FDMC7572S N-Channel Power Trench® SyncFETTM 25 V, 40 A, 3.15 mΩ Features General Description Max rDS(on) = 3.15 mΩ at VGS = 10 V, ID = 22.5 A The FDMC7572S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode Applications 100% UIL Tested Synchronous Rectifier for DC/DC Converters RoHS Compliant Notebook Vcore/ GPU low side switch Networking Point of Load low side switch Telecom secondary side rectification Bottom Top S D D D Pin 1 S S G D 5 4 G D 6 3 D 7 2 S D 8 1 S S D Power 33 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage (Note 4) Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C PD TJ, TSTG Units V ±20 V 40 103 (Note 1a) -Pulsed 22.5 A 120 Single Pulse Avalanche Energy EAS Ratings 25 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 84 52 (Note 1a) Operating and Storage Junction Temperature Range 2.3 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 2.4 (Note 1a) 53 °C/W Package Marking and Ordering Information Device Marking FDMC7572S Device FDMC7572S ©2011 Fairchild Semiconductor Corporation FDMC7572S Rev.C1 Package Power 33 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC7572S N-Channel Power Trench® SyncFETTM August 2011 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient 25 V ID = 10 mA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V 500 μA IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA 3.0 V 21 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 10 mA, referenced to 25 °C -5 VGS = 10 V, ID = 22.5 A 2.5 rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 18 A 3.6 4.7 VGS = 10 V, ID = 22.5 A, TJ = 125 °C 3.5 4.5 VDS = 5 V, ID = 22.5 A 122 gFS Forward Transconductance 1.2 1.7 mV/°C 3.15 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 13 V, VGS = 0 V, f = 1 MHz 2031 2705 pF 596 795 pF 134 205 pF 1.1 2.4 Ω Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge 11 22 ns 3.6 10 ns 26 41 ns 3 10 ns VGS = 0 V to 10 V 31 44 nC VGS = 0 V to 4.5 V VDD = 13 V ID = 22.5 A 14 20 6.5 nC 3.9 nC VDD = 13 V, ID = 22.5 A, VGS = 10 V, RGEN = 6 Ω nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 22.5 A (Note 2) 0.79 1.2 VGS = 0 V, IS = 2 A (Note 2) 0.47 0.8 24 39 ns 19 34 nC IF = 22.5 A, di/dt = 300 A/μs V NOTES: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. 53 °C/W when mounted on a 1 in2 pad of 2 oz copper 125 °C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %. 3. EAS of 84 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 13 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 20 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. FDMC7572S Rev.C1 2 www.fairchildsemi.com FDMC7572S N-Channel Power Trench® SyncFETTM Electrical Characteristics TJ = 25 °C unless otherwise noted 120 VGS = 4.5 V VGS = 3.5 V ID, DRAIN CURRENT (A) 90 8 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V VGS = 3 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 60 30 VGS = 2.5 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 7 VGS = 2.5 V 6 5 VGS = 3 V 4 3 VGS = 3.5 V 2 VGS = 4.5 V 1 VGS = 10 V 0 0 0 1 2 3 4 0 5 30 12 ID = 22.5 A 1.4 V = 10 V GS rDS(on), DRAIN TO 1.3 1.2 1.1 1.0 0.9 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.5 0.8 -75 120 ID = 22.5 A 10 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 8 6 TJ = 125 oC 4 2 TJ = 25 oC 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 90 VDS = 5 V 60 TJ = 125 oC TJ = 25 oC 30 TJ = -55 oC 2.0 2.5 3.0 3.5 6 8 10 Figure 4. On-Resistance vs Gate to Source Voltage 120 1.5 4 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature 0 1.0 90 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage Figure 1. On-Region Characteristics ID, DRAIN CURRENT (A) 60 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) 200 100 VGS = 0 V 10 TJ = 125 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 4.0 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMC7572S Rev.C1 3 1.2 www.fairchildsemi.com FDMC7572S N-Channel Power Trench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted 3000 ID = 22.5 A Ciss 8 VDD = 16 V VDD = 10 V 1000 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = 13 V 4 Coss 2 100 f = 1 MHz 0 0 4 8 12 16 20 24 28 32 Figure 7. Gate Charge Characteristics 120 10 ID, DRAIN CURRENT (A) TJ = 25 oC TJ = 100 oC TJ = 125 oC VGS = 10 V 80 VGS = 4.5 V 40 o Limited by Package 1 0.01 0.1 1 10 0 25 100 50 2000 1000 P(PK), PEAK TRANSIENT POWER (W) 100 us 1 ms 0.1 0.01 0.01 10 ms 100 ms SINGLE PULSE TJ = MAX RATED 1s RθJA = 125 oC/W 10 s TA = 25 oC DC 0.1 1 10 100 VDS, DRAIN to SOURCE VOLTAGE (V) 125 150 SINGLE PULSE VGS = 10 V o RθJA = 125 C/W o TA = 25 C 100 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 100 10 1000 t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area FDMC7572S Rev.C1 100 Figure 10. Maximum Continuous Drain Current vs Case Temperature 200 100 THIS AREA IS LIMITED BY rDS(on) 75 o Figure 9. Unclamped Inductive Switching Capability 10 RθJC = 2.4 C/W TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) 1 30 10 Figure 8. Capacitance vs Drain to Source Voltage 30 IAS, AVALANCHE CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) ID, DRAIN CURRENT (A) Crss VGS = 0 V 60 0.1 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMC7572S N-Channel Power Trench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve FDMC7572S Rev.C1 5 www.fairchildsemi.com FDMC7572S N-Channel Power Trench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted SyncFET Schottky body diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 13 shows the reverses recovery characteristic of the FDMC7572S. -2 IDSS, REVERSE LEAKAGE CURRENT (A) 25 CURRENT (A) 20 15 di/dt = 300 A/μs 10 5 0 -5 0 50 100 150 200 TIME (ns) TJ = 125 oC -3 10 TJ = 100 oC -4 10 -5 10 TJ = 25 oC -6 10 0 5 10 15 20 25 VDS, REVERSE VOLTAGE (V) Figure 13. FDMC7572S SyncFET body diode reverse recovery characteristic FDMC7572S Rev.C1 10 Figure 14. SyncFET body diode reverses leakage versus drain-source voltage 6 www.fairchildsemi.com FDMC7572S N-Channel Power Trench® SyncFETTM Typical Characteristics (continued) FDMC7572S N-Channel Power Trench® SyncFETTM Dimensional Outline and Pad Layout 3.40 3.20 PKG C L 8 3.40 2.37 MIN A (0.45) 8 B 5 1 2.15 MIN 1.70 3.40 3.20 PKG C L KEEP OUT AREA SYM C L 5 0.70 MIN (0.40) (0.65) 4 1 SEE DETAIL A 4 0.65 0.42 MIN 1.95 LAND PATTERN RECOMMENDATION 0.10 C A B 0.37 0.27 1 PKG C L 1.95 0.65 4 0.50 0.30 (0.20) 2.09 (1.65) 1.89 (0.67) 8 (0.39) 0.52 5 NOTES: UNLESS OTHERWISE SPECIFIED A) PACKAGE STANDARD REFERENCE: JEDEC MO-240, ISSUE A, VAR. BA, DATED OCTOBER 2002. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994. E) IT IS RECOMMENDED TO HAVE NO TRACES OR VIAS WITHIN THE KEEP OUT AREA. F) DRAWING FILE NAME: PQFN08BREV2 (2.27) 0.10 C 1.00 0.85 0.08 C 0.23 0.18 0.05 0.00 DETAIL A C SEATING PLANE SCALE: 2X FDMC7572S Rev.C1 7 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. 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I55 FDMC7572S Rev.C1 8 www.fairchildsemi.com FDMC7572S N-Channel Power Trench® SyncFETTM TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ PDP SPM™ The Power Franchise® FlashWriter® * AccuPower™ The Right Technology for Your Success™ FPS™ Power-SPM™ ® Auto-SPM™ F-PFS™ PowerTrench® AX-CAP™* FRFET® PowerXS™ BitSiC® Global Power ResourceSM Programmable Active Droop™ TinyBoost™ QFET® Build it Now™ Green FPS™ TinyBuck™ Green FPS™ e-Series™ QS™ CorePLUS™ TinyCalc™ Gmax™ Quiet Series™ CorePOWER™ TinyLogic® GTO™ RapidConfigure™ CROSSVOLT™ TINYOPTO™ CTL™ IntelliMAX™ ™ TinyPower™ Current Transfer Logic™ ISOPLANAR™ TinyPWM™ DEUXPEED® MegaBuck™ Saving our world, 1mW/W/kW at a time™ TinyWire™ Dual Cool™ MICROCOUPLER™ SignalWise™ TranSiC® EcoSPARK® MicroFET™ SmartMax™ TriFault Detect™ EfficentMax™ MicroPak™ SMART START™ TRUECURRENT®* ESBC™ MicroPak2™ SPM® μSerDes™ STEALTH™ MillerDrive™ ® SuperFET® MotionMax™ ® SuperSOT™-3 Motion-SPM™ Fairchild UHC® SuperSOT™-6 mWSaver™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-8 OptiHiT™ FACT Quiet Series™ UniFET™ SupreMOS® OPTOLOGIC® FACT® VCX™ OPTOPLANAR® SyncFET™ FAST® ® VisualMax™ Sync-Lock™ FastvCore™ XS™ ®* FETBench™