Diodes SMD Type Silicon Schottky Barrier Diode HSC276 SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 +0.05 0.8-0.05 Features High forward current, Low capacitance. + +0.1 0.6-0.1 - Ultra small Flat Package (UFP) is suitable for surface mount design. +0.1 1.6-0.1 +0.05 0.1-0.02 0.07max 0.77max A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym bol V a lu e U n it R e v e rs e V o lta g e VR 3 V A v e ra g e re c tifie d c u rre n t IO 30 mA J u n c tio n te m p e ra tu re Tj 125 S to ra g e te m p e ra tu re T s tg -5 5 to + 1 2 5 Electrical Characteristics Ta = 25 Param eter Sym bol Conditions M in 30 Reverse voltage VR I R = 10 Reverse current IR V R = 0.5 V Forward voltage IF V R = 0.5 V Capacitance C ESD-Capability (Note 1) A M ax 35 A mA 0.85 30 Unit V 0.5 V R = 0.5 V, f = 1 M Hz C=200pF , Both forward and Typ pF V reverse direction 1 pulse. Note 1. Failure criterion ; I R 100m A at VR =0.5 V Marking Marking C2 www.kexin.com.cn 1