Inchange Semiconductor Product Specification 2SC3636 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage ,high speed ・High reliability APPLICATIONS ・Ultrahigh-definition CRT display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol 体 导 半 固电 Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO EM S E NG PARAMETER A H C IN D N O IC R O T UC CONDITIONS VALUE UNIT Collector-base voltage Open emitter 900 V Collector-emitter voltage Open base 500 V Emitter-base voltage Open collector 7 V IC Collector current 7 A ICM Collector current-peak 14 A PC Collector power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC3636 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A 2.0 V VBEsat Base-emitter saturation voltage IC=4A ;IB=0.8A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 10 μA ICES Collector cut-off current VCE=900V; RBE=0 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE DC current gain IC=0.8A ; VCE=5V Switching times ts tf 体 导 半 固电 CONDITIONS Storage time Fall time INC 2 TYP. MAX 500 UNIT V 8 R O T UC D N O IC VCC=200V;IC=4A; IB1=0.8A; IB2=-1.6A EM S E G N A H MIN 0.1 3.0 μs 0.2 μs Inchange Semiconductor Product Specification 2SC3636 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 Inchange Semiconductor Product Specification 2SC3636 Silicon NPN Power Transistors 体 导 半 固电 EM S E NG A H C IN 4 D N O IC R O T UC