FDMS86520 N-Channel PowerTrench® MOSFET 60 V, 42 A, 7.4 mΩ Features General Description Max rDS(on) = 7.4 mΩ at VGS = 10 V, ID = 14 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. Max rDS(on) = 10.3 mΩ at VGS = 8 V, ID = 12.5 A Advanced Package and Silicon combination for low rDS(on) and high efficiency Next generation enhanced engineered for soft recovery body diode technology, Applications MSL1 robust package design Primary DC-DC Switch 100% UIL tested Motor Bridge Switch RoHS Compliant Synchronous Rectifier Bottom Top Pin 1 S D D D S S G S D S D S D G D D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C PD TJ, TSTG Units V ±20 V 42 74 (Note 1a) -Pulsed 14 A 80 Single Pulse Avalanche Energy EAS Ratings 60 (Note 3) Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 86 69 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1.8 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS86520 Device FDMS86520 ©2012 Fairchild Semiconductor Corporation FDMS86520 Rev. C1 Package Power 56 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS86520 N-Channel PowerTrench® MOSFET October 2012 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4.5 V 60 V 30 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C -11 VGS = 10 V, ID = 14 A 6.0 7.4 rDS(on) Static Drain to Source On Resistance VGS = 8 V, ID = 12.5 A 7.3 10.3 VGS = 10 V, ID = 14 A, TJ = 125 °C 9 11 VDS = 10 V, ID = 14 A 49 gFS Forward Transconductance 2.5 3.6 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 30 V, VGS = 0 V, f = 1 MHz 0.1 2140 2850 pF 624 830 pF 24 40 pF 0.7 2.1 Ω ns Switching Characteristics td(on) Turn-On Delay Time 17 31 tr Rise Time 14 ns td(off) Turn-Off Delay Time VDD = 30 V, ID = 14 A, VGS = 10 V, RGEN = 6 Ω 6.7 20 32 ns tf Fall Time 4 10 ns Qg Total Gate Charge VGS = 0 V to 10 V 28 40 nC Qg Total Gate Charge VGS = 0 V to 8 V 23 33 Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 30 V, ID = 14 A nC 10.9 nC 5.6 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2.1 A (Note 2) 0.74 1.2 VGS = 0 V, IS = 14 A (Note 2) 0.83 1.3 IF = 14 A, di/dt = 100 A/μs IF = 14 A, di/dt = 300 A/μs V 37 60 ns 21 35 nC 31 49 ns 40 64 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50 °C/W when mounted on a 1 in2 pad of 2 oz copper b) 125 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS of 86 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 24 A, VDD = 54 V, VGS = 10 V. ©2012 Fairchild Semiconductor Corporation FDMS86520 Rev. C1 2 www.fairchildsemi.com FDMS86520 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 6 VGS = 10 V VGS = 8 V VGS = 7 V 60 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 80 VGS = 6.5 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 40 VGS = 6 V 20 VGS = 5.5 V 0 0 1 2 3 4 VGS = 5.5 V 5 VGS = 6 V 4 VGS = 6.5 V 3 VGS = 7 V 2 VGS = 8 V 1 0 5 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 20 40 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics rDS(on), DRAIN TO 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 80 40 ID = 14 A VGS = 10 V 1.6 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID = 14 A 30 20 TJ = 125 oC 10 TJ = 25 oC 0 5 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 100 IS, REVERSE DRAIN CURRENT (A) 80 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) 60 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.7 60 VDS = 5 V 40 TJ = 150 oC TJ = 25 oC 20 TJ = -55 oC 0 VGS = 10 V 2 3 4 5 6 7 VGS = 0 V 10 TJ = 150 oC 1 TJ = 25 oC 0.1 0.001 0.0 8 TJ = -55 oC 0.01 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2012 Fairchild Semiconductor Corporation FDMS86520 Rev. C1 3 1.2 www.fairchildsemi.com FDMS86520 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 10000 ID = 14 A VDD = 30 V Ciss 8 VDD = 20 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 40 V 6 4 1000 Coss 100 Crss 10 2 f = 1 MHz VGS = 0 V 0 0 5 10 15 20 25 1 0.1 30 1 Figure 7. Gate Charge Characteristics 80 VGS = 10 V ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 60 Figure 8. Capacitance vs Drain to Source Voltage 100 TJ = 25 oC 10 TJ = 100 oC 60 VGS = 8 V 40 Limited by Package 20 o RθJC = 1.8 C/W TJ = 125 oC 1 0.001 0.01 0.1 1 10 0 25 100 50 P(PK), PEAK TRANSIENT POWER (W) 100 μs 10 0.1 1 ms 10 ms 100 ms SINGLE PULSE TJ = MAX RATED 1s RθJA = 125 oC/W 10 s TA = 25 oC 0.01 0.01 0.1 DC 1 10 100 300 150 2000 1000 SINGLE PULSE RθJA = 125 oC/W TA = 25 oC 100 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 100 10 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2012 Fairchild Semiconductor Corporation FDMS86520 Rev. C1 125 Figure 10. Maximum Continuous Drain Current vs Case Temperature 100 THIS AREA IS LIMITED BY rDS(on) 100 o Figure 9. Unclamped Inductive Switching Capability 1 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS86520 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.001 0.0005 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMS86520 Rev. C1 5 www.fairchildsemi.com FDMS86520 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDMS86520 N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2012 Fairchild Semiconductor Corporation FDMS86520 Rev. C1 6 www.fairchildsemi.com tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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Definition Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 ©2012 Fairchild Semiconductor Corporation FDMS86520 Rev. 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