PANASONIC MA729

Schottky Barrier Diodes (SBD)
MA2J729
Silicon epitaxial planar type
Unit : mm
For super-high speed switching circuit
For small current rectification
Symbol
Rating
Unit
VR
30
V
Reverse voltage (DC)
Repetitive peak reverse voltage
VRRM
30
V
IFM
300
mA
Average forward current
IF(AV)
200
mA
Non-repetitive peak forward
surge current*
IFSM
1
A
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Peak forward current
0.7 ± 0.1
+ 0.1
0.16 − 0.06
■ Absolute Maximum Ratings Ta = 25°C
Parameter
1
2
1.25 ± 0.1
• Sealed in the S-mini (2-pin) mold and super small type
• Allowing to rectify under (IF(AV) = 200 mA) condition
• Allowing high-density mounting
0.3
0.5 ± 0.1
■ Features
A
0.625
K
0.4 ± 0.1
1.7 ± 0.1
0.4 ± 0.1
2.5 ± 0.2
1 : Anode
2 : Cathode
S-Mini Type Package (2-pin)
Marking Symbol: 2B
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
50
µA
Reverse current (DC)
IR
VR = 30 V
Forward voltage (DC)
VF
IF = 200 mA
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
30
pF
Reverse recovery time*
trr
IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
3.0
ns
0.55
V
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 1 000 MHz
3. * : trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
1
MA2J729
Schottky Barrier Diodes (SBD)
IF  V F
IR  VR
VF  Ta
103
105
0.5
10
1
10−1
10−2
IF = 200 mA
0.3
100 mA
0.2
0.1
0.2
0.3
0.4
0.5
0
−40
0.6
Forward voltage VF (V)
40
80
120
160
200
IR  T a
104
30
25
20
15
10
15 V
5V
103
VR = 30 V
102
10
5
0
0
5
10
15
20
25
Reverse voltage VR (V)
2
30
1
−40
25°C
0
40
80
120
160
Ambient temperature Ta (°C)
0
5
10
15
20
25
Reverse voltage VR (V)
105
Reverse current IR (µA)
Terminal capacitance Ct (pF)
35
102
1
0
Ambient temperature Ta (°C)
f = 1 MHz
Ta = 25°C
100°C
10 mA
Ct  VR
40
103
10
0.1
0
Ta = 150°C
104
Reverse current IR (µA)
0.4
− 20°C
Forward voltage VF (V)
Forward current IF (mA)
100°C 25°C
102 T = 150°C
a
200
30