 12 8 5 3 0.036 0.061 0.068 0.073 0.081 0.086 0.120 0.171 0.238 0.314 0.399 0.479 0.549 0.609 62 41 40 44 49 53 64 69 68 63 56 47 38 28 0.848 0.598 0.518 0.496 0.489 0.492 0.514 0.500 0.516 0.523 0.529 0.528 0.524 0.523 – 21 – 32 – 36 – 39 – 44 – 46 – 58 – 70 – 83 – 98 –113 –129 –146 –162 10 10 100 300 500 700 900 1000 1500 2000 2500 3000 3500 4000 4500 5000 0.666 0.596 0.587 0.581 0.578 0.577 0.565 0.596 0.608 0.619 0.632 0.644 0.652 0.654 – 80 –141 –162 –174 177 174 158 140 126 112 99 87 75 65 17.255 8.143 5.139 3.741 2.947 2.670 1.856 1.431 1.177 1.008 0.886 0.797 0.732 0.694 135 101 87 78 70 66 50 38 26 17 9 3 –1 –4 0.030 0.047 0.059 0.072 0.086 0.095 0.139 0.191 0.253 0.319 0.393 0.465 0.532 0.589 58 48 53 58 61 63 66 66 64 59 52 44 36 28 0.738 0.465 0.404 0.388 0.387 0.389 0.413 0.402 0.420 0.434 0.444 0.453 0.457 0.465 – 28 – 37 – 38 – 41 – 45 – 48 – 60 – 70 – 82 – 96 –110 –126 –143 –159 Table 1. MMBR521LT1 Common Emitter S–Parameters MMBR521LT1 MRF5211LT1 6 MOTOROLA RF DEVICE DATA S11 S21 S12 S22 VCE (Vdc) IC (mA) f (MHz) |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ – 6.0 – 5.0 200 500 1000 1500 2000 0.82 0.81 0.79 0.76 0.74 – 114 – 158 175 158 143 7.9 4.0 2.0 1.3 1.0 118 88 67 50 38 0.07 0.08 0.08 0.07 0.08 35 21 21 30 47 0.59 0.40 0.37 0.43 0.47 – 46 – 54 – 68 – 82 – 95 –10 200 500 1000 1500 2000 0.78 0.79 0.77 0.74 0.71 – 137 – 168 169 155 140 10.6 4.9 2.5 1.6 1.2 109 84 66 50 39 0.05 0.06 0.06 0.08 0.10 32 28 39 49 55 0.43 0.26 0.24 0.29 0.32 – 63 – 75 – 87 – 97 – 106 – 50 200 500 1000 1500 2000 0.77 0.77 0.76 0.73 0.70 – 167 176 161 149 136 13.1 5.7 2.8 1.9 1.4 99 80 65 51 40 0.02 0.04 0.06 0.08 0.12 45 57 65 67 65 0.26 0.18 0.17 0.19 0.20 – 108 – 132 – 142 – 137 – 137 – 5.0 200 500 1000 1500 2000 0.82 0.80 0.78 0.75 0.72 – 109 – 154 175 159 143 8.1 4.2 2.2 1.4 1.0 119 90 67 50 37 0.07 0.08 0.08 0.07 0.09 36 22 22 31 43 0.62 0.42 0.38 0.43 0.46 – 43 – 52 – 65 – 78 – 89 –10 200 500 1000 1500 2000 0.77 0.77 0.76 0.73 0.70 – 132 – 167 169 155 140 11.2 5.2 2.6 1.7 1.3 110 86 67 51 39 0.05 0.06 0.06 0.07 0.10 33 29 39 49 54 0.45 0.27 0.25 0.29 0.31 – 61 – 70 – 81 – 90 – 98 – 50 200 500 1000 1500 2000 0.75 0.76 0.75 0.72 0.70 – 164 178 163 151 139 14.2 6.1 3.1 2.0 1.5 100 82 67 53 42 0.02 0.04 0.06 0.08 0.11 43 55 64 67 68 0.26 0.17 0.15 0.18 0.19 – 101 – 121 – 131 – 126 – 127 – 8.0 Table 2. MRF5211LT1 Common Emitter S–Parameters MOTOROLA RF DEVICE DATA MMBR521LT1 MRF5211LT1 7 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L 3 B S 1 DIM A B C D G H J K L S V 2 V G C H D J K CASE 318–08 ISSUE AE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. G 3 4 S B 1 F MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR A L INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 2 D H J C R STYLE 1: PIN 1. 2. 3. 4. COLLECTOR EMITTER EMITTER BASE DIM A B C D F G H J K L R S MILLIMETERS INCHES MIN MAX MIN MAX 2.80 3.04 0.110 0.120 1.20 1.39 0.047 0.055 0.84 1.14 0.033 0.045 0.39 0.50 0.015 0.020 0.79 0.93 0.031 0.037 1.78 2.03 0.070 0.080 0.013 0.10 0.0005 0.004 0.08 0.15 0.003 0.006 0.46 0.60 0.018 0.024 0.445 0.60 0.0175 0.024 0.72 0.83 0.028 0.033 2.11 2.48 0.083 0.098 K CASE 318A–05 ISSUE J Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 MMBR521LT1 MRF5211LT1 8 ◊ *MMBR521LT1/D* MMBR521LT1/D MOTOROLA RF DEVICE DATA