Inchange Semiconductor Product Specification 2SC5416 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・High breakdown voltage ・High reliability APPLICATIONS ・For inverter lighting applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1000 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 9 V IC Collector current 4 A ICM Collector current-peak 8 A PC Collector power dissipation Ta=25℃ 2 TC=25℃ 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC5416 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4 A 1.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.4 A 1.5 V ICBO Collector cut-off current VCB=450V; IE=0 10 μA ICES Collector cut-off current VCE=1000V; RBE=0 1.0 mA IEBO Emitter cut-off current VEB=9V; IC=0 1.0 mA hFE-1 DC current gain IC=0.1A ; VCE=5V 30 hFE-2 DC current gain IC=1.5A ; VCE=5V 10 450 UNIT V 50 Switching times ts Storage time 2.5 μs 0.15 μs IC=2A;IB1=0.4A ;IB2=-0.8A tf Fall time 2 Inchange Semiconductor Product Specification 2SC5416 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification 2SC5416 Silicon NPN Power Transistors 4