SEMICONDUCTOR TIP112F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. A C P E B High DC Current Gain. VCE=4V, IC=1A. G : hFE=1000(Min.), Low Collector-Emitter Saturation Voltage. K Complementary to TIP117F. L L R J D ) N CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V DC IC 2 Pulse ICP 4 Base Current DC IB 50 Collector Power Ta=25 Dissipation Tc=25 1 N 2 H 3 S 0.5 Typ 1. BASE Q MAXIMUM RATING (Ta=25 M N P Q R G H J K L M D MILLIMETERS _ 0.3 10.0 + _ 0.3 15.0 + _ 0.3 2.70 + 0.76+0.09/-0.05 _ 0.2 Φ3.2 + _ 0.3 3.0 + _ 0.3 12.0 + 0.5+0.1/-0.05 _ 0.5 13.6 + _ 0.2 3.7 + 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 0.1 2.54 + _ 0.1 6.8 + _ 0.2 4.5 + _ 0.2 2.6 + DIM A B C D E F F S FEATURES 2. COLLECTOR Collector Current 3. EMITTER A Junction Temperature Storage Temperature Range TO-220IS mA 2 PC W EQUIVALENT CIRCUIT 20 Tj 150 Tstg -65 150 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC C B R1 R2 = 10kΩ = 0.6kΩ E ) SYMBOL TEST CONDITION MIN. TYP. MAX. ICEO VCE=50V, IB=0 - - 2 ICBO VCB=100V, IE=0 - - 1 Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 2 VCE=4V, IC=1A 1000 - - DC Current Gain hFE VCE=4V, IC=2A 500 - - Collector Cut-off Current UNIT mA mA Collector-Emitter Sustaining Voltage VCEO(SUS) IC=30mA, IB=0 100 - - V Collector-Emitter Saturation Voltage VCE(sat) IC=2A, IB=8mA - - 2.5 V Base-Emitter On Voltage VBE(ON) VCE=4V, IC=2A - - 2.8 V VCB=10V, IE=0, f=0.1MHz - - 100 pF Collector Output Capacitance 2007. 5. 21 Revision No : 0 Cob 1/2 TIP112F COLLECTOR CURRENT I C (A) 2.0 C - V CE A µA µA 450µ 400 50µA 3 0 50 h FE - I C 100K VCE =4V A 300µ 1.6 DC CURRENT GAIN h FE I 250µA 1.2 200µA 0.8 I B =150µA 0.4 0 2 1 3 4 30K 10K 300 100 30 10 0.01 5 COLLECTOR-EMITTER VOLTAGE V CE (V) 0.1 I C /I B =500 CAPACITANCE C ob (pF) SATURATION VOLTAGE VBE(sat) ,V CE(sat) (V) C ob - V CB 30 10 3 V BE(sat) 1 VCE(sat) 0.3 0.1 0.01 0.1 1 10 COLLECTOR CURRENT I C (A) V BE(sat) , V CE(sat) - I C 100 1 1k 500 300 f=0.1MHz 100 50 30 10 5 3 1 0.01 10 COLLECTOR CURRENT I C (A) 1 0.1 10 100 COLLECTOR-BASE VOLTAGE VCB (V) SAFE OPERATING AREA P D - Ta 10 10 5 DC OPERATION Tc=25 C 1 0.5 SINGLE NONREPETITIVE PULSE Tc=25 C 0.3 CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 0 0 50 100 150 CASE TEMPERATURE Ta ( C) 200 s 15 I C MAX(PULSED) 3 s 20 5 1m COLLECTOR CURRENT I C (A) 25 5m POWER DISSIPATION P D (W) 30 0.1 1 3 5 10 30 50 100 COLLECTOR-EMITTER VOLTAGE V CE (V) 2007. 5. 21 Revision No : 0 2/2