FDMC7660S N-Channel Power Trench® SyncFET™ 30 V, 20 A, 2.2 mΩ Features General Description Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 20 A The FDMC7660S has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Max rDS(on) = 2.95 mΩ at VGS = 4.5 V, ID = 18 A High performance technology for extremely low rDS(on) Termination is Lead-free and RoHS Compliant Applications Synchronous Rectifier for DC/DC Converters Notebook Vcore/GPU low side switch Networking Point of Load low side switch Telecom secondary side rectification Pin 1 S D D Top D S S G D D 5 4 G D 6 3 S D 7 2 S D 8 1 S Bottom Power 33 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage (Note 4) Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C V 20 A 200 (Note 3) 128 41 Power Dissipation TJ, TSTG ±20 100 (Note 1a) Power Dissipation PD Units V 40 -Pulsed Single Pulse Avalanche Energy EAS Ratings 30 (Note 1a) Operating and Storage Junction Temperature Range 2.3 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 3 (Note 1a) 53 °C/W Package Marking and Ordering Information Device Marking FDMC7660S Device FDMC7660S ©2009 Fairchild Semiconductor Corporation FDMC7660S Rev.C Package Power 33 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMC7660S N-Channel Power Trench® SyncFET™ December 2009 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient 30 V ID = 1 mA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA IGSS Gate to Source Leakage Current VGS = 20 V, VDS = 0 V 100 nA 2.5 V 13 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 1 mA, referenced to 25 °C -3 VGS = 10 V, ID = 20 A 1.7 2.2 rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 18 A 2.5 2.95 VGS = 10 V, ID = 20 A, TJ = 125 °C 2.2 3.1 VDD = 5 V, ID = 20 A 129 VDS = 15 V, VGS = 0 V, f = 1 MHz 3250 4325 pF 1260 1680 pF 105 160 pF gFS Forward Transconductance 1.2 1.6 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Ω 0.8 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) VDD = 15 V, ID = 20 A, VGS = 10 V, RGEN = 6 Ω 14 25 ns 5 10 ns 34 54 ns 3.9 10 ns Total Gate Charge VGS = 0 V to 10 V 47 66 nC Total Gate Charge VGS = 0 V to 4.5 V VDD = 15 V ID = 20 A 21 29 nC 9.5 nC 5 nC Qgs Total Gate Charge Qgd Gate to Drain “Miller” Charge Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 20 A (Note 2) 0.8 1.2 VGS = 0 V, IS = 1.9 A (Note 2) 0.4 0.7 IF = 20 A, di/dt = 300 A/µs V 31 50 ns 39 62 nC NOTES: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 53°C/W when mounted on a 1 in2 pad of 2 oz copper b. 125°C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0 %. 3. Starting TJ = 25oC; N-ch: L = 1 mH, IAS = 16 A, VDD = 27 V, VGS = 10 V. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied. ©2009 Fairchild Semiconductor Corporation FDMC7660S Rev.C 2 www.fairchildsemi.com FDMC7660S N-Channel Power Trench® SyncFET™ Electrical Characteristics TJ = 25 °C unless otherwise noted 200 150 VGS = 6 V VGS = 4.5 V VGS = 4 V 100 VGS = 3.5 V 50 VGS = 3 V 0 0.0 0.5 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 1.0 1.5 2.0 4 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 10 V PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 3 VGS = 3 V VGS = 3.5 V 2 1 VGS = 4 V 0 2.5 0 50 VDS, DRAIN TO SOURCE VOLTAGE (V) 150 200 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 10 ID = 20 A VGS = 10 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 100 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics IS, REVERSE DRAIN CURRENT (A) 125 oC 100 TJ = 25 oC 50 TJ = -55 oC 3 4 TJ = 125 oC 2 TJ = 25 oC 200 100 4 6 8 10 VGS = 0 V 10 TJ = 125 oC TJ = 25 oC 1 0.1 TJ = -55 oC 0.01 0.001 0.0 0 2 6 Figure 4. On-Resistance vs Gate to Source Voltage 150 1 ID = 20 A VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX TJ = 8 2 200 VDS = 5 V PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs Junction Temperature ID, DRAIN CURRENT (A) VGS = 10 V VGS = 6 V VGS = 4.5 V 4 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2009 Fairchild Semiconductor Corporation FDMC7660S Rev.C 3 1.2 www.fairchildsemi.com FDMC7660S N-Channel Power Trench® SyncFET™ Typical Characteristics TJ = 25 °C unless otherwise noted 10000 VGS, GATE TO SOURCE VOLTAGE (V) 10 Ciss ID = 20 A CAPACITANCE (pF) 8 VDD = 15 V 6 VDD = 10 V VDD = 20 V 4 Coss 1000 Crss 100 2 f = 1 MHz VGS = 0 V 0 0 10 20 30 40 10 0.1 50 1 10 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 150 50 o ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) RθJC = 3 C/W TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 120 VGS = 10 V 90 VGS = 4.5 V 60 30 Limited by Package 1 0.01 0.1 1 10 100 0 25 1000 50 125 150 Figure 10. Maximum Continuous Drain Current vs Ambient Temperature 500 P(PK), PEAK TRANSIENT POWER (W) 3000 100 ID, DRAIN CURRENT (A) 100 o Figure 9. Unclamped Inductive Switching Capability 100 us 10 1 75 Tc, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) 1 ms 10 ms THIS AREA IS LIMITED BY rDS(on) 0.1 100 ms SINGLE PULSE TJ = MAX RATED 1s RθJA = 125 oC/W 10 s DC TA = 25 oC 0.01 0.01 0.1 1 10 100 TA = 25 oC 100 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 100 10 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2009 Fairchild Semiconductor Corporation FDMC7660S Rev.C SINGLE PULSE RθJA = 125 oC/W 1000 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMC7660S N-Channel Power Trench® SyncFET™ Typical Characteristics TJ = 25 °C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA 0.001 SINGLE PULSE o RθJA = 125 C/W 0.0001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDMC7660S Rev.C 5 www.fairchildsemi.com FDMC7660S N-Channel Power Trench® SyncFET™ Typical Characteristics TJ = 25 °C unless otherwise noted SyncFET Schottky body diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 27 shows the reverse recovery characteristic of the FDMC7660S. -1 IDSS, REVERSE LEAKAGE CURRENT (A) 20 di/dt = 300 A/µs CURRENT (A) 15 10 5 0 -5 0 50 100 150 200 TJ = 125 oC -2 10 -3 10 TJ = 100 oC -4 10 -5 10 TJ = 25 oC -6 10 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) TIME (ns) Figure 15. SyncFET body diode reverse Figure 14. FDMC7660S SyncFET body diode reverse recovery characteristic ©2009 Fairchild Semiconductor Corporation FDMC7660S Rev.C 10 leakage versus drain-source voltage 6 www.fairchildsemi.com FDMC7660S N-Channel Power Trench® SyncFET™ Typical Characteristics (continued) FDMC7660S N-Channel Power Trench® SyncFET™ Dimensional Outline and Pad Layout ©2009 Fairchild Semiconductor Corporation FDMC7660S Rev.C 7 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I44 ©2009 Fairchild Semiconductor Corporation FDMC7660S Rev.C 8 www.fairchildsemi.com FDMC7660S N-Channel Power Trench® SyncFET™ TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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