FREESCALE MW5IC970NBR1_10

Document Number: MW5IC970N
Rev. 3, 1/2010
Freescale Semiconductor
Technical Data
RF LDMOS Wideband 2-Stage
Power Amplifiers
MW5IC970NBR1
MW5IC970GNBR1
Designed for broadband commercial and industrial applications with
frequencies from 132 MHz to 960 MHz. The high gain and broadband
performance of these devices make them ideal for large- signal, common- source
amplifier applications in 28 volt base station equipment. These devices have a
2-stage design with off-chip matching for the input, interstage and output
networks to cover the desired frequency band.
• Typical Performance: 800 MHz, 28 Volts, IDQ1 = 80 mA,
IDQ2 = 650 mA, Pout = 70 Watts PEP
Power Gain — 30 dB
Drain Efficiency — 48%
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 850 MHz, 70 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Integrated Quiescent Current Temperature Compensation
with Enable/Disable Function
• On-Chip Current Mirror gm Reference FET for Self Biasing Application (1)
• Integrated ESD Protection
• 200°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
800-900 MHz, 70 W,28 V
RF LDMOS WIDEBAND
2-ST AGE POWER AMPLIFIERS
CASE 1329-09
TO-272 WB-16
PLASTIC
MW5IC970NBR1
CASE 1329A-04
TO-272 WB-16 GULL
PLASTIC
MW5IC970GNBR1
VRD2
Quiescent Current
Temperature Compensation (1)
VRG2/VGS2
VRG1/VGS1
RFin1
VD2/RFout2
VRD1
VD1/RFout1
VD1/RFout1
GND
VRD2
VRG2/VGS2
VRG1/VGS1
RFin1
1
2
3
4
5
16
15
GND
NC
GND
6
14
VD2/
RFout2
VRD1
VD1/RFout1
VD1/RFout1
RFin2
GND
7
8
9
10
11
13
12
NC
GND
(Top View)
RFin2
Note: Exposed backside flag is source
terminal for transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2006, 2008, 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MW5IC970NBR1 MW5IC970GNBR1
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain-Source Voltage
Rating
VDSS
-0.5, +65
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Storage Temperature Range
Tstg
-65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
°C/W
RθJC
Final Application
(Pout = 70 W CW)
Stage 1, 28 Vdc, IDQ = 80 mA
Stage 2, 28 Vdc, IDQ = 650 mA
5.2
0.8
EDGE Application
(Pout = 35 W CW)
Stage 1, 28 Vdc, IDQ = 80 mA
Stage 2, 28 Vdc, IDQ = 650 mA
5.3
0.8
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1A (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
3
260
°C
Per JESD22-A113, IPC/JEDEC J-STD-020
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28.5 Vdc, IDQ1 = 80 mA, IDQ2 = 650 mA, Pout = 70 W PEP,
f1 = 870.0 MHz, f2 = 870.1 MHz
Power Gain
Gps
26.5
30
34.5
dB
Drain Efficiency
ηD
40
48
—
%
Input Return Loss
IRL
—
-12
-10
dB
Intermodulation Distortion
IMD
—
-33
-28
dBc
Typical 800/900 MHz Performances (In Freescale 800/900 MHz Reference Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 80 mA, IDQ2 =
650 mA, 740-870 MHz, 870-960 MHz
Gain Flatness in 30 MHz Bandwidth @ Pout = 70 W CW
GF
—
2
—
dB
Gain Flatness in 30 MHz Instantaneous Bandwidth
@ Pout = 70 W CW
GF
—
0.2
—
dB
Delay
—
4.5
—
ns
ΔΦ
—
±15
—
°
Delay @ Pout = 70 W CW Including Output Matching
Part-to-Part Phase Variation @ Pout = 70 W CW
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
MW5IC970NBR1 MW5IC970GNBR1
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RF Device Data
Freescale Semiconductor
VBIAS
VD2
R6
F1
R4
R8
R5
R7
R3
R2
1
C18
C16
R1
C15
RF
INPUT
Z1
2
VG2R2
C17
VG1R1
Z2
Z3
3
C8
16
Quiescent Current
Temperature
Compensation
NC 15
4
Z6
5
C7
Z5
C2
6
C1
C9
Z7
C10
Z8
C12
Z9
RF
OUTPUT
14
C6
7
C13
C11
Z10
8
C5
C14
9
10
NC 13
11
12
Z11
Z4
C3
C4
F2
VD1
Z1
Z2
Z3
Z4
Z5
Z6
0.485″ x 0.066″ Microstrip
0.270″ x 0.040″ Microstrip
0.068″ x 0.020″ Microstrip
0.950″ x 0.040″ Microstrip
0.131″ x 0.233″ Microstrip
0.797″ x 0.050″ Microstrip
Z7
Z8
Z9
Z10
Z11
PCB
0.040″ x 0.233″ Microstrip
0.450″ x 0.120″ Microstrip
0.100″ x 0.066″ Microstrip
1.000″ x 0.040″ Microstrip
0.148″ x 0.040″ Microstrip
Rogers 4350B, 0.030″, εr = 3.5
Figure 3. MW5IC970NBR1(GNBR1) Test Circuit Schematic
Table 6. MW5IC970NBR1(GNBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C10, C11
3.9 pF Chip Capacitors
ATC600S3R9BT250T
ATC
C2
56 pF Chip Capacitor
ATC600S560JT250T
ATC
C3, C8, C14, C15, C17
39 pF Chip Capacitors
GRM40001C0G390J050BD
Murata
C4, C9
10 μF Chip Capacitors
ECJ4YF1H106Z
Panasonic
C5
24 pF Chip Capacitor
ATC600F240JT250T
ATC
C6, C7
15 pF Chip Capacitors
ATC600F150JT250T
ATC
C12
4.7 pF Chip Capacitor
ATC600F4R7BT250T
ATC
C13
0.4 pF Chip Capacitor
ATC600F0R4BT250T
ATC
C16, C18, C19, C20
0.015 μF Chip Capacitors
GRM400X7R153J050BD
Murata
F1
5A Surface Mount Fuse
1FT5A
Little Fuse
F2
1A Surface Mount Fuse
1FT1A
Little Fuse
R1, R7
681 Ω, 1/8 W Chip Resistors
CRCW08056810FKEA
Vishay
R2, R5
4.75 kΩ, 1/8 W Chip Resistors
CRCW08054751FKEA
Vishay
R3, R4, R8
1.21 kΩ, 1/8 W Chip Resistors
CRCW08051211FKEA
Vishay
R6
267 Ω, 1/8 W Chip Resistor
CRCW08052670FKEA
Vishay
MW5IC970NBR1 MW5IC970GNBR1
RF Device Data
Freescale Semiconductor
3
VD2
F1
VG2
C9
R6
VG1
C8
R8
R7
R4
R5
C18
C17
R3
R2
R1
C16
C15
C11
C13
C7
C10
C2
C6
C12
C1
C
C5
C14
C3
MW5IC970
VD1
C4
Rev. 1
F2
Figure 4. MW5IC970NBR1(GNBR1) Test Circuit Component Layout
MW5IC970NBR1 MW5IC970GNBR1
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RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
60
IMD, INTERMODULATION DISTORTION (dBc)
IRL, INPUT RETURN LOSS (dB)
PAE, POWER ADDED EFFICIENCY (%)
Gps, POWER GAIN (dB)
60
PAE
40
40
Gps
20
20
VDD = 28.5 Vdc, Pout = 35 W (Avg.)
IDQ1 = 80 mA, IDQ2 = 650 mA
100 kHz Tone Spacing
0
0
IRL
-2 0
-20
IMD
-40
800
820
840
860
880
900
920
-40
960
940
f, FREQUENCY (MHz)
Figure 5. Two-T one Wideband Performance
@ Pout = 35 Watts (Avg.)
-1 0
IMD, INTERMODULATION DISTORTION (dBc)
32
IDQ2 = 975 mA
812 mA
650 mA
30
488 mA
29
28
VDD = 28.5 Vdc, IDQ1 = 80 mA
f1 = 870 MHz, f2 = 870.1 MHz
Two-Tone Measurements
100 kHz Tone Spacing
325 mA
27
1
10
100
-2 0
-3 0
-4 0
-5 0
5th Order
7th Order
-6 0
-70
1
200
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
-2 0
34
VDD = 28.5 Vdc, Pout = 35 W (PEP)
IDQ1 = 80 mA, IDQ2 = 650 mA
Two-Tone Measurements
(f1 + f2)/2 = Center Frequency of 870 MHz
-3 0
32
Gps, POWER GAIN (dB)
-2 5
3rd Order
-3 5
5th Order
-4 0
-4 5
7th Order
-5 0
70
VDD = 28.5 Vdc, IDQ1 = 80 mA
IDQ2 = 650 mA, f = 870 MHz
28
-55
1
10
100
TWO-T ONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
200
-30 _C
25_C 60
85_C
50
-30 _C
Gps
30
TC = 25_C
40
85_C
26
30
24
20
PAE
22
0.1
300
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Two-T one Power Gain versus
Output Power
IMD, INTERMODULATION DISTORTION (dBc)
3rd Order
20
0.1
1
10
10
100
PAE, POWER ADDED EFFICIENCY (%)
Gps, POWER GAIN (dB)
31
VDD = 28.5 Vdc
IDQ1 = 80 mA, IDQ2 = 650 mA
f1 = 870 MHz, f2 = 870.1 MHz
Two-Tone Measurements
100 kHz Tone Spacing
0
1000
Pout, OUTPUT POWER (WATTS) CW
Figure 9. Power Gain and Power Added
Efficiency versus CW Output Power
MW5IC970NBR1 MW5IC970GNBR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
32
IDQ1 = 80 mA
IDQ2 = 650 mA
f = 870 MHz
Gps, POWER GAIN (dB)
31
30
29
16 V
28
24 V
VDD = 12 V
27
0
20
40
20 V
60
80
32 V
28.5 V
100
120
140
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain versus Output Power
MW5IC970NBR1 MW5IC970GNBR1
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RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MW5IC970NBR1 MW5IC970GNBR1
RF Device Data
Freescale Semiconductor
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Freescale Semiconductor
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Freescale Semiconductor
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Freescale Semiconductor
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RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
• AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages
• AN3789: Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
2
Apr. 2008
Description
• Document Number changed from MW5IC970NBR1 to MW5IC970N with the addition of the
MW5IC970GNBR1 part number. Revision history sequencing maintained from first release of data
sheet, p. 1
• Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 2
• Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part
numbers, p. 3
• Replaced Case Outline 1329-09, Issue L, with 1329-09, Issue M, p. 1, 7-9. Added pin numbers 1
through 17.
• Added Case Outline 1329A-04, Issue F, p. 1, 10-12
• Added Product Documentation and Revision History, p. 13
3
Jan. 2010
• Changed Storage Temperature Range in Max Ratings table from -65 to +200 to -65 to +150 for
standardization across products, p. 2
MW5IC970NBR1 MW5IC970GNBR1
RF Device Data
Freescale Semiconductor
13
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MW5IC970NBR1 MW5IC970GNBR1
Document Number: MW5IC970N
Rev. 3, 1/2010
14
RF Device Data
Freescale Semiconductor