FREESCALE MRF6S21100NBR1

Freescale Semiconductor
Technical Data
Document Number: MRF6S21100N
Rev. 3, 12/2008
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S21100NR1
MRF6S21100NBR1
Designed for W-CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN- PCS/cellular radio, WLL and
TD-SCDMA applications.
• Typical 2-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1050 mA,
Pout = 23 Watts Avg., f = 2157.5 MHz, Channel Bandwidth = 3.84 MHz,
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 14.5 dB
Drain Efficiency — 25.5%
IM3 @ 10 MHz Offset — -37 dBc in 3.84 MHz Bandwidth
ACPR @ 5 MHz Offset — -40 dBc in 3.84 MHz Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
• 225°C Capable Plastic Package
• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
2110-2170 MHz, 23 W AVG., 28 V
2 x W-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 1486-03, STYLE 1
TO-270 WB-4
PLASTIC
MRF6S21100NR1
CASE 1484-04, STYLE 1
TO-272 WB-4
PLASTIC
MRF6S21100NBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +68
Vdc
Gate-Source Voltage
VGS
-0.5, +12
Vdc
Storage Temperature Range
Tstg
-65 to +150
°C
TC
150
°C
TJ
225
°C
Symbol
Value (2,3)
Unit
Case Operating Temperature
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 73°C, 23 W CW
°C/W
RθJC
0.57
0.66
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2005-2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S21100NR1 MRF6S21100NBR1
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1B (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22-A113, IPC/JEDEC J-STD-020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 330 μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1050 mAdc)
VGS(Q)
—
2.8
—
Vdc
Fixture Gate Quiescent Voltage (1)
(VDD = 28 Vdc, ID = 1050 mAdc, Measured in Functional Test)
VGG(Q)
2.2
3.1
4.4
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 3.3 Adc)
VDS(on)
—
0.24
—
Vdc
Crss
—
1.5
—
pF
Off Characteristics
On Characteristics
Dynamic Characteristics (2)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1050 mA, Pout = 23 W Avg., f1 = 2112.5 MHz, f2 =
2157.5 MHz, 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz
Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
13
14.5
16
dB
Drain Efficiency
ηD
24
25.5
36
%
Intermodulation Distortion
IM3
-47
-37
-35
dBc
ACPR
-50
-40
-38
dBc
IRL
—
-12
-10
dB
Adjacent Channel Power Ratio
Input Return Loss
1. VGG = 11/10 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part is internally matched both on input and output.
MRF6S21100NR1 MRF6S21100NBR1
2
RF Device Data
Freescale Semiconductor
R1
B1
VBIAS
VSUPPLY
+
C1
R2
C2
C3
R3
C4
Z5
C5
C6
Z12
RF
INPUT
Z6
Z1
Z2
Z3
Z7
Z8
Z9
Z4
Z10
RF
OUTPUT
C9
Z11
C7
C8
DUT
VSUPPLY
C10
Z1, Z10
Z2
Z3
Z4
Z5
Z6
0.743″ x 0.084″ Microstrip
0.893″ x 0.084″ Microstrip
0.175″ x 0.084″ Microstrip
0.420″ x 0.800″ Microstrip
1.231″ x 0.040″ Microstrip
0.100″ x 0.880″ Microstrip
Z7
Z8
Z9
Z11, Z12
PCB
C11
C12
0.259″ x 0.880″ Microstrip
0.215″ x 0.230″ Microstrip
0.787″ x 0.084″ Microstrip
1.171″ x 0.120″ Microstrip
Arlon CuClad 250GX-0300-55-22, 0.030″, εr = 2.5
Figure 1. MRF6S21100NR1(NBR1) Test Circuit Schematic
Table 6. MRF6S21100NR1(NBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Ferrite Bead
25008051107Y0
Fair-Rite
C1
10 μF, 35 V Tantalum Capacitor
T491D106K035AT
Kemet
C2
0.01 μF Chip Capacitor
C1825C103J1GAC
Kemet
C3, C4, C10
5.1 pF Chip Capacitors
ATC100B5R1BT500XT
ATC
C5, C6, C11, C12
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C7
10 pF Chip Capacitor
ATC100B100BT500XT
ATC
C8
1.1 pF Chip Capacitor
ATC100B1R1BT500XT
ATC
C9
5.1 pF Chip Capacitor (MRF6S21100NR1)
8.2 pF Chip Capacitor (MRF6S21100NBR1)
ATC100B5R1BT500XT
ATC100B8R2BT500XT
ATC
ATC
R1
1 kΩ, 1/4 W Chip Resistor
CRCW12061001FKEA
Vishay
R2
10 kΩ, 1/4 W Chip Resistor
CRCW12061002FKEA
Vishay
R3
10 Ω, 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
MRF6S21100NR1 MRF6S21100NBR1
RF Device Data
Freescale Semiconductor
3
C3
B1 R3
C4
R1
R2
C2
C5
C7
C8
CUT OUT AREA
C1
C6
C9
C11 C12
MRF6S21100N/NB, Rev. 3
C10
Figure 2. MRF6S21100NR1(NBR1) Test Circuit Component Layout
MRF6S21100NR1 MRF6S21100NBR1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
ηD
26
25
24
14.2
Gps
14
-31
13.8
-34
IM3
-37
13.6
ACPR
13.4
-40
13.2
-43
13
2060 2080
IRL
2100
2120
2140
2160
2180
2200
-9
-10
-1 1
-12
-13
-46
2220 2240
-14
IRL, INPUT RETURN LOSS (dB)
14.4
27
IM3 (dBc), ACPR (dBc)
Gps, POWER GAIN (dB)
14.6
28
VDD = 28 Vdc, Pout = 22.5 W (Avg.), IDQ = 1050 mA
2-Carrier W-CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
14.8
ηD, DRAIN
EFFICIENCY (%)
15
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance @ Pout = 22.5 Watts Avg.
38
36
Gps, POWER GAIN (dB)
13.6
35
VDD = 28 Vdc, Pout = 45 W (Avg.), IDQ = 1050 mA
2-Carrier W-CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
Gps
13.2
13
IM3
34
-24
-26
-28
12.8
12.6
-30
ACPR
12.4
-32
12.2
2060 2080
IRL
2100
2120
2140
2160
2180
2200
-9
-10
-1 1
-12
-13
-34
2220 2240
-14
IRL, INPUT RETURN LOSS (dB)
37
ηD
13.8
13.4
ηD, DRAIN
EFFICIENCY (%)
14
IM3 (dBc), ACPR (dBc)
14.2
f, FREQUENCY (MHz)
Figure 4. 2-Carrier W-CDMA Broadband Performance @ Pout = 45 Watts Avg.
16
-1 0
1312 mA
15
Gps, POWER GAIN (dB)
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
IDQ = 1575 mA
1050 mA
14
787 mA
13
12
11
10
525 mA
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two-Tone Measurements, 10 MHz Tone Spacing
0.1
1
10
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two-Tone Measurements, 10 MHz Tone Spacing
-2 0
1575 mA
-3 0
IDQ = 525 mA
-4 0
1312 mA
-5 0
1050 mA
787 mA
-60
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two-T one Power Gain versus
Output Power
300
0.1
1
10
100
300
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S21100NR1 MRF6S21100NBR1
RF Device Data
Freescale Semiconductor
5
0
58
Ideal
VDD = 28 Vdc, Pout = 100 W (PEP)
IDQ = 1050 mA, Two-Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
-1 0
Pout , OUTPUT POWER (dBm)
-2 0
3rd Order
-3 0
-4 0
5th Order
-5 0
56
P3dB = 51.9 dBm (156.3 W)
54
P1dB = 51.3 dBm (135.8 W)
Actual
52
VDD = 28 Vdc, IDQ = 1050 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2140 MHz
50
7th Order
-60
48
0.1
1
10
100
300
32
34
36
TWO-T ONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
38
35
30
25
20
TC = 25_C
-40
IM3
Gps
15
-45
-30 _C
10
46
-55
0
0.5
44
-50
85_C
25_C
5
42
Figure 8. Pulsed CW Output Power versus
Input Power
-20
VDD = 28 Vdc, IDQ = 1050 mA, f1 = 2135 MHz -30 _C
25_C
-25
f2 = 2145 MHz, 2-Carrier W-CDMA
ηD
10 MHz Carrier Spacing, 3.84 MHz
25_C
Channel Bandwidth, PAR = 8.5 dB
-30 _C -30
@ 0.01% Probability (CCDF)
85_C
-35
ACPR
40
40
Pin, INPUT POWER (dBm)
1
IM3 (dBc), ACPR (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
-60
100
10
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. 2-Carrier W-CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
Gps, POWER GAIN (dB)
17
-30 _C
25_C
16
Gps
TC = -30_C
85_C
15
70
15
60
14
50
40
25_C
14
30
85_C
Gps, POWER GAIN (dB)
VDD = 28 Vdc
IDQ = 1050 mA
f = 2140 MHz
ηD, DRAIN EFFICIENCY (%)
18
13
12
32 V
13
20
12
10
10
0
9
ηD
11
0.1
1
10
100
300
28 V
11
VDD = 24 V
IDQ = 1050 mA
f = 2140 MHz
0
20
40
60
80
100
120
140
160
180 200
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
Figure 11. Power Gain versus Output Power
MRF6S21100NR1 MRF6S21100NBR1
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
MTTF (HOURS)
108
107
106
105
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 23 W Avg., and ηD = 25.5%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 12. MTTF versus Junction Temperature
W-CDMA TEST SIGNAL
100
+20
3.84 MHz
Channel BW
+30
0
-10
1
(dB)
PROBABILITY (%)
10
0.1
-20
-30
-40
0.01
W-CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
0.001
-50
0.0001
0
2
4
6
-70
-ACPR in
3.84 MHz BW
-IM3 in
3.84 MHz BW
-80
-25
-2 0
-60
8
10
PEAK-T O-A VERAGE (dB)
Figure 13. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single-Carrier Test Signal
-15
-10
-5
+ACPR in
3.84 MHz BW
0
5
10
+IM3 in
3.84 MHz BW
15
20
25
f, FREQUENCY (MHz)
Figure 14. 2‐Carrier W‐CDMA Spectrum
MRF6S21100NR1 MRF6S21100NBR1
RF Device Data
Freescale Semiconductor
7
Zo = 5 Ω
Zo = 5 Ω
f = 2110 MHz
Zsource
Zsource
f = 2170 MHz
Zload
f = 2170 MHz
f = 2170 MHz
f = 2170 MHz
Zload
f = 2110 MHz
f = 2110 MHz
f = 2110 MHz
MRF6S21100NR1
MRF6S21100NBR1
VDD = 28 Vdc, IDQ = 1050 mA, Pout = 23 W Avg.
VDD = 28 Vdc, IDQ = 1050 mA, Pout = 23 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
f
MHz
Zsource
Ω
Zload
Ω
2110
3.51 - j3.78
1.62 - j3.54
2110
3.56 - j3.92
1.62 - j3.47
2140
3.50 - j3.83
1.51 - j3.26
2140
3.55 - j3.97
1.53 - j3.19
2170
3.29 - j3.78
1.41 - j2.95
2170
3.34 - j3.90
1.44 - j2.89
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Device
Under
Test
Input
Matching
Network
Z
source
Output
Matching
Network
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRF6S21100NR1 MRF6S21100NBR1
8
RF Device Data
Freescale Semiconductor
TD-SCDMA CHARACTERIZATION
R1
B1
VBIAS
VSUPPLY
+
C1
R2
C2
C3
R3
C4
Z4
C5
C6
Z11
RF
INPUT
Z5
Z1
Z2
Z6
Z7
Z8
Z3
Z9
RF
OUTPUT
C9
Z10
C7
C8
DUT
VSUPPLY
C10
Z1
Z2
Z3
Z4
Z5
Z6
1.250″ x 0.084″ Microstrip
0.930″ x 0.084″ Microstrip
0.470″ x 0.800″ Microstrip
0.090″ x 0.800″ Microstrip
1.500″ x 0.040″ Microstrip
0.160″ x 0.880″ Microstrip
Z7
Z8
Z9
Z10
Z11
PCB
C11
C12
0.320″ x 0.880″ Microstrip
0.370″ x 0.200″ Microstrip
0.650″ x 0.084″ Microstrip
1.230″ x 0.084″ Microstrip
0.870″ x 0.120″ Microstrip
Arlon CuClad 250GX-0300-55-22, 0.030″, εr = 2.55
Figure 16. MRF6S21100NR1(NBR1) Test Circuit Schematic
Table 7. MRF6S21100NR1(NBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Ferrite Bead
25008051107Y0
Fair-Rite
C1
10 μF, 35 V Tantalum Capacitor
T491D106K035AT
Kemet
C2
0.01 μF Chip Capacitor
C1825C103J1GAC
Kemet
C3, C4, C10
5.1 pF Chip Capacitors
ATC100B5R1BT500XT
ATC
C5, C6, C11, C12
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C7
10 pF Chip Capacitor
ATC100B100BT500XT
ATC
C8
1.1 pF Chip Capacitor
ATC100B1R1BT500XT
ATC
C9
8.2 pF Chip Capacitor
ATC100B8R2BT500XT
ATC
R1
1 kΩ, 1/4 W Chip Resistor
CRCW12061001FKEA
Vishay
R2
10 kΩ, 1/4 W Chip Resistor
CRCW12061002FKEA
Vishay
R3
10 Ω, 1/4 W Chip Resistor
CRCW120610R0FKEA
Vishay
MRF6S21100NR1 MRF6S21100NBR1
RF Device Data
Freescale Semiconductor
9
B1 R3
C3
C4
R1
R2
C2
C5
C7
C8
CUT OUT AREA
C1
C6
C9
C11 C12
MRF6S21100N/NB, Rev. 3
C10
Figure 17. MRF6S21100NR1(NBR1) Test Circuit Component Layout — TD-SCDMA
MRF6S21100NR1 MRF6S21100NBR1
10
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
-3 0
18
3-Carrier TD-SCDMA
VDD = 28 V, IDQ = 900 mA
f = 2017.5 MHz
ηD
15
ALT/ACPR (dBc)
Adj-L
-4 0
12
9
-4 5
Alt-L
6
-5 0
3
-5 5
ηD, DRAIN EFFICIENCY (%)
-3 5
Adj-U
Alt-U
-60
0
0
1
3
2
4
5
6
7
9
8
Pout, OUTPUT POWER (WATTS) AVG.
Figure 18. 3-Carrier TD-SCDMA ACPR, ALT and
Drain Efficiency versus Output Power
-3 0
18
ALT/ACPR (dBc)
-3 5
ηD
15
12
-4 0
Adj-U
Alt-L
Adj-L
-4 5
9
-5 0
6
-5 5
3
Alt-U
-60
ηD, DRAIN EFFICIENCY (%)
6-Carrier TD-SCDMA
VDD = 28 V, IDQ = 900 mA
f = 2017.5 MHz
0
0.5
1.5
2.5
3.5
4.5
5.5
6.5
7.5
Pout, OUTPUT POWER (WATTS) AVG.
Figure 19. 6-Carrier TD-SCDMA ACPR, ALT and
Drain Efficiency versus Output Power
TD-SCDMA TEST SIGNAL
-30
-30
1.28 MHz
Channel BW
-40
-50
-50
-60
-70
+ALT2 in
1.28 MHz BW
+3.2 MHz Offset
-AL T2 in
1.28 MHz BW
-3.2 MHz Offset
-80
(dBm)
(dBm)
VBW = 300 kHz
Sweep Time = 200 ms
RBW = 30 kHz
-60
-70
-90
-100
-100
-1 10
-AL T2 in
1.28 MHz BW
-3.2 MHz Offset
-80
-90
-120
1.28 MHz
Channel BW
-40
VBW = 300 kHz
Sweep Time = 200 ms
RBW = 30 kHz
+ALT2 in
1.28 MHz BW
+3.2 MHz Offset
-1 10
+ALT1 in
1.28 MHz BW
+1.6 MHz Offset
-AL T1 in
1.28 MHz BW
-1.6 MHz Offset
-130
-120
-130
Center 2.0175 GHz
1.5 MHz
Span 15 MHz
f, FREQUENCY (MHz)
Figure 20. 3-Carrier TD-SCDMA Spectrum
-AL T1 in
1.28 MHz BW
-1.6 MHz Offset
Center 2.0175 GHz
+ALT1 in
1.28 MHz BW
+1.6 MHz Offset
2.5 MHz
Span 25 MHz
f, FREQUENCY (MHz)
Figure 21. 6-Carrier TD-SCDMA Spectrum
MRF6S21100NR1 MRF6S21100NBR1
RF Device Data
Freescale Semiconductor
11
Zo = 10 Ω
f = 1950 MHz
f = 2070 MHz
Zload
f = 1950 MHz
f = 2070 MHz
Zsource
VDD = 28 Vdc, IDQ = 900 mA
f
MHz
Zsource
W
Zload
W
1950
1.43 - j4.56
3.61 - j4.19
1960
1.57 - j4.80
3.86 - j4.40
1970
1.72 - j5.12
4.18 - j4.62
1980
1.65 - j5.27
4.21 - j4.81
1990
1.48 - j4.98
3.91 - j4.59
2000
1.38 - j4.45
3.56 - j4.07
2010
1.35 - j4.01
3.31 - j3.62
2020
1.30 - j3.57
3.14 - j3.40
2030
1.21 - j3.62
2.99 - j3.31
2040
1.25 - j3.61
3.02 - j3.31
2050
1.34 - j3.76
3.19 - j3.44
2060
1.37 - j4.08
3.38 - j3.75
2070
1.24 - j4.24
3.33 - j3.99
Zsource = Device input impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 22. Series Equivalent Source and Load Impedance — TD-SCDMA
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PACKAGE DIMENSIONS
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PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
2
Jan. 2007
Description
• Added “TD-SCDMA” to data sheet description paragraph, p. 1
• Removed Total Device Dissipation from Max Ratings table as data was redundant (information already
provided in Thermal Characteristics table), p. 1
• Added VGG(Q) and removed Min and Max value for VGS(Q) in On Characteristics table to account for the
test fixture's resistor divider network, p. 2
• Removed Forward Transconductance from On Characteristics table as it no longer provided usable
information, p. 2
• Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part numbers,
p. 3
• Adjusted scale for Fig. 5, Two-T one Power Gain versus Output Power, to better match the device's
capabilities, p. 5
• Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 6
• Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed
operating characteristics and location of MTTF calculator for device, p. 7
• Added TD-SCDMA test circuit schematic, component designations and values, component layout, typical
characteristic curves, test signal and series impedance, p. 9-12
• Added Product Documentation and Revision History, p. 17
3
Dec. 2008
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13232, p. 1, 2
• Changed Storage Temperature Range in Max Ratings table from -65 to +175 to -65 to +150 for
standardization across products, p. 1
• Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related
“Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C
in Capable Plastic Package bullet, p. 1
• Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), On Characteristics table, p. 2
• Updated PCB information to show more specific material details, Figs. 1, 16, Test Circuit Schematic, p. 3,
9
• Updated Part Numbers in Tables 6, 7, Component Designations and Values, to latest RoHS compliant
part numbers, p. 3, 9
• Corrected Fig. 15, Series Equivalent Source and Load Impedance's Zsource and Zload copy to
single-ended, p. 8
• Replaced Case Outline 1486-03, Issue C, with 1486-03, Issue D, p. 13-15. Added pin numbers 1 through
4 on Sheet 1.
• Replaced Case Outline 1484-04, Issue D, with 1484-04, Issue E, p. 16-18. Added pin numbers 1 through
4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations.
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Document Number: MRF6S21100N
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