Order this document by MRF899/D SEMICONDUCTOR TECHNICAL DATA The RF Line Designed for 26 Volt UHF large–signal, common emitter, Class AB linear amplifier applications in industrial and commercial FM / AM equipment operating in the range 800 – 960 MHz. • Specified 26 Volt, 900 MHz Characteristics Output Power = 150 Watts (PEP) Minimum Gain = 8.0 dB @ 900 MHz, Class AB Minimum Efficiency = 35% @ 900 MHz, 150 Watts (PEP) Maximum Intermodulation Distortion – 28 dBc @ 150 Watts (PEP) 150 W, 900 MHz RF POWER TRANSISTOR NPN SILICON • Characterized with Series Equivalent Large–Signal Parameters from 800 to 960 MHz • Silicon Nitride Passivated • 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 26 Vdc, and Rated Output Power • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. CASE 375A–01, STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Symbol Value Unit VCEO 28 Vdc Collector–Emitter Voltage VCES 60 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector–Current — Continuous IC 25 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 230 1.33 Watts W/°C Storage Temperature Range Tstg – 65 to + 150 °C Symbol Max Unit RθJC 0.75 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit V(BR)CEO 28 37 — Vdc OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 100 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) V(BR)CES 60 85 — Vdc Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 4.0 4.9 — Vdc ICES — — 10 mAdc hFE 30 75 120 — Cob — 75 — Collector Cutoff Current (VCE = 30 Vdc, VBE = 0) ON CHARACTERISTICS DC Current Gain (ICE = 1.0 Adc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 26 Vdc, IE = 0, f = 1.0 MHz) (1) (1) For information only. This part is collector matched. pF (continued) REV 7 RF DEVICE DATA MOTOROLA Motorola, Inc. 1997 MRF899 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Common–Emitter Amplifier Power Gain VCC = 26 Vdc, Pout = 150 Watts (PEP), Icq = 300 mA, f1 = 900 MHz, f2 = 900.1 MHz Gpe 8.0 9.0 — dB Collector Efficiency VCC = 26 Vdc, Pout = 150 Watts (PEP), Icq = 300 mA, f1 = 900 MHz, f2 = 900.1 MHz η 30 40 — % 3rd Order Intermodulation Distortion VCC = 26 Vdc, Pout = 150 Watts (PEP), Icq = 300 mA, f1 = 900 MHz, f2 = 900.1 MHz IMD — – 32 –28 dBc Output Mismatch Stress VCC = 26 Vdc, Pout = 150 Watts (PEP), Icq = 300 mA, f1 = 900 MHz, f2 = 900.1 MHz, VSWR = 5:1 (all phase angles) ψ FUNCTIONAL CHARACTERISTICS No Degradation in Output Power Before and After Test VB VCC R1b VBB C5 COAX 1 R2 C3 TL1 C7 C10 C12 L4 R3 C14 C17 L6 C22 C20 BALUN 2 TL7 B1 TL5 L7 L2 C24 C1 TL3 OUTPUT INPUT C9 C2 C16 C19 TL4 D.U.T. L3 C25 TL6 L9 TL2 L1 B2 TL8 BALUN 1 + R4 L5 R3 C4 R1a C6 VBB + C21 + C13 C15 C23 COAX 2 C18 Q1 + C26 C8 C27 + C11 L8 VB VCC B1, B2 — Ferrite Bead, Ferroxcube #56–590–65–3B C1, C2, C24, C25 — 43 pF, B Case, ATC Chip Capacitor C3, C4, C20, C21 — 100 pF, B Case, ATC Chip Capacitor C5, C6, C12, C13 — 1000 pF, B Case, ATC Chip Capacitor C7, C8, C14, C15 — 1800 pF, AVX Chip Capacitor C9 — 9.1 pF, A Case, ATC Chip Capacitor C10, C11, C17, C18, C22, C23 — 10 µF, Electrolytic Capacitor Panasonic C16 — 3.9 pF, B Case, ATC Chip Capacitor C19 — 0.8 pF, B Case, ATC Chip Capacitor C26 — 200 µF, Electrolytic Capacitor Mallory Sprague C27 — 500 µF Electrolytic Capacitor L1 — 5 Turns 24 AWG IDIA 0.059″ Choke, 19.8 nH L2, L3, L7, L9 — 4 Turns 20 AWG IDIA 0.163″ Choke L4, L5, L6, L8 — 12 Turns 22 AWG IDIA 0.140″ Choke N1, N2 — Type N Flange Mount, Omni Spectra Q1 — Bias Transistor BD136 PNP R2, R3, R4, R5 — 4.0 x 39 Ohm 1/8 W Chips in Parallel R1a, R1b — 56 Ohm 1.0 W TL1 – TL8 — See Photomaster Balun1, Balun2, Coax 1, Coax 2 — 2.20″ 50 Ohm 0.088″ o.d. Balun1, Balun2, Coax 1, Coax 2 — Semi–rigid Coax, Micro Coax Board — 1/32″ Glass Teflon, εr = 2.55″ Arlon (GX–0300–55–22) Figure 1. 900 MHz Power Gain Test Circuit MRF899 2 MOTOROLA RF DEVICE DATA 200 f = 800 MHz 900 MHz 960 MHz 100 75 50 VCC = 26 Vdc Icq = 300 mA 25 0 0 5 10 15 20 Pin, INPUT POWER (WATTS) 25 24 W 150 18 W 125 12 W 100 75 6W 50 VCC = 26 Vdc Icq = 300 mA 25 0 30 800 200 Pin = 24 W Pout , OUTPUT POWER (WATTS) 175 150 16 W 125 100 8W 75 50 f = 900 MHz Icq = 300 mA 25 0 14 16 18 20 22 24 26 VCC, COLLECTOR VOLTAGE (VOLTS) 28 9 300 mA 7 f = 900 MHz VCC = 26 V Icq = 300 mA 6 0.1 1 10 Pout, OUTPUT POWER (WATTS) 100 Figure 6. Power Gain versus Output Power MOTOROLA RF DEVICE DATA G pe, POWER GAIN (dB) G pe, POWER GAIN (dB) 9 600 mA 5 940 960 3rd Order – 30 5th – 40 7th – 50 f1 = 900 MHz f2 = 900.1 MHz VCC = 26 Vdc Icq = 300 mA – 60 0 25 50 75 100 125 Pout, OUTPUT POWER, WATTS (PEP) 150 175 Figure 5. Intermodulation versus Output Power 900 mA 8 920 10 Icq = 1200 mA 10 860 880 900 f, FREQUENCY (MHz) – 20 – 70 30 Figure 4. Output Power versus Supply Voltage 11 840 Figure 3. Output Power versus Frequency IMD, INTERMODULATION DISTORTION (dBc) Figure 2. Output Power versus Input Power 820 8 50 45 GPE ηC 40 7 35 6 30 PO = 150 W (PEP) VCC 26 V I/P VSWR lcq = 300 mA 5 840 850 860 870 880 890 f, FREQUENCY (MHz) 25 900 η c , EFFICIENCY (%) 125 Pin = 30 W 175 1.50 2.00 INPUT VSWR 150 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 175 1.00 200 Figure 7. Broadband Test Fixture Performance MRF899 3 f = 800 MHz 850 900 Zin 900 f = 960 MHz 850 960 ZOL* 800 Zo = 10 Ω f MHz Zin Ohms ZOL* Ohms 800 5.51 + j10.6 4.52 + j2.64 850 8.17 + j13.2 4.21 + j2.98 900 11.2 + j13.8 3.68 + j2.97 960 16.8 + j10.1 2.98 + j2.71 NOTE: Zin & ZOL* are given from NOTE: base–to–base and NOTE: collector–to–collector NOTE: respectively ZOL* = Conjugate of optimum load impedance into ZOL* = which the device operates at a given output ZOL* = power, voltage and frequency. Figure 8. Input and Output Impedances with Circuit Tuned for Maximum Gain @ PO = 150 W (PEP), VCC = 26 V MRF899 4 MOTOROLA RF DEVICE DATA C27 C26 C12 C14 C17 C10 C5 L6 C7 L4 C20 Q1 C3 COAX 1 C22 B2 L7 L2 C16 C1 C9 C2 L1 R4 BALUN 2 R2 L3 B1 C19 C24 C25 L9 C4 C23 C21 R3 BALUN 1 L5 COAX 2 R5 L8 C11 C6 C8 C18 C13 C15 Figure 9. MRF899 Test Fixture Component Layout MOTOROLA RF DEVICE DATA MRF899 5 PACKAGE DIMENSIONS Q 2 PL G L 0.25 (0.010) 1 T B 2 5 3 4 D E N F H –T– A M DIM A B C D E F G H K L N Q R –B– R K M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE C INCHES MIN MAX 1.330 1.350 0.375 0.395 0.180 0.205 0.320 0.340 0.060 0.070 0.004 0.006 1.100 BSC 0.082 0.097 0.580 0.620 0.435 BSC 0.845 0.875 0.118 0.130 0.390 0.410 STYLE 1: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 33.79 34.29 9.52 10.03 4.57 5.21 8.13 8.64 1.52 1.77 0.11 0.15 27.94 BSC 2.08 2.46 14.73 15.75 11.05 BSC 21.46 22.23 3.00 3.30 9.91 10.41 COLLECTOR COLLECTOR BASE BASE EMITTER CASE 375A–01 ISSUE O Motorola reserves the right to make changes without further notice to any products herein. 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Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Mfax: [email protected] – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://motorola.com/sps MRF899 6 ◊ MRF899/D MOTOROLA RF DEVICE DATA