MITSUBISHI RA30H4552M1_11

< Silicon RF Power Modules >
RA30H4552M1
RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
BLOCK DIAGRAM
DESCRIPTION
The RA30H4552M1 is a 30-watt RF MOSFET Amplifier Module for
12.5-volt mobile radios that operate in the 450- to 520-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the drain
and the nominal output signal (Pout=30W) attenuates up to 60 dB.
The output power and the drain current increase as the gate
voltage increases. The output power and the drain current
increase substantially with the gate voltage around 0V(minimum).
The nominal output power becomes available at the state that VGG
is 4V (typical) and 5V (maximum).
At VGG=5V, the typical gate currents are 1mA.This module is
designed for non-linear FM modulation, but may also be used for
linear modulation by setting the drain quiescent current with the
gate voltage and controlling the output power with the input power
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
2
3
1
4
5
1
RF Input (Pin)
2
Gate Voltage (VGG), Power Control
3
Drain Voltage (VDD), Battery
4
RF Output (Pout)
5
RF Ground (Case)
• Pout>30W, T>42% @ VDD=12.5V, VGG=5V, Pin=50mW
PACKAGE CODE: H2M
• Broadband Frequency Range: 450-520MHz
• Metal shield structure that makes the improvements of spurious
radiation simple
• Low-Power Control Current IGG=1mA (typ) @ VGG=5V
• Module Size: 67 x 19.4 x 9.9 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output
power with the input power.
RoHS COMPLIANCE
• RA30H4552M1 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
SUPPLY FORM
RA30H4552M1-101
Antistatic tray,
10 modules/tray
Publication Date : Oct．2011
1
< Silicon RF Power Modules >
RA30H4552M1
RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
MAXIMUM RATINGS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
VDD
Drain Voltage
VGG<5V, Pin=0W
VGG
Gate Voltage
VDD<12.5V, Pin=50mW
Pin
Input Power
Pout
Output Power
Tcase(OP)
Tstg
RATING
UNIT
17
V
6
V
100
mW
45
W
Operation Case Temperature Range
-30 to +100
°C
Storage Temperature Range
-40 to +110
°C
f=450-520MHz,
VGG<5V
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
SYMBOL PARAMETER
F
CONDITIONS
Frequency Range
MIN
TYP
MAX
UNIT
450
-
520
MHz
Pout
Output Power
VDD=12.5V
30
-
-
W
T
Total Efficiency
VGG=5V
42
-
-
%
-
-
-40
dBc
-
-
3:1
—
nd
2fo
2
in
Input VSWR
Harmonic
Pin=50mW
IGG
Gate Current
VDD=0V, VGG=5V, Pin=0W
-
1
-
mA
IDD
Leakage Current
VDD=17V, VGG=0V, Pin=0W
-
-
1
mA
—
Stability
—
Load VSWR Tolerance
VDD=10.0-15.2V, Pin=25-70mW,
5<Pout <40W (VGG control), Load VSWR=3:1
VDD=15.2V, Pin=50mW,
Pout=30W (VGG control), Load VSWR=20:1
All parameters, conditions, ratings, and limits are subject to change without notice.
Publication Date : Oct．2011
2
No parasitic oscillation
—
No degradation or destroy
—
< Silicon RF Power Modules >
RA30H4552M1
RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
nd
OUTPUT POWER, TOTAL EFFICIENCY,
versus FREQUENCY
70
-30
60
hT
HARMONICS (dBc)
OUTPUT POWER P out (W)
TOTAL EFFICIENCY(%)
rd
2 , 3 HARMONICS versus FREQUENCY
50
Pout
40
30
VDD=12.5V
VGG=5V
Pin=50mW
20
VDD=12.5V
VGG=5V
Pin=50mW
-40
2nd
-50
-60
-70
3rd
-80
10
430 440 450 460 470 480 490 500 510 520 530
430 440 450 460 470 480 490 500 510 520 530
FREQUENCY f (MHz)
FREQUENCY f (MHz)
INPUT VSWR versus FREQUENCY
INPUT VSWR rin (-)
5
VDD=12.5V
VGG=5V
Pin=50mW
4
3
2
rin
1
430 440 450 460 470 480 490 500 510 520 530
FREQUENCY f (MHz)
40
16
12
Gp
20
8
IDD
10
4
0
-5
0
5
10
15
40
16
Gp
30
20
4
0
-10
Gp
12
8
IDD
10
4
0
OUTPUT POWER Pout (dBm)
POWER GAIN Gp (dB)
20
16
0
5
10
10
15
20
15
24
f=520MHz
VDD=12.5V
VGG=5V
50
Pout
20
40
16
30
12
Gp
20
8
IDD
10
4
0
0
-5
5
60
DRAIN CURRENT I DD (A)
OUTPUT POWER Pout (dBm)
POWER GAIN Gp (dB)
Pout
40
-10
0
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
24
20
-5
INPUT POWER P in (dBm)
60
30
8
10
20
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
12
IDD
INPUT POWER Pin (dBm)
f=490MHz
VDD=12.5V
VGG=5V
20
0
0
-10
50
Pout
0
-10
20
-5
0
5
10
INPUT POWER P in (dBm)
INPUT POWER Pin (dBm)
Publication Date : Oct．2011
3
15
20
DRAIN CURRENT I DD (A)
30
24
f=470MHz
VDD=12.5V
VGG=5V
DD (A)
20
60
OUTPUT POWER Pout (dBm)
POWER GAIN Gp (dB)
50
Pout
DD (A)
24
f=450MHz
VDD=12.5V
VGG=5V
DRAIN CURRENT I
OUTPUT POWER Pout (dBm)
POWER GAIN Gp (dB)
60
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
DRAIN CURRENT I
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
< Silicon RF Power Modules >
RA30H4552M1
RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
10
40
8
6
IDD
20
4
10
2
0
50
6
8
10
12
14
8
30
20
4
10
2
0
16
0
2
4
DRAIN VOLTAGE VDD (V)
10
Pout
8
30
6
IDD
20
4
10
2
0
4
6
8
10
12
14
8
4
10
2
0
2
4
6
4
10
2
0
OUTPUT POWER P out (W)
8
5
8
6
IDD
20
4
10
2
0
0
2
30
6
IDD
20
4
10
2
0
OUTPUT POWER P out (W)
8
5
6
12
f=520MHz
VDD=12.5V
Pin=50mW
50
10
Pout
40
8
30
6
IDD
20
4
10
2
0
5
4
60
DRAIN CURRENT I DD (A)
OUTPUT POWER P out (W)
10
Pout
4
3
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
12
3
10
Pout
GATE VOLTAGE VGG (V)
60
2
16
30
6
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
40
14
40
GATE VOLTAGE VGG (V)
50
12
12
f=470MHz
VDD=12.5V
Pin=50mW
50
0
f=490MHz
VDD=12.5V
Pin=50mW
10
60
DRAIN CURRENT I DD (A)
OUTPUT POWER P out (W)
10
Pout
4
8
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
20
3
6
DRAIN VOLTAGE VDD (V)
IDD
2
6
IDD
0
12
30
10
20
16
60
40
16
Pout
30
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
50
14
40
DRAIN VOLTAGE VDD (V)
f=450MHz
VDD=12.5V
Pin=50mW
12
12
f=520MHz
VGG=5V
Pin=50mW
50
0
2
10
60
OUTPUT POWER P out (W)
12
40
8
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
DRAIN CURRENT I DD (A)
OUTPUT POWER P out (W)
60
50
6
DRAIN VOLTAGE VDD (V)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
f=490MHz
VGG=5V
Pin=50mW
6
IDD
DRAIN CURRENT I DD (A)
4
10
40
0
2
Pout
DRAIN CURRENT I DD (A)
30
12
f=470MHz
VGG=5V
Pin=50mW
0
6
0
2
GATE VOLTAGE VGG (V)
3
4
5
GATE VOLTAGE VGG (V)
Publication Date : Oct．2011
4
6
DRAIN CURRENT I DD (A)
50
60
OUTPUT POWER P out (W)
12
Pout
f=450MHz
VGG=5V
Pin=50mW
DRAIN CURRENT I DD (A)
OUTPUT POWER P out (W)
60
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
DRAIN CURRENT I DD (A)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
< Silicon RF Power Modules >
RA30H4552M1
RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
OUTLINE
67±1
④
18±1
10.7±1
③
15±1
① ②
4±0.5
49.8±1
2-R2±0.5
19.4±1
(3.26)
60±1
12.5±1
0.6±0.2
17±1
44±1
（2.6）
（9.9）
3.1+0.6/-0.4
7.3±0.5
56±1
Publication Date : Oct．2011
5
1
RF Input (Pin )
2
Gate Voltage(VGG)
3
Drain Voltage (VDD)
4
RF Output (Pout)
5
RF Ground (Case)
< Silicon RF Power Modules >
RA30H4552M1
RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
TEST BLOCK DIAGRAM
Power
Meter
GG1
DUT
1
Signal
Generator
Attenuator
Preamplifier
2
3
4
Z L =50 Ω
Z G =50 Ω
Attenuator
Spectrum
Analyzer
5
Directional
Coupler
Directional
Coupler
C1
-
Attenuator
Power
Meter
C2
+
+
DC Power
Supply V
GG
-
DC Power
Supply V DD
C1, C2: 4700pF, 22uF in parallel
1
RF Input (Pin)
2
Gate Voltage (VGG)
3
Drain Voltage (VDD)
4
RF Output (Pout)
5
RF Ground (Case)
EQUIVALENT CIRCUIT
3
1
4
5
2
Publication Date : Oct．2011
6
< Silicon RF Power Modules >
RA30H4552M1
RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
RECOMMENDATIONS and APPLICATION INFORMATION:
Construction:
This module consists of a glass-epoxy substrate soldered onto a copper flange. For mechanical protection, a metal cap is
attached (which makes the improvement of RF radiation easy). The MOSFET transistor chips are die bonded onto
metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors,
and resistors form the bias and matching circuits. Wire leads soldered onto the glass-epoxy substrate provide the DC and
RF connection.
Following conditions must be avoided:
a) Bending forces on the glass-epoxy substrate (for example, by driving screws or from fast thermal changes)
b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion)
c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichloroethylene)
d) ESD, surge, overvoltage in combination with load VSWR, and oscillation
ESD:
This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.
Mounting:
A thermal compound between module and heat sink is recommended for low thermal contact resistance.
The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board.
M3 screws are recommended with a tightening torque of 4.0 to 6.0 kgf-cm.
Soldering and Defluxing:
This module is designed for manual soldering.
The leads must be soldered after the module is screwed onto the heat sink.
The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second.
Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles in
the coating of the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink:
At Pout=60W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are:
Pin
Pout
Rth(ch-case)
IDD @ T=42%
VDD
(W)
(W)
(°C/W)
(A)
(V)
st
1
0.05
2.5
2.24
1.5
12.5
nd
2
2.5
30.0
0.74
4.2
The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are:
Tch1 = Tcase + (12.5V x 1.5A – 2.5W + 0.05W) x 2.24°C/W = Tcase + 36.5 °C
Tch2 = Tcase + (12.5V x 4.2A – 30.0W + 2.5W) x 0.74°C/W = Tcase + 18.5 °C
Stage
For long-term reliability, it is best to keep the module case temperature (Tcase) below 90°C. For an ambient
temperature Tair=60°C and Pout=30W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / T ) - Pout +
Pin ) of the heat sink, including the contact resistance, is:
Rth(case-air) = (90°C - 60°C) / (30W/40% - 30W + 0.05W) = 0.67 °C/W
When mounting the module with the thermal resistance of 0.67 °C/W, the channel temperature of each stage transistor is:
Tch1 = Tair + 66.5 °C
Tch2 = Tair + 48.5 °C
The 175°C maximum rating for the channel temperature ensures application under derated conditions.
Output Power Control:
Depending on linearity, the following three methods are recommended to control the output power:
a) Non-linear FM modulation at high power operating:
By the gate voltage(VGG).
When the gate voltage is close to zero, the nominal output signal (Pout=30W) is attenuated up to 60 dB and only a
small leakage current flows from the battery into the drain.
Around VGG=0V(minimum), the output power and drain current increases substantially.
Around VGG=4V (typical) to VGG=5V (maximum), the nominal output power becomes available.
b) Linear AM modulation:
By RF input power Pin. The gate voltage is used to set the drain’s quiescent current for the required linearity.
Publication Date : Oct．2011
7
< Silicon RF Power Modules >
RA30H4552M1
RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
Oscillation:
To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a
4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation, the following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module?
b) Is the load impedance ZL=50?
c) Is the source impedance ZG=50?
ATTENTION:
1.High Temperature ; This product might have a heat generation while operation,Please take notice that have a
possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. At the
near the product,do not place the combustible material that have possibilities to arise the fire.
2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice that do not
leakage the unnecessary electric wave and use this products without cause damage for human and property per
normal operation.
3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and electric
wave obstacle for equipment.
PRECAUTIONS FOR THE USE OF MITSUBISHI SILICON RF POWER DEVICES:
1. The specifications of mention are not guarantee values in this data sheet. Please confirm additional details regarding
operation of these products from the formal specification sheet. For copies of the formal specification sheets, please
contact one of our sales offices.
2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed for
consumer mobile communication terminals and were not specifically designed for use in other applications.
In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a
quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for
critical communications elements and In the application, which is base station applications and fixed station
applications that operate with long term continuous transmission and a higher on-off frequency during transmitting,
please consider the derating, the redundancy system, appropriate setting of the maintain period and others as needed.
For the reliability report which is described about predicted operating life time of Mitsubishi Silicon RF Products ,
please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor.
3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore appropriate
ESD precautions are required.
4. In the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or
destroyed due to the RF-swing exceed the breakdown voltage.
5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is recommended
to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the
channel temperature for RD series products lower than 120deg/C(in case of Tchmax=150deg/C) ,140deg/C(in case of
Tchmax=175deg/C) under standard conditions.
6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded
maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short
current flow between the drain and the source of the device. These results causes in fire or injury.
7. For specific precautions regarding assembly of these products into the equipment, please refer to the supplementary
items in the specification sheet.
8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way
from it’s original form.
9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of this
data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
Publication Date : Oct．2011
8
< Silicon RF Power Modules >
RA30H4552M1
RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party’s
rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application
examples contained in these materials.
•All information contained in these materials, including product data, diagrams, charts, programs and algorithms
represents information on products at the time of publication of these materials, and are subject to change by
Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore
recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor
product distributor for the latest product information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric
Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or
errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including
the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/).
•When using any or all of the information contained in these materials, including product data, diagrams, charts,
programs, and algorithms, please be sure to evaluate all information as a total system before making a final
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responsibility for any damage, liability or other loss resulting from the information contained herein.
•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system
that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric
Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product
contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical,
aerospace, nuclear, or undersea repeater use.
•The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part
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Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of
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•Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for
further details on these materials or the products contained therein.
© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Oct．2011
9