SEMICONDUCTOR KTC2983D/L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES A High Transition Frequency : fT=100MHz(Typ.). I C J SYMBOL RATING UNIT Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 5 V Collector Current IC 1.5 A Base Current IB 1.0 A Dissipation Tc=25 Junction Temperature 1 L F 2 3 1. BASE 2. COLLECTOR 3. EMITTER W 10 Tj 150 Tstg -55 150 I A C J K Q B Storage Temperature Range P F MILLIMETERS _ 0.2 6.60 + _ 0.2 6.10 + _ 0.2 5.0 + _ 0.2 1.10 + _ 0.2 2.70 + _ 0.1 2.30 + 1.00 MAX _ 0.2 2.30 + _ 0.1 0.5 + _ 0.20 2.00 + _ 0.10 0.50 + _ 0.10 0.91+ _ 0.1 0.90 + _ 0.10 1.00 + 0.95 MAX DPAK 1.0 PC H DIM A B C D E F H I J K L M O P Q D Ta=25 M O ) CHARACTERISTIC Collector Power K MAXIMUM RATING (Ta=25 E Q B D Complementary to KTA1225D/L. P H E G F 1 F 2 L 3 DIM A B C D E F G H I J K L P Q MILLIMETERS _ 0.2 6.60 + _ 0.2 6.10 + _ 5.0 + 0.2 _ 0.2 1.10 + _ 0.6 9.50 + _ 0.1 2.30 + _ 0.1 0.76 + 1.0 MAX _ 0.2 2.30 + _ 0.1 0.5 + _ 2.0 + 0.2 _ 0.1 0.50 + _ 0.1 1.0 + 0.90 MAX 1. BASE 2. COLLECTOR 3. EMITTER ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC IPAK ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=160V, IE=0 - - 1.0 A Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 1.0 A Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 160 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=1mA, IC=0 5.0 - - V DC Current Gain hFE(Note) VCE=5V, IC=100mA 70 - 240 VCE(sat) IC=500mA, IB=50mA - - 1.5 V Base-Emitter Voltage VBE VCE=5V, IC=500mA - - 1.0 V Transition Frequency fT VCE=10V, IC=100mA - 100 - MHz VCB=10V, IE=0, f=1MHz - 25 - pF Collector-Emitter Saturation Voltage Collector Output Capacitance Cob Note : hFE Classification O:70~140, Y:120~240 2003. 3. 27 Revision No : 3 1/3 KTC2983D/L I C - VCE hFE - I C 6mA Tc=100 C 4mA 0.4 I B =2mA 0.2 0 Tc=25 C 100 Tc=-25 C 50 30 COMMON EMITTER VCE =5V 0mA 0 2 4 6 8 10 12 14 10 0.003 16 0.01 COLLECTOR-EMITTER VOLTAGE VCE (V) 0.03 C 100 Tc= 0.1 Tc=25 C Tc=-25 C 0.05 0.03 0.1 1 0.3 0.6 0.4 0.2 0 0.2 0.4 0.6 0.8 1.0 1.2 COLLECTOR CURRENT I C (A) BASE-EMITTER VOLTAGE VBE (V) f T - IC Pc - Ta 300 100 50 30 COMMON EMITTER VCE =10V Tc=25 C 0 0.005 0.01 0.8 0 3 COMMON EMITTER VCE =5V Tc=100 C 0.3 0.03 0.1 0.3 COLLECTOR CURRENT I C (A) 2003. 3. 27 COLLECTOR CURRENT I C (A) I C /I B =10 Revision No : 3 1 COLLECTOR POWER DISSIPAZTION PC (W) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) TRANSITION FREQUENCY f T (MHz) 1.0 COMMON EMITTER 0.01 3 I C - VBE 1 0.03 0.003 1 0.3 COLLECTOR CURRENT I C (A) V CE(sat) - I C 0.5 0.1 Tc=25 C Tc=-25 C 0.6 300 COMMON EMITTER Tc=25 C DC CURRENT GAIN h FE 0.8 A 8m A m 12 20 mA COLLECTOR CURRENT I C (A) 1.0 30 1.4 1 Tc=25 C 25 2 Ta=25 C 20 15 1 10 5 0 2 0 20 40 60 80 100 120 140 160 180 AMBIENT TEMPERATURE Ta ( C) 2/3 KTC2983D/L SAFE OPERATING AREA 5 I C MAX(PULSED) * I C MAX (CONTINUOUS) 1.5 1 DC OP Tc ER =2 AT 5 I C ON 0.5 0.3 0.1 s* 1m * ms 10 s* 0m 10 COLLECTOR CURRENT I C (A) 3 * SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. 0.05 0.02 5 10 30 50 100 300 COLLECTOR-EMITTER VOLTAGE VCE (V) 2003. 3. 27 Revision No : 3 3/3