Diodes SMD Type Silicon Schottky Barrier Diode HSM276SR SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 HSM276ASR which is interconnected in series configuration 0.55 High forward current, Low capacitance. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 is designed for balanced mixer use. +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 MPAK package is suitable for high density surface mounting and high speed assembly. 1.Base 2.Emitter 3.collector A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym bol V a lu e U n it R e v e rs e v o lta g e VR 3 V A v e ra g e re c tifie d c u rre n t mA IO * 30 J u n c tio n te m p e ra tu re Tj 125 S to ra g e te m p e ra tu re T s tg -5 5 to + 1 2 5 Electrical Characteristics Ta = 25 Parameter Symbol Conditions Min Reverse voltage VR V R =1.0 mA 3 Reverse current IR V R =0. 5 V Forward current IF V R =0. 5 V Capacitance C V R = 0.5V, f = 1 MHz 0.90 pF ÄC V R = 0.5V, f = 1 MHz 0.10 pF Capacitance deviation C=200pF, R= 0 ESD-Capability (Note 1) Both forward and Typ Max V 50 35 30 Unit A mA V reverse direction 1 pulse. (Note 1) Note 1. Failure criterion ; IR 100 A at V R =0.5 V Marking Marking C9 www.kexin.com.cn 1