Order this document by MRF587/D SEMICONDUCTOR TECHNICAL DATA The RF Line . . . designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications. • Low Noise Figure — NF = 3.0 dB (Typ) @ f = 500 MHz, IC = 90 mA NF = 3.0 dB @ 0.5 GHz HIGH–FREQUENCY TRANSISTOR NPN SILICON • High Power Gain — GU(max) = 16.5 dB (Typ) @ f = 500 MHz • Ion Implanted • All Gold Metal System • High fT — 5.5 GHz • Low Intermodulation Distortion: TB3 = – 70 dB DIN = 125 dB µV • Nichrome Emitter Ballast Resistors MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 17 Vdc Collector–Base Voltage VCBO 34 Vdc Emitter–Base Voltage VEBO 2.5 Vdc Collector Current — Continuous IC 200 mAdc Total Device Dissipation @ TC = 50°C Derate above TC = 50°C PD 5.0 33 Watts mW/°C Storage Temperature Range Tstg – 65 to +150 °C TJ 200 °C Junction Temperature CASE 244A–01, STYLE 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) V(BR)CEO 17 — — Vdc Collector–Base Breakdown Voltage (IC = 1.0 mAdc, IE = 0) V(BR)CBO 34 — — Vdc Emitter–Base Breakdown Voltage (IC = 0, IE = 0.1 mAdc) V(BR)EBO 2.5 — — Vdc ICBO — — 50 µAdc hFE 50 — 200 — Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = 10 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (1) (IC = 50 mAdc, VCE = 5.0 Vdc) NOTE: 1. 300 µs pulse on Tektronix 576 or equivalent. (continued) REV 6 RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 MRF587 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit fT — 5.5 — GHz Ccb — 1.7 2.2 pF DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (2) (IC = 90 mAdc, VCE = 15 Vdc, f = 0.5 GHz) Collector–Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS Narrowband — Figure 15 (IC = 90 mA, VCC = 15 V, f = 0.5 GHz) Noise Figure Power Gain at Optimum Noise Figure dB NF GNF Broadband — Figure 16 (IC = 90 mA, VCC = 15 V, f = 0.3 GHz) Noise Figure Power Gain at Optimum Noise Figure — 11 3.0 13 4.0 — dB NF GNF — — 6.3 11 — — Triple Beat Distortion (IC = 50 mA, VCC = 15 V, PRef = 50 dBmV) (IC = 90 mA, VCC = 15 V, PRef = 50 dBmV) TB3 — – 70 — dB DIN 45004 (IC = 90 mA, VCC = 15 V) (IC = 90 mA, VCC = 15 V) DIN — 125 — dBµV GUmax — 16.5 — dB Maximum Available Power Gain (3) (IC = 90 mA, VCE = 15 Vdc, f = 0.5 GHz) NOTES: 2. Characterized on HP8542 Automatic Network Analyzer 3. GUmax = |S21|2 (1 – |S11|2)(1 – |S22|2) 10 30 NF, NOISE FIGURE (dB) GNF 7 27 24 21 6 18 5 15 4 12 3 9 N.F. 2 6 1 0 0.1 4 3 2 3 0.2 0.3 0.5 f, FREQUENCY (GHz) 0.7 Figure 1. Typical Noise Figure and Associated Gain versus Frequency MRF587 2 VCE = 15 V f = 300 MHz 5 NF, NOISE FIGURE (dB) VCE = 15 V IC = 90 mA G NF , GAIN AT NOISE FIGURE (dB) 9 8 6 0 0.9 10 1 0 50 100 150 IC, COLLECTOR CURRENT (mA) 200 Figure 2. Noise Figure versus Collector Current MOTOROLA RF DEVICE DATA 6 f = 500 MHz VCE = 15 V f T, GAIN-BANDWIDTH PRODUCT (GHz) GUmax, MAXIMUM AVAILABLE POWER GAIN (dB) 20 16 12 8 4 0 VCE = 15 V 5 4 3 2 f = 1000 MHz 1 0 50 100 150 IC, COLLECTOR CURRENT (mA) 200 100 150 50 IC, COLLECTOR CURRENT (mA) 0 Figure 3. GUmax versus Collector Current 200 Figure 4. Gain–Bandwidth Product versus Collector Current TYPICAL PERFORMANCE 7 10 7 CAPACITANCE (pF) NF, NOISE FIGURE (dB) 6 VCC = 15 V f = 300 MHz 5 4 CIRCUIT PER FIGURE 16 5 Cob 3 Ccb 2 3 2 1 40 50 80 90 100 60 70 IC, COLLECTOR CURRENT (mA) 110 120 3 5 2 VCB, COLLECTOR BASE VOLTAGE (V) 1 Figure 5. Broadband Noise Figure 7 10 Figure 6. Junction Capacitance versus Voltage 80 31 60 25 72 23 VCC = 15 V f = 200 MHz 21 19 68 CIRCUIT PER FIGURE 16 17 64 15 Pout , OUTPUT POWER (dBm) 27 Pout , OUTPUT POWER (dBm) Vout , OUTPUT VOLTAGE (dBmV) 29 76 3RD ORDER INTERCEPT 50 40 CIRCUIT PER FIGURE 16 +1 dB COMP. PT. 30 f1 = 205 MHz f2 = 211 MHz VCC = 15 V IC = 90 mA 20 13 60 40 50 80 90 100 60 70 IC, COLLECTOR CURRENT (mA) 110 Figure 7. 1.0 dB Compression Point versus Collector Current MOTOROLA RF DEVICE DATA 11 120 10 0 10 20 30 40 50 Pin, INPUT POWER (dBm) 60 70 80 Figure 8. Third Order Intercept Point MRF587 3 TYPICAL PERFORMANCE (continued) – 48 VCC = 15 V PRef = 50 dBmV @ 200 MHz – 64 CHR CIRCUIT PER FIGURE 16 – 56 TB3 , DISTORTION (dB) IMD, DISTORTION (dB) – 52 – 60 VCE = 15 V PRef = 50 dBmV CH13 TEST PER FIGURE 17 – 60 – 64 CIRCUIT PER FIGURE 16 – 68 – 72 TEST PER FIGURE 18 – 76 CH2 40 50 80 90 100 60 70 IC, COLLECTOR CURRENT (mA) 110 – 80 70 120 Figure 9. Second Order Distortion versus Collector Current 90 100 IC, COLLECTOR CURRENT (mA) 110 120 Figure 10. Triple Beat Distortion versus Collector Current – 10 VRef , OUTPUT VOLTAGE (dBµV) 140 VCC = 15 V PRef = 50 dBmV – 20 XMD 35, DISTORTION (dB) 80 – 30 CH13 CIRCUIT PER FIGURE 16 – 40 TEST PER FIGURE 19 – 50 – 60 40 50 80 90 100 60 70 IC, COLLECTOR CURRENT (mA) 110 Figure 11. 35–Channel X–Modulation Distortion versus Collector Current MRF587 4 120 VCC = 15 V 130 120 CIRCUIT PER FIGURE 16 110 TEST PER FIGURE 20 100 90 40 50 80 90 100 60 70 IC, COLLECTOR CURRENT (mA) 110 120 Figure 12. DIN 45004B versus Collector Current MOTOROLA RF DEVICE DATA + j50 90° VCE = 15 V IC = 90 mA + j25 120° + j100 S21 + j150 150° + j10 0 50 0.6 f = 0.1 GHz – j10 100 0.4 0.2 0.8 1 150 180° 250 500 0.8 1 0.4 0.6 0.6 0.4 1 f = 0.1 GHz + j500 25 30° 0.2 + j250 1 S11 0.8 10 0.6 0.4 0.2 60° f = 0.1 GHz 25 20 15 10 5 0.1 0.2 S12 0.3 0.4 0° 0.5 – j500 f = 0.1 GHz – j250 – 30° –150° – j150 S22 – 60° –120° – j100 – j25 – 90° – j50 Figure 13. Input/Output Reflection Coefficient versus Frequency (GHz) Figure 14. Forward/Reverse Transmission Coefficients versus Frequency (GHz) S11 S21 S12 VCE (Volts) IC (mA) f (MHz) 5.0 30 100 200 400 600 800 1000 |S11| 0.56 0.58 0.60 0.64 0.67 0.70 – 131 – 159 – 178 170 162 155 |S21| 16.45 9.42 5.00 3.61 2.92 2.55 113 98 86 76 67 58 |S12| 0.04 0.06 0.08 0.11 0.14 0.17 60 100 200 400 600 800 1000 0.53 0.56 0.59 0.63 0.66 0.69 – 141 – 164 178 169 161 155 17.89 10.05 5.31 3.82 3.09 2.67 110 97 85 76 67 58 90 100 200 400 600 800 1000 0.52 0.56 0.59 0.63 0.66 0.69 – 145 – 166 177 168 161 155 18.26 10.20 5.38 3.86 3.12 2.70 30 100 200 400 600 800 1000 0.53 0.53 0.55 0.59 0.62 0.65 – 122 – 153 175 173 165 158 60 100 200 400 600 800 1000 0.49 0.51 0.53 0.58 0.60 0.63 90 100 200 400 600 800 1000 0.48 0.50 0.53 0.57 0.60 0.63 10 ± φ ± φ ± S22 φ ± φ 45 49 55 56 55 54 |S22| 0.49 0.38 0.35 0.38 0.41 0.44 – 91 – 116 – 132 – 138 – 144 – 152 0.04 0.05 0.09 0.12 0.15 0.18 50 55 60 59 57 55 0.47 0.39 0.38 0.40 0.44 0.47 – 102 – 126 – 141 – 146 – 153 – 160 109 96 85 76 67 58 0.04 0.05 0.09 0.12 0.15 0.19 52 57 62 60 58 55 0.47 0.39 0.39 0.41 0.45 0.48 – 106 – 130 – 144 – 149 – 155 – 162 18.36 10.63 5.71 4.16 3.37 2.95 115 100 87 78 68 59 0.04 0.05 0.08 0.10 0.13 0.15 48 51 57 58 57 55 0.50 0.36 0.33 0.35 0.39 0.42 – 75 – 96 – 112 – 119 – 127 – 136 – 132 – 158 – 178 171 164 157 20.19 11.54 6.12 4.43 3.58 3.12 112 99 87 78 68 60 0.03 0.05 0.08 0.11 0.14 0.16 51 57 61 60 59 57 0.46 0.35 0.33 0.36 0.40 0.44 – 85 – 107 – 123 – 129 – 136 – 144 – 135 – 160 – 179 171 164 157 20.82 11.77 6.22 4.50 3.64 3.18 111 98 86 78 68 60 0.03 0.05 0.08 0.11 0.14 0.17 53 59 63 62 59 57 0.45 0.34 0.33 0.36 0.41 0.44 – 88 – 111 – 126 – 131 – 139 – 147 (continued) Table 1. Common–Emitter S–Parameters MOTOROLA RF DEVICE DATA MRF587 5 VCE (Volts) IC (mA) f (MHz) 15 30 S11 100 200 400 600 800 1000 |S11| 0.49 0.52 0.48 0.52 0.53 0.53 60 100 200 400 600 800 1000 90 100 200 400 600 800 1000 S21 ± φ S12 ± φ – 112 – 145 – 164 – 174 177 168 |S21| 20.34 11.51 6.12 4.19 3.29 2.76 118 101 87 75 68 61 |S12| 0.04 0.05 0.09 0.12 0.16 0.20 0.45 0.49 0.45 0.50 0.51 0.51 – 122 – 150 – 166 – 175 177 168 22.14 12.24 6.45 4.42 3.47 2.91 115 99 86 75 68 62 0.44 0.48 0.44 0.50 0.51 0.51 – 127 – 152 – 167 – 176 176 168 22.76 12.44 6.55 4.47 3.51 2.95 114 98 85 75 69 62 S22 ± φ ± φ 54 56 63 62 61 56 |S22| 0.51 0.36 0.32 0.32 0.38 0.47 – 52 – 77 – 74 – 90 – 90 – 90 0.03 0.05 0.09 0.13 0.16 0.20 56 60 65 63 61 55 0.45 0.33 0.30 0.32 0.38 0.46 – 60 – 86 – 83 – 99 – 98 – 96 0.03 0.05 0.09 0.13 0.17 0.20 58 62 66 64 61 55 0.43 0.32 0.29 0.32 0.38 0.46 – 62 – 89 – 85 – 102 – 100 – 98 Table 1. Common–Emitter S–Parameters (continued) RFC1 R1 Y3 + C5 VBB VCC Y4 C8 C7 TL3 3.68 cm C9 DUT TL1 Y1 C6 TL4 C3 RF INPUT + C4 TL2 C1 C2 Y2 RF OUTPUT 3.12 cm C10 C1, C2 — 470 pF Chip (Ceramic) C3, C4 — 0.018 µF Chip Capacitor C5, C6 — 0.1 µF Mylar C7, C8 — 1.0 µF, 25 Vdc Electrolytic C9 — 91 pF Mini–Unelco (C9 Taped 3.68 cm from C9 — Collector Connection on TL4 as shown) C10 — 35 – 45 pF Johanson Ceramic Capacitor, JMC C10 — 5801 or Equivalent (C10 Taped 3.12 cm from C10 — Base Connection on TL1) R1 — 2.7 kΩ, 1–1/2 W RFC1 — 0.15 µH Molded Choke TL1, TL2 — Zo = 26 Ω, 0.0625 TFG as shown in TL1, TL2 Photomaster TL3, TL4 — λ/4 Microstrip, Zo = 100 Ω Y1, Y2 — N–Type Connection (Female) Y3, Y4 — BNC–Type Connector (Female) Board Material — 0.0625″ Thick Glass Teflon εr = 2.5 Figure 15. Narrowband Test Fixture Schematic 500 MHz MRF587 6 MOTOROLA RF DEVICE DATA VBB VCC C4 C5 VCC = 15 V Pg = 11 dB f = 5 – 375 MHz Zo = 75 Ω R2 RF OUTPUT T2 C3 R3 C6 DUT C7 T1 RF INPUT L1 C2 C1 R1 C1, C7 — 0.5 – 10 pF C2, C6 — 0.001 µF C3 — 0.01 µF C4, C5 — 0.01 µF Feedthru C8 — 12 pF C8 R1 — 12 Ω 1.0 W (2.0 – 24 Ω on each emitter port) R2 — 1.8 k 1/8 W R3 — 2.2 k 1/8 W L1 — 1 Turn 0.012 dia #22 AWG T1(1) — 5 Turns Tapped at 2 Turns, #30 AWG T2(1) — 8 Turns Tapped at 3 Turns, #30 AWG (1) Ferroxcube 135 CT050 3D3 Material Figure 16. Broadband Test Circuit Schematic PRef PRef DISTORTION DISTORTION f1 f2 – f1 f1 f2 f3 f1 + f2 Figure 17. Second Order Distortion Test DISTORTION f2 UNMODULATED CARRIER PRef Figure 18. Triple Beat Distortion Test VRef – 6 dB 100% MODULATION 15 kHz 199 MHz – 60 dB 211 MHz f1 f2 217 MHz f3 193 MHz 205 MHz Figure 19. Cross Modulation Distortion Test MOTOROLA RF DEVICE DATA Figure 20. DIN 45004B Intermodulation Test MRF587 7 PACKAGE DIMENSIONS D 2 4 1 DIM A B C D E F J K M P S T U 3 K M T A J S F SEATING PLANE P C MILLIMETERS MIN MAX 7.06 7.26 6.20 6.50 15.24 16.51 0.66 0.86 1.40 1.65 1.52 — 0.10 0.15 11.17 — 45° NOM — 1.27 2.74 3.35 1.40 1.78 2.92 3.68 INCHES MIN MAX 0.278 0.286 0.244 0.256 0.600 0.650 0.026 0.034 0.055 0.065 0.060 — 0.004 0.006 0.440 — 45° NOM — 0.050 0.108 0.132 0.055 0.070 0.115 0.145 8–32 NC 2A WRENCH FLAT E B STYLE 1: PIN 1. 2. 3. 4. U EMITTER BASE EMITTER COLLECTOR CASE 244A–01 ISSUE A Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF587 8 ◊ *MRF587/D* MRF587/D MOTOROLA RF DEVICE DATA