Inchange Semiconductor Product Specification 2SC3895 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High speed ·High breakdown voltage ·High reliability APPLICATIONS ·Ultrahigh-definition CRT display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 7 A ICM Collector current-peak 16 A PC Collector dissipation Ta=25℃ 3.0 TC=25℃ 60 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC3895 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 VCEsat Collector-emitter saturation voltage IC=5A ;IB=1.2A 5.0 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1.2A 1.5 V ICBO Collector cut-off current VCB=800V ;IE=0 10 μA ICES Collector cut-off current VCE=1500V; RBE=0 1.0 mA IEBO Emitter cut-off current VEB=4V ;IC=0 1.0 mA hFE-1 DC current gain IC=1A ; VCE=5V 8 hFE-2 DC current gain IC=5A ; VCE=5V 4 800 UNIT V 8 Switching times tstg tf Storage time Fall time IC=4A ; VCC=200V IB1=0.8A; IB2=1.6A RL=50Ω 2 0.1 3.0 μs 0.2 μs Inchange Semiconductor Product Specification 2SC3895 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification 2SC3895 Silicon NPN Power Transistors 4