Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line !" Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times. • High Current–Gain — Bandwidth Product IC = 30 mA SURFACE MOUNTED HIGH–FREQUENCY TRANSISTOR NPN SILICON • Low Noise Figure @ f = 1.0 GHz — NF(matched) = 1.8 dB (Typ) (MRF9011LT1) NF(matched) = 1.9 dB (Typ) (MMBR901LT1, T3) • High Power Gain — Gpe(matched) = 13.5 dB (Typ) @ f = 1.0 GHz (MRF9011LT1) Gpe(matched) = 12.0 dB (Typ) @ f = 1.0 GHz (MMBR901LT1, T3) • Guaranteed RF Parameters (MRF9011LT1) • Surface Mounted SOT–23 & SOT–143 Offer Improved RF Performance Lower Package Parasitics High Gain CASE 318–08, STYLE 6 SOT–23 LOW PROFILE, MMBR901LT1, T3 • Available in tape and reel packaging options: T1 suffix = 3,000 units per reel T3 suffix = 10,000 units per reel CASE 318A–05, STYLE 1 SOT–143 LOW PROFILE, MRF9011LT1 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 15 Vdc Collector–Base Voltage VCBO 25 Vdc Emitter–Base Voltage VEBO 2.0 Vdc IC 30 mAdc PD(max) 0.300 Watt 4.00 mW/°C Tstg – 55 to +150 °C TJ(max) 150 °C Symbol Max Unit Tstg 150 °C Collector Current — Continuous Power Dissipation @ TC = 75°C (1) MMBR901LT1, T3; MRF9011LT1 Derate above 25°C Storage Temperature Range All Maximum Junction Temperature THERMAL CHARACTERISTICS Characteristic Storage Temperature Thermal Resistance, Junction to Case MRF9011LT1, MMBR901LT1, T3 RθJC °C/W 200 DEVICE MARKING MRF9011LT1 = 01 MMBR901LT1, T3 = 7A NOTE: 1. Case temperature measured on collector lead immediately adjacent to body of package. REV 8 MOTOROLA RF DEVICE DATA Motorola, Inc. 1997 MMBR901LT1, T3 MRF9011LT1 2–1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 15 — — Vdc Collector–Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 25 — — Vdc Emitter–Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO 2.0 — — Vdc ICBO — — 50 nAdc hFE 50 30 — 80 200 200 — OFF CHARACTERISTICS Collector Cutoff Current (VCB = 15 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 5.0 mAdc, VCE = 5.0 Vdc) MMBR901LT1, T3 MRF9011LT1 DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 15 mAdc, VCE = 10 Vdc, f = 1.0 GHz) MRF9011LT1 fT — 3.8 — GHz Collector–Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) MRF9011LT1 Ccb — 0.55 1.0 pF Power Gain at Minimum Noise Figure (VCE = 10 Vdc, IC = 5.0 mA, f = 1.0 GHz) MRF9011LT1 GNFmin — 13.5 — dB Minimum Noise Figure (Figure 3) (VCE = 10 Vdc, IC = 5.0 mA, f = 1.0 GHz) MRF9011LT1 NFmin — 1.8 — dB Insertion Gain in 50 Ω System (VCE = 10 Vdc, IC = 5.0 mA, f = 1.0 GHz) MRF9011LT1 S212 9.0 10.2 — dB — 1.9 — Cobo — — 1.0 pF Gpe — 12 — dB FUNCTIONAL TESTS Minimum Noise Figure (Figure 3) (VCE = 6.0 Vdc, IC = 5.0 mA, f = 1.0 GHz) (VCE = 10 Vdc, IC = 5.0 mA, f = 1.0 GHz) NFmin MMBR901LT1, T3 dB SMALL–SIGNAL CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IC = 5.0 mAdc, f = 1.0 GHz) MMBR901LT1 Common–Emitter Amplifier Gain (VCC = 6.0 Vdc, IC = 5.0 mAdc, f = 1.0 GHz) MMBR901LT1 MMBR901LT1, T3 MRF9011LT1 2–2 MOTOROLA RF DEVICE DATA 8 16 VCE = 10 Vdc f = 1 GHz 1.6 12 1.2 f = 1 MHz 0.8 7 6 GNF 5 4 8 ΓS = ΓL = 0 Zo = 50 OHMS NF 3 2 4 0.4 NF, NOISE FIGURE (dB) 2 G NF , GAIN (dB) C cb, COLLECTOR-BASE CAPACITANCE (pF) MRF9011LT1 CIRCUIT USED IS HP 11608A 1 0 0 2 4 6 8 10 12 14 VCB, COLLECTOR–BASE VOLTAGE (VOLTS) 16 0 0 Figure 1. Collector–Base Capacitance versus Collector–Base Voltage 3 6 9 12 15 18 21 IC, COLLECTOR CURRENT (mA) 24 27 0 30 Figure 2. Gain and Noise Figure versus Collector Current VCE VBE RF OUTPUT **SLUG TUNER RF INPUT *BIAS TEE **SLUG TUNER D.U.T. *BIAS TEE **MICROLAB/FXR **SF–11N FOR f < 1 GHz **SF–31N FOR f > 1 GHz Figure 3. MRF9011LT1 Functional Circuit Schematic MOTOROLA RF DEVICE DATA MMBR901LT1, T3 MRF9011LT1 2–3 MRF9011LT1 40 24 3 GNF 16 2 NF 5 4 8 VCE = 10 Vdc f = 1 GHz NF 4 1 8 6 12 G NF , GAIN (dB) CIRCUIT USED — SEE FIGURE 3 3 2 CIRCUIT USED — SEE FIGURE 3 0 0.1 0.2 0.5 1 f, FREQUENCY (GHz) 2 0 0 0 3 Figure 4. Gain and Noise Figure versus Frequency 24 27 30 0 30 VCE = 10 Vdc Zo = 50 OHMS 4 |S 21| 2, INSERTION GAIN (dB) Fτ , GAIN-BANDWIDTH PRODUCT (GHz) 9 12 15 18 21 IC, COLLECTOR CURRENT (mA) 1 Figure 5. Gain and Noise Figure versus Collector Current 5 3 2 VCE = 10 Vdc Zo = 50 OHMS IC = 5 mA 24 18 12 6 1 0 6 NF, NOISE FIGURE (dB) 7 GNF 4 NF, NOISE FIGURE (dB) G NF , GAIN (dB) 32 8 16 5 VCE = 10 Vdc IC = 5 mA 0 6 12 18 24 IC, COLLECTOR CURRENT (mA) 30 0 0.1 G Umax , MAXIMUM UNILATERAL GAIN (dB) Figure 6. Gain–Bandwidth Product versus Collector Current 0.2 0.3 0.5 1 2 f, FREQUENCY (GHz) 3 Figure 7. Insertion Gain versus Frequency 50 GUmax = 40 |S21|2 (1 – |S11|2)(1 – |S22|2) VCE = 10 Vdc Zo = 50 OHMS IC = 5 mA 30 20 10 0 0.1 0.2 0.3 0.5 1 2 f, FREQUENCY (GHz) 3 Figure 8. Maximum Unilateral Gain versus Frequency MMBR901LT1, T3 MRF9011LT1 2–4 MOTOROLA RF DEVICE DATA S11 S21 S12 S22 VCE (Vdc) IC (mA) f (MHz) |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 5.0 5.0 100 200 500 1000 2000 0.85 0.78 0.71 0.66 0.60 – 41 – 76 – 131 – 169 152 13.64 10.77 6.10 3.22 1.65 153 134 102 77 47 0.03 0.05 0.08 0.08 0.11 65 54 35 33 46 0.93 0.80 0.55 0.45 0.47 – 17 – 29 – 42 – 48 – 63 10 100 200 500 1000 2000 0.72 0.70 0.66 0.63 0.58 – 59 – 100 – 150 179 147 20.01 14.31 7.03 3.57 1.79 145 123 94 73 46 0.03 0.04 0.06 0.07 0.11 62 49 38 45 57 0.87 0.67 0.44 0.37 0.41 – 23 – 36 – 43 – 46 – 60 15 100 200 500 1000 2000 0.65 0.66 0.65 0.63 0.59 – 75 – 118 – 159 174 144 23.44 15.56 7.10 3.57 1.77 138 116 90 71 45 0.02 0.04 0.05 0.06 0.11 57 46 42 52 62 0.81 0.59 0.40 0.35 0.40 – 27 – 38 – 40 – 43 – 58 20 100 200 500 1000 2000 0.61 0.66 0.66 0.65 0.61 – 89 – 130 – 166 171 143 24.32 15.11 6.68 3.32 1.65 133 111 88 69 43 0.02 0.03 0.04 0.06 0.10 51 43 46 56 65 0.77 0.55 0.41 0.39 0.44 – 28 – 35 – 34 – 39 – 56 30 100 200 500 1000 2000 0.63 0.68 0.69 0.70 0.66 – 132 – 157 – 177 165 138 13.18 7.07 3.23 1.78 0.93 118 104 90 71 42 0.02 0.02 0.03 0.05 0.09 47 44 55 65 79 0.72 0.66 0.62 0.59 0.62 – 15 – 16 – 24 – 38 – 62 5.0 100 200 500 1000 2000 0.85 0.80 0.70 0.65 0.58 – 38 – 71 – 126 – 166 154 13.67 10.97 6.35 3.39 1.74 155 136 104 78 48 0.03 0.05 0.07 0.07 0.10 70 56 37 36 50 0.93 0.83 0.60 0.51 0.54 – 14 – 24 – 35 – 40 – 55 10 100 200 500 1000 2000 0.75 0.71 0.65 0.62 0.57 – 55 – 94 – 145 – 177 149 20.12 14.60 7.33 3.74 1.88 147 125 96 74 47 0.02 0.04 0.05 0.06 0.10 66 50 39 46 60 0.88 0.72 0.50 0.45 0.49 – 19 – 30 – 35 – 38 – 53 15 100 200 500 1000 2000 0.68 0.67 0.64 0.62 0.58 – 68 – 110 – 155 177 146 23.53 15.90 7.45 3.74 1.90 140 119 92 71 45 0.02 0.03 0.04 0.06 0.09 61 49 42 53 65 0.85 0.65 0.47 0.44 0.50 – 22 – 31 – 32 – 35 – 51 20 100 200 500 1000 2000 0.64 0.64 0.64 0.62 0.59 – 79 – 122 – 161 174 145 24.77 15.81 7.10 3.53 1.75 135 114 89 79 44 0.02 0.03 0.04 0.05 0.09 56 46 46 56 68 0.81 0.62 0.48 0.46 0.53 – 23 – 29 – 28 – 33 – 50 30 100 200 500 1000 2000 0.61 0.63 0.65 0.66 0.63 – 114 – 147 – 172 168 140 16.25 9.10 4.22 2.27 1.15 123 107 90 71 41 0.01 0.02 0.03 0.05 0.08 48 49 53 63 79 0.79 0.71 0.66 0.63 0.67 – 15 – 15 – 22 – 33 – 53 10 Table 1. MRF9011LT1 Common Emitter S–Parameters MOTOROLA RF DEVICE DATA MMBR901LT1, T3 MRF9011LT1 2–5 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L 3 B S 1 V 2 G C H D J K DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR CASE 318–08 ISSUE AF MMBR901LT1, T3 NOTES: 4. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 5. CONTROLLING DIMENSION: MILLIMETER. A L G 3 4 S B 1 F H 2 D J C R K DIM A B C D F G H J K L R S MILLIMETERS INCHES MIN MAX MIN MAX 2.80 3.04 0.110 0.120 1.20 1.39 0.047 0.055 0.84 1.14 0.033 0.045 0.39 0.50 0.015 0.020 0.79 0.93 0.031 0.037 1.78 2.03 0.070 0.080 0.013 0.10 0.0005 0.004 0.08 0.15 0.003 0.006 0.46 0.60 0.018 0.024 0.445 0.60 0.0175 0.024 0.72 0.83 0.028 0.033 2.11 2.48 0.083 0.098 STYLE 1: PIN 1. 2. 3. 4. COLLECTOR EMITTER EMITTER BASE CASE 318A–05 ISSUE R MRF9011LT1 MMBR901LT1, T3 MRF9011LT1 2–6 MOTOROLA RF DEVICE DATA Motorola reserves the right to make changes without further notice to any products herein. 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How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 MOTOROLA RF DEVICE DATA ◊ MMBR901LT1, T3MMBR901LT1/D MRF9011LT1 2–7