KEXIN HSC276

Diodes
SMD Type
Silicon Schottky Barrier Diode
HSC276
SOD-523
+0.05
0.3-0.05
Unit: mm
+0.1
1.2-0.1
+0.05
0.8-0.05
Features
High forward current, Low capacitance.
+
+0.1
0.6-0.1
-
Ultra small Flat Package (UFP) is suitable for surface mount design.
+0.1
1.6-0.1
+0.05
0.1-0.02
0.07max
0.77max
A b s o lu te M a x im u m R a tin g s T a = 2 5
P a ra m e te r
S ym bol
V a lu e
U n it
R e v e rs e V o lta g e
VR
3
V
A v e ra g e re c tifie d c u rre n t
IO
30
mA
J u n c tio n te m p e ra tu re
Tj
125
S to ra g e te m p e ra tu re
T s tg
-5 5 to + 1 2 5
Electrical Characteristics Ta = 25
Param eter
Sym bol
Conditions
M in
30
Reverse voltage
VR
I R = 10
Reverse current
IR
V R = 0.5 V
Forward voltage
IF
V R = 0.5 V
Capacitance
C
ESD-Capability (Note 1)
A
M ax
35
A
mA
0.85
30
Unit
V
0.5
V R = 0.5 V, f = 1 M Hz
C=200pF , Both forward and
Typ
pF
V
reverse direction 1 pulse.
Note
1. Failure criterion ; I R
100m A at VR =0.5 V
Marking
Marking
C2
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