FAIRCHILD FDMS86520

FDMS86520
N-Channel PowerTrench® MOSFET
60 V, 42 A, 7.4 mΩ
Features
General Description
„ Max rDS(on) = 7.4 mΩ at VGS = 10 V, ID = 14 A
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
„ Max rDS(on) = 10.3 mΩ at VGS = 8 V, ID = 12.5 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
„ Next generation enhanced
engineered for soft recovery
body
diode
technology,
Applications
„ MSL1 robust package design
„ Primary DC-DC Switch
„ 100% UIL tested
„ Motor Bridge Switch
„ RoHS Compliant
„ Synchronous Rectifier
Bottom
Top
Pin 1
S
D
D
D
S
S
G
S
D
S
D
S
D
G
D
D
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous (Package limited)
ID
TC = 25 °C
-Continuous (Silicon limited)
TC = 25 °C
-Continuous
TA = 25 °C
PD
TJ, TSTG
Units
V
±20
V
42
74
(Note 1a)
-Pulsed
14
A
80
Single Pulse Avalanche Energy
EAS
Ratings
60
(Note 3)
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
86
69
(Note 1a)
Operating and Storage Junction Temperature Range
2.5
-55 to +150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
1.8
(Note 1a)
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMS86520
Device
FDMS86520
©2012 Fairchild Semiconductor Corporation
FDMS86520 Rev. C1
Package
Power 56
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMS86520 N-Channel PowerTrench® MOSFET
October 2012
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 48 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±100
nA
4.5
V
60
V
30
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
-11
VGS = 10 V, ID = 14 A
6.0
7.4
rDS(on)
Static Drain to Source On Resistance
VGS = 8 V, ID = 12.5 A
7.3
10.3
VGS = 10 V, ID = 14 A, TJ = 125 °C
9
11
VDS = 10 V, ID = 14 A
49
gFS
Forward Transconductance
2.5
3.6
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 30 V, VGS = 0 V,
f = 1 MHz
0.1
2140
2850
pF
624
830
pF
24
40
pF
0.7
2.1
Ω
ns
Switching Characteristics
td(on)
Turn-On Delay Time
17
31
tr
Rise Time
14
ns
td(off)
Turn-Off Delay Time
VDD = 30 V, ID = 14 A,
VGS = 10 V, RGEN = 6 Ω
6.7
20
32
ns
tf
Fall Time
4
10
ns
Qg
Total Gate Charge
VGS = 0 V to 10 V
28
40
nC
Qg
Total Gate Charge
VGS = 0 V to 8 V
23
33
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 30 V,
ID = 14 A
nC
10.9
nC
5.6
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 2.1 A
(Note 2)
0.74
1.2
VGS = 0 V, IS = 14 A
(Note 2)
0.83
1.3
IF = 14 A, di/dt = 100 A/μs
IF = 14 A, di/dt = 300 A/μs
V
37
60
ns
21
35
nC
31
49
ns
40
64
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a) 50 °C/W when mounted on a
1 in2 pad of 2 oz copper
b) 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 86 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 24 A, VDD = 54 V, VGS = 10 V.
©2012 Fairchild Semiconductor Corporation
FDMS86520 Rev. C1
2
www.fairchildsemi.com
FDMS86520 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
6
VGS = 10 V
VGS = 8 V
VGS = 7 V
60
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
80
VGS = 6.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
40
VGS = 6 V
20
VGS = 5.5 V
0
0
1
2
3
4
VGS = 5.5 V
5
VGS = 6 V
4
VGS = 6.5 V
3
VGS = 7 V
2
VGS = 8 V
1
0
5
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
20
40
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
rDS(on), DRAIN TO
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-75
-50
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
80
40
ID = 14 A
VGS = 10 V
1.6
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID = 14 A
30
20
TJ = 125 oC
10
TJ = 25 oC
0
5
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
100
IS, REVERSE DRAIN CURRENT (A)
80
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID, DRAIN CURRENT (A)
60
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.7
60
VDS = 5 V
40
TJ = 150 oC
TJ = 25 oC
20
TJ = -55 oC
0
VGS = 10 V
2
3
4
5
6
7
VGS = 0 V
10
TJ = 150 oC
1
TJ = 25 oC
0.1
0.001
0.0
8
TJ = -55 oC
0.01
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2012 Fairchild Semiconductor Corporation
FDMS86520 Rev. C1
3
1.2
www.fairchildsemi.com
FDMS86520 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
10000
ID = 14 A
VDD = 30 V
Ciss
8
VDD = 20 V
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 40 V
6
4
1000
Coss
100
Crss
10
2
f = 1 MHz
VGS = 0 V
0
0
5
10
15
20
25
1
0.1
30
1
Figure 7. Gate Charge Characteristics
80
VGS = 10 V
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
60
Figure 8. Capacitance vs Drain
to Source Voltage
100
TJ = 25 oC
10
TJ = 100 oC
60
VGS = 8 V
40
Limited by Package
20
o
RθJC = 1.8 C/W
TJ = 125 oC
1
0.001
0.01
0.1
1
10
0
25
100
50
P(PK), PEAK TRANSIENT POWER (W)
100 μs
10
0.1
1 ms
10 ms
100 ms
SINGLE PULSE
TJ = MAX RATED
1s
RθJA = 125 oC/W
10 s
TA = 25 oC
0.01
0.01
0.1
DC
1
10
100 300
150
2000
1000
SINGLE PULSE
RθJA = 125 oC/W
TA = 25 oC
100
10
1
0.5 -4
10
-3
10
-2
10
-1
10
1
100
10
1000
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2012 Fairchild Semiconductor Corporation
FDMS86520 Rev. C1
125
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
100
THIS AREA IS
LIMITED BY rDS(on)
100
o
Figure 9. Unclamped Inductive
Switching Capability
1
75
TC, CASE TEMPERATURE ( C)
tAV, TIME IN AVALANCHE (ms)
ID, DRAIN CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDMS86520 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.01
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 125 C/W
0.001
0.0005 -4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2012 Fairchild Semiconductor Corporation
FDMS86520 Rev. C1
5
www.fairchildsemi.com
FDMS86520 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
FDMS86520 N-Channel PowerTrench® MOSFET
Dimensional Outline and Pad Layout
©2012 Fairchild Semiconductor Corporation
FDMS86520 Rev. C1
6
www.fairchildsemi.com
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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As used here in:
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and (c) whose failure to perform when properly used in accordance with
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expected to result in a significant injury of the user.
2.
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Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Definition
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I61
©2012 Fairchild Semiconductor Corporation
FDMS86520 Rev. C1
7
www.fairchildsemi.com
FDMS86520 N-Channel PowerTrench® MOSFET
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