ISC 2SC3636

Inchange Semiconductor
Product Specification
2SC3636
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PN package
・High voltage ,high speed
・High reliability
APPLICATIONS
・Ultrahigh-definition CRT display horizontal
deflection output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
体
导
半
固电
Absolute maximum ratings(Ta=℃)
SYMBOL
VCBO
VCEO
VEBO
EM
S
E
NG
PARAMETER
A
H
C
IN
D
N
O
IC
R
O
T
UC
CONDITIONS
VALUE
UNIT
Collector-base voltage
Open emitter
900
V
Collector-emitter voltage
Open base
500
V
Emitter-base voltage
Open collector
7
V
IC
Collector current
7
A
ICM
Collector current-peak
14
A
PC
Collector power dissipation
80
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC3636
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ; IB=0
VCEsat
Collector-emitter saturation voltage
IC=4A ;IB=0.8A
2.0
V
VBEsat
Base-emitter saturation voltage
IC=4A ;IB=0.8A
1.5
V
ICBO
Collector cut-off current
VCB=500V; IE=0
10
μA
ICES
Collector cut-off current
VCE=900V; RBE=0
0.5
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
mA
hFE
DC current gain
IC=0.8A ; VCE=5V
Switching times
ts
tf
体
导
半
固电
CONDITIONS
Storage time
Fall time
INC
2
TYP.
MAX
500
UNIT
V
8
R
O
T
UC
D
N
O
IC
VCC=200V;IC=4A;
IB1=0.8A; IB2=-1.6A
EM
S
E
G
N
A
H
MIN
0.1
3.0
μs
0.2
μs
Inchange Semiconductor
Product Specification
2SC3636
Silicon NPN Power Transistors
PACKAGE OUTLINE
体
导
半
固电
EM
S
E
NG
A
H
C
IN
R
O
T
UC
D
N
O
IC
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
Inchange Semiconductor
Product Specification
2SC3636
Silicon NPN Power Transistors
体
导
半
固电
EM
S
E
NG
A
H
C
IN
4
D
N
O
IC
R
O
T
UC