HUFA75639S3ST_F085A Data Sheet March 2012 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER HUFA75639S3ST_F085A PACKAGE BRAND TO263AB 75639S G NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUFA75639S3ST. S Packaging DRAIN (FLANGE) GATE SOURCE JEDEC TO-263AB This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html. All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2012 Fairchild Semiconductor Corporation HUFA75639S3ST_F085A Rev. C1 HUFA75639S3ST_F085A Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg UNITS V V V 100 100 ±20 56 Figure 4 Figures 6, 14, 15 200 1.35 -55 to 175 A W W/oC oC 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS 100 - - V VDS = 95V, VGS = 0V - - 1 µA VDS = 90V, VGS = 0V, TC = 150oC - - 250 µA VGS = ±20V - - ±100 nA OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current BVDSS IDSS IGSS ID = 250µA, VGS = 0V (Figure 11) ON STATE SPECIFICATIONS Gate to Source Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (Figure 10) 2 - 4 V Drain to Source On Resistance rDS(ON) ID = 56A, VGS = 10V (Figure 9) - 0.021 0.025 Ω THERMAL SPECIFICATIONS Thermal Resistance Junction to Case RθJC (Figure 3) - - 0.74 oC/W Thermal Resistance Junction to Ambient RθJA TO-247 - - 30 oC/W TO-220, TO-263 - - 62 oC/W VDD = 50V, ID ≅ 56A, RL = 0.89Ω, VGS = 10V, RGS = 5.1Ω - - 110 ns - 15 - ns tr - 60 - ns td(OFF) - 20 - ns tf - 25 - ns tOFF - - 70 ns - 110 130 nC - 57 75 nC - 3.7 4.5 nC SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time tON td(ON) GATE CHARGE SPECIFICATIONS Qg(TOT) VGS = 0V to 20V Gate Charge at 10V Qg(10) VGS = 0V to 10V Threshold Gate Charge Qg(TH) VGS = 0V to 2V Total Gate Charge VDD = 50V, ID ≅ 56A, RL = 0.89Ω Ig(REF) = 1.0mA (Figure 13) Gate to Source Gate Charge Qgs - 9.8 - nC Gate to Drain “Miller” Charge Qgd - 24 - nC ©2012 Fairchild Semiconductor Corporation HUFA75639S3ST_F085A Rev. C1 HUFA75639S3ST_F085A TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS - 2000 - pF - 500 - pF - 65 - pF CAPACITANCE SPECIFICATIONS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VDS = 25V, VGS = 0V, f = 1MHz (Figure 12) Source to Drain Diode Specifications SYMBOL PARAMETER Source to Drain Diode Voltage MIN TYP MAX UNITS ISD = 56A - - 1.25 V trr ISD = 56A, dISD/dt = 100A/µs - - 110 ns QRR ISD = 56A, dISD/dt = 100A/µs - - 320 nC VSD Reverse Recovery Time Reverse Recovered Charge TEST CONDITIONS 1.2 60 1.0 50 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER Typical Performance Curves 0.8 0.6 0.4 40 30 20 10 0.2 0 0 0 25 50 75 100 125 150 25 175 50 TC , CASE TEMPERATURE (oC) 75 100 125 150 175 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 2 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 ZθJC, NORMALIZED THERMAL IMPEDANCE 1 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 100 101 t, RECTANGULAR PULSE DURATION (s) FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE ©2012 Fairchild Semiconductor Corporation HUFA75639S3ST_F085A Rev. C1 HUFA75639S3ST_F085A Typical Performance Curves (Continued) IDM , PEAK CURRENT (A) 1000 TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 175 - TC I = I25 150 100 VGS = 10V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 10 10-5 10-4 10-3 10-2 10-1 100 101 t, PULSE WIDTH (s) FIGURE 4. PEAK CURRENT CAPABILITY 300 1000 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) TJ = MAX RATED TC = 25oC 100 100µs 10 1ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 10ms VDSS(MAX) = 100V 10 100 100 STARTING TJ = 25oC STARTING TJ = 150oC 10 0.001 1 1 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 200 1 0.1 0.01 tAV, TIME IN AVALANCHE (ms) VDS , DRAIN TO SOURCE VOLTAGE (V) NOTE: Refer to Fairchild Application Notes AN9321 and AN9322. FIGURE 5. FORWARD BIAS SAFE OPERATING AREA FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY 100 100 80 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 6V VGS = 20V VGS = 10V 60 VGS = 7V 40 VGS = 5V 20 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX TC = 25oC 0 0 1 2 3 4 5 6 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 7. SATURATION CHARACTERISTICS ©2012 Fairchild Semiconductor Corporation PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDD = 15V 80 175oC 60 40 20 25oC -55oC 0 7 0 1.5 3.0 4.5 6.0 7.5 VGS , GATE TO SOURCE VOLTAGE (V) FIGURE 8. TRANSFER CHARACTERISTICS HUFA75639S3ST_F085A Rev. C1 HUFA75639S3ST_F085A Typical Performance Curves 1.2 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 56A VGS = VDS, ID = 250µA NORMALIZED GATE 2.5 2.0 1.5 1.0 THRESHOLD VOLTAGE NORMALIZED DRAIN TO SOURCE ON RESISTANCE 3.0 (Continued) 1.0 0.8 0.5 0 0.6 -80 -40 0 40 80 120 160 200 -80 -40 TJ, JUNCTION TEMPERATURE (oC) 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC) FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 1.2 3000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD ID = 250µA 2500 C, CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 0 1.1 1.0 2000 CISS 1500 1000 COSS 500 CRSS 0.9 -80 0 -40 0 40 80 120 160 200 0 10 TJ , JUNCTION TEMPERATURE (oC) 20 30 40 50 60 VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE VGS , GATE TO SOURCE VOLTAGE (V) 10 8 6 4 WAVEFORMS IN DESCENDING ORDER: ID = 56A ID = 37A ID = 18A 2 VDD = 50V 0 0 10 20 30 40 50 60 Qg, GATE CHARGE (nC) NOTE: Refer to Fairchild Application Notes AN7254 and AN7260. FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT ©2012 Fairchild Semiconductor Corporation HUFA75639S3ST_F085A Rev. C1 HUFA75639S3ST_F085A Test Circuits and Waveforms VDS BVDSS L tP VARY tP TO OBTAIN REQUIRED PEAK IAS IAS + RG - VGS VDS VDD VDD DUT tP 0V IAS 0 0.01Ω tAV FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS VDS VDD RL Qg(TOT) VDS VGS = 20V VGS Qg(10) + VDD VGS = 10V VGS DUT VGS = 2V IG(REF) 0 Qg(TH) Qgs Qgd Ig(REF) 0 FIGURE 16. GATE CHARGE TEST CIRCUIT FIGURE 17. GATE CHARGE WAVEFORM VDS tON tOFF td(ON) td(OFF) tr RL VDS tf 90% 90% + VGS - VDD 10% 10% 0 DUT 90% RGS VGS VGS 0 FIGURE 18. SWITCHING TIME TEST CIRCUIT ©2012 Fairchild Semiconductor Corporation 10% 50% 50% PULSE WIDTH FIGURE 19. RESISTIVE SWITCHING WAVEFORMS HUFA75639S3ST_F085A Rev. C1 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. F-PFS™ The Power Franchise® PowerTrench® 2Cool™ ® PowerXS™ FRFET® AccuPower™ Programmable Active Droop™ Global Power ResourceSM AX-CAP™* Green Bridge™ QFET® BitSiC® TinyBoost™ Build it Now™ QS™ Green FPS™ TinyBuck™ CorePLUS™ Quiet Series™ Green FPS™ e-Series™ TinyCalc™ CorePOWER™ RapidConfigure™ Gmax™ TinyLogic® CROSSVOLT™ GTO™ ™ TINYOPTO™ CTL™ IntelliMAX™ TinyPower™ Saving our world, 1mW/W/kW at a time™ Current Transfer Logic™ ISOPLANAR™ TinyPWM™ DEUXPEED® Marking Small Speakers Sound Louder SignalWise™ TinyWire™ Dual Cool™ SmartMax™ and Better™ TranSiC® EcoSPARK® SMART START™ MegaBuck™ TriFault Detect™ EfficentMax™ Solutions for Your Success™ MICROCOUPLER™ TRUECURRENT®* ESBC™ SPM® MicroFET™ μSerDes™ STEALTH™ MicroPak™ ® SuperFET® MicroPak2™ SuperSOT™-3 MillerDrive™ Fairchild® UHC® SuperSOT™-6 MotionMax™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-8 Motion-SPM™ FACT Quiet Series™ UniFET™ SupreMOS® mWSaver™ FACT® VCX™ SyncFET™ OptoHiT™ FAST® VisualMax™ Sync-Lock™ OPTOLOGIC® FastvCore™ VoltagePlus™ OPTOPLANAR® ®* FETBench™ XS™ FlashWriter® * ® FPS™ tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Definition Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 ©2012 Fairchild Semiconductor Corporation HUFA75639S3ST_F085A Rev. C1