FDMS7558S N-Channel PowerTrench® SyncFETTM 25 V, 49 A, 1.25 mΩ Features General Description Max rDS(on) = 1.25 mΩ at VGS = 10 V, ID = 32 A The FDMS7558S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Max rDS(on) = 1.75 mΩ at VGS = 4.5 V, ID = 28 A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode Applications MSL1 robust package design Synchronous Rectifier for Synchronous Buck Converters 100% UIL tested Notebook RoHS Compliant Server Telecom High Efficiency DC-DC Switch Mode Power Supplies Bottom Top Pin 1 S D D D S S G D 5 4 G D 6 3 S D 7 2 S D 8 1 S D Power 56 MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage (Note 4) Drain Current -Continuous (Package limited) ID TC = 25 °C -Continuous (Silicon limited) TC = 25 °C -Continuous TA = 25 °C PD TJ, TSTG Units V ±20 V 49 199 (Note 1a) 32 (Note 3) 288 -Pulsed A 180 Single Pulse Avalanche Energy EAS Ratings 25 Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C 89 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case 1.4 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS7558S Device FDMS7558S ©2009 Fairchild Semiconductor Corporation FDMS7558S Rev.C Package Power 56 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units www.fairchildsemi.com FDMS7558S N-Channel PowerTrench®SyncFET December 2009 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient 25 V ID = 10 mA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V 500 µA IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA 3.0 V 21 mV/°C On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 10 mA, referenced to 25 °C rDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.2 1.6 -5 mV/°C VGS = 10 V, ID = 32 A 1.0 1.25 VGS = 4.5 V, ID = 28 A 1.4 1.75 VGS = 10 V, ID = 32 A, TJ = 125 °C 1.4 1.8 VDS = 5 V, ID = 32 A 221 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 13 V, VGS = 0 V, f = 1 MHz 5843 7770 pF 1615 2150 pF 317 475 pF 0.5 1.0 Ω Switching Characteristics td(on) Turn-On Delay Time 18 33 ns tr Rise Time 9 18 ns td(off) Turn-Off Delay Time 44 70 ns tf Fall Time 5 10 ns Qg Total Gate Charge VGS = 0 V to 10 V 85 119 nC Qg Total Gate Charge 39 55 Qgs Gate to Source Gate Charge VGS = 0 V to 4.5 V VDD = 13 V, ID = 32 A Qgd Gate to Drain “Miller” Charge VDD = 13 V, ID = 32 A, VGS = 10 V, RGEN = 6 Ω nC 16.5 nC 9.7 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2 A (Note 2) 0.38 0.7 VGS = 0 V, IS = 32 A (Note 2) 0.75 1.2 39 63 ns 52 84 nC IF = 32 A, di/dt = 300 A/µs V Notes: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 50 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 125 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3. EAS of 288 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 24 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 35 A. 4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied. FDMS7558S Rev.C 2 www.fairchildsemi.com FDMS7558S N-Channel PowerTrench® SyncFET Electrical Characteristics TA = 25 °C unless otherwise noted 180 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 150 ID, DRAIN CURRENT (A) 20 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VGS = 10 V VGS = 4.5 V 120 VGS = 3.5 V VGS = 3 V 90 60 30 VGS = 2.5 V 0 0 1 2 3 4 VGS = 2.5 V 16 12 8 VGS = 3.5 V VGS = 4.5 V VGS = 10 V 4 0 5 0 30 VDS, DRAIN TO SOURCE VOLTAGE (V) 90 120 150 180 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.5 5 ID = 32 A VGS = 10 V 1.4 rDS(on), DRAIN TO 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 60 ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics 180 ID = 32 A 3 TJ = 125 oC 2 1 TJ = 25 oC 2 IS, REVERSE DRAIN CURRENT (A) 90 TJ = 125 oC 60 TJ = 25 oC 30 TJ = -55 oC 2.5 3.0 6 8 10 Figure 4. On-Resistance vs Gate to Source Voltage VDS = 5 V 2.0 4 VGS, GATE TO SOURCE VOLTAGE (V) 120 0 1.5 4 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 150 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 0 -50 Figure 3. Normalized On Resistance vs Junction Temperature ID, DRAIN CURRENT (A) PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VGS = 3 V 200 100 VGS = 0 V 10 TJ = 125 oC TJ = 25 oC 1 TJ = -55 oC 0.1 0.01 0.0 3.5 0.2 0.4 0.6 0.8 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDMS7558S Rev.C 3 1.0 www.fairchildsemi.com FDMS7558S N-Channel PowerTrench® SyncFET Typical Characteristics TJ = 25 °C unless otherwise noted 8000 ID = 32 A Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 13 V 6 VDD = 10 V VDD = 16 V 4 Coss 1000 2 f = 1 MHz VGS = 0 V 0 0 15 30 45 60 75 Figure 7. Gate Charge Characteristics ID, DRAIN CURRENT (A) 10 TJ = 100 oC TJ = 125 oC VGS = 10 V 150 VGS = 4.5 V 100 50 o Limited by Package 1 0.01 0.1 1 10 100 0 25 1000 50 RθJC = 1.4 C/W 75 100 125 150 o TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 300 P(PK), PEAK TRANSIENT POWER (W) 1000 100 1 ms 10 10 ms THIS AREA IS LIMITED BY rDS(on) 0.1 100 ms 1s SINGLE PULSE TJ = MAX RATED 10 s RθJA = 50 oC/W DC o TA = 25 C 0.01 0.01 0.1 1 10 100 VGS = 10 V SINGLE PULSE RθJA = 50 oC/W TA = 25 oC 100 10 1 0.5 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area FDMS7558S Rev.C 30 200 TJ = 25 oC 1 10 Figure 8. Capacitance vs Drain to Source Voltage 40 IAS, AVALANCHE CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) ID, DRAIN CURRENT (A) Crss 200 0.1 90 Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS7558S N-Channel PowerTrench® SyncFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 50 C/W 0.001 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve FDMS7558S Rev.C 5 www.fairchildsemi.com FDMS7558S N-Channel PowerTrench® SyncFET Typical Characteristics TJ = 25 °C unless otherwise noted SyncFET Schottky body diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MoSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverses recovery characteristic of the FDMS7558S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. -2 IDSS, REVERSE LEAKAGE CURRENT (A) 35 30 CURRENT (A) 25 20 di/dt = 300 A/µs 15 10 5 0 -5 0 5 10 15 20 25 10 TJ = 125 oC -3 10 TJ = 100 oC -4 10 -5 TJ = 25 oC 10 -6 10 0 5 10 15 20 25 TIME (ns) VDS, REVERSE VOLTAGE (V) Figure 14. FDMS7558S SyncFET body diode reverse recovery characteristic Figure 15. SyncFET body diode reverses FDMS7558S Rev.C leakage versus drain-source voltage 6 www.fairchildsemi.com FDMS7558S N-Channel PowerTrench® SyncFET Typical Characteristics (continued) FDMS7558S N-Channel PowerTrench® SyncFET Dimensional Outline and Pad Layout FDMS7558S Rev.C 7 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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I45 FDMS7558S Rev.C 8 www.fairchildsemi.com FDMS7558S N-Channel PowerTrench® SyncFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. ®* Power-SPM™ AccuPower™ FlashWriter® * PowerTrench® FPS™ Auto-SPM™ The Power Franchise® PowerXS™ F-PFS™ Build it Now™ ® Programmable Active Droop™ FRFET® CorePLUS™ QFET® Global Power ResourceSM CorePOWER™ Green FPS™ QS™ CROSSVOLT™ TinyBoost™ Quiet Series™ Green FPS™ e-Series™ CTL™ TinyBuck™ RapidConfigure™ Gmax™ Current Transfer Logic™ TinyCalc™ GTO™ DEUXPEED® TinyLogic® IntelliMAX™ Dual Cool™ ™ TINYOPTO™ ISOPLANAR™ Saving our world, 1mW/W/kW at a time™ EcoSPARK® TinyPower™ EfficentMax™ MegaBuck™ SignalWise™ TinyPWM™ EZSWITCH™* MICROCOUPLER™ SmartMax™ TinyWire™ ™* MicroFET™ SMART START™ TriFault Detect™ MicroPak™ SPM® TRUECURRENT™* STEALTH™ MillerDrive™ ® µSerDes™ SuperFET™ MotionMax™ Fairchild® SuperSOT™-3 Motion-SPM™ Fairchild Semiconductor® SuperSOT™-6 OPTOLOGIC® UHC® FACT Quiet Series™ SuperSOT™-8 OPTOPLANAR® ® ® Ultra FRFET™ FACT SupreMOS™ UniFET™ FAST® SyncFET™ VCX™ FastvCore™ Sync-Lock™ PDP SPM™ VisualMax™ FETBench™ XS™