Inchange Semiconductor Product Specification 2SC3688 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High breakdown voltage ・High speed APPLICATIONS ・Ultrahigh-definition color display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol 体 导 半 固电 Absolute maximum ratings(Ta=25℃) SYMBOL VCBO INC EM S E G N A H PARAMETER R O T UC D N O IC CONDITIONS VALUE UNIT Collector-base voltage Open emitter 1500 V Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 10 A ICM Collector current-peak 25 A PC Collector power dissipation 150 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ VCEO TC=25℃ Inchange Semiconductor Product Specification 2SC3688 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0A VCEsat Collector-emitter saturation voltage IC=8A ; IB=2.0A 5.0 V VBEsat Base-emitter saturation voltage IC=8A ; IB=2.0A 1.5 V ICES Collector cut-off current VCE=1500V; RBE=0V 1.0 mA IEBO Emitter cut-off current VEB=4V; IC=0A 1.0 mA hFE DC current gain IC=1A ; VCE=5V tf 体 导 半 Storage time 固电 Fall time EM S E NG A H C IN 2 UNIT V 8 R O T UC D N O IC IC=6.0A IB1=1.2A;IB2=-2.4A VCC=200V MAX 800 Switching times ts TYP. 3.0 μs 0.2 μs Inchange Semiconductor Product Specification 2SC3688 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN D N O IC Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 R O T UC Inchange Semiconductor Product Specification 2SC3688 Silicon NPN Power Transistors 体 导 半 固电 EM S E NG A H C IN 4 D N O IC R O T UC