FDMS8672AS ® N-Channel PowerTrench SyncFET tm TM 30V, 28A, 5.0mΩ Features General Description Max rDS(on) = 5.0mΩ at VGS = 10V, ID = 18A The FDMS8672AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Max rDS(on) = 7.0mΩ at VGS = 4.5V, ID = 15A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode Applications MSL1 robust package design Synchronous Rectifier for DC/DC Converters RoHS Compliant Notebook Vcore/ GPU low side switch Networking Point of Load low side switch Telecom secondary side rectification Pin 1 S D D D S S G D D 5 4 G D 6 3 S D 7 2 S D 8 1 S Power 56 (Bottom view) MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25°C -Continuous (Silicon limited) TC = 25°C -Continuous TA = 25°C PD TJ, TSTG Units V ±20 V 28 99 (Note 1a) -Pulsed 18 A 200 Single Pulse Avalanche Energy EAS Ratings 30 (Note 2) Power Dissipation TC = 25°C Power Dissipation TA = 25°C 253 70 (Note 1a) Operating and Storage Junction Temperature Range 2.5 -55 to +150 mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1.8 (Note 1a) 50 °C/W Package Marking and Ordering Information Device Marking FDMS8672AS Device FDMS8672AS ©2007 Fairchild Semiconductor Corporation FDMS8672AS Rev.B2 Package Power 56 1 Reel Size 13’’ Tape Width 12mm Quantity 3000units www.fairchildsemi.com FDMS8672AS N-Channel PowerTrench® SyncFETTM November 2007 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient 30 V ID = 10mA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V 500 µA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA 3.0 V 27 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1mA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 10mA, referenced to 25°C -5 VGS = 10V, ID = 18A 4.0 5.0 rDS(on) Static Drain to Source On Resistance VGS = 4.5V, ID = 15A 5.4 7.0 VGS = 10V, ID = 18A, TJ = 125°C 5.6 7.6 VDD = 10V, ID = 18A 85 gFS Forward Transconductance 1.0 1.9 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz 1955 2600 pF 1040 1385 pF 125 190 pF Ω 0.8 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0V to 10V Qg Total Gate Charge VGS = 0V to 4.5V Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = 15V, ID = 18A, VGS = 10V, RGEN = 6Ω VDD = 15V, ID = 18A 12 22 ns 4 10 ns 27 44 ns 3 10 ns 28 40 nC 15 21 nC 5.6 nC 3.4 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS =2A (Note 3) IF = 18A, di/dt = 300A/µs 0.4 0.7 V 32 52 ns 36 58 nC NOTES: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b. 125°C/W when mounted on a minimum pad of 2 oz copper. a. 50°C/W when mounted on a 1 in2 pad of 2 oz copper. 2. Starting TJ = 25, L = 3mH, IAS = 13A, VDD = 30V, VGS = 10V. 3. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. ©2007 Fairchild Semiconductor Corporation FDMS8672AS Rev.B2 2 www.fairchildsemi.com FDMS8672AS N-Channel PowerTrench® SyncFETTM Electrical Characteristics TJ = 25°C unless otherwise noted 3.0 VGS = 10V 160 ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 200 VGS = 5V VGS = 4.5V 120 VGS = 4V 80 VGS = 3.5V 40 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 0 0 1 2 3 VGS = 3.5V 2.5 VGS = 4V VGS = 4.5V 2.0 VGS = 5V 1.5 VGS = 10V 1.0 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 0.5 4 0 40 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics 120 160 200 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 16 1.8 ID = 18A VGS = 10V 1.6 rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -75 12 8 TJ = 125oC 4 TJ = 25oC 0 -50 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX ID = 18A SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 80 ID, DRAIN CURRENT(A) -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 175 ID, DRAIN CURRENT (A) 140 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VDS = 5V 105 70 TJ = 125oC 35 TJ = 25oC 0 1 2 TJ = -55oC 3 4 100 10 TJ = 125oC TJ = 25oC 1 0.1 TJ = -55oC 0.01 0.001 0.0 5 VGS = 0V 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2007 Fairchild Semiconductor Corporation FDMS8672AS Rev.B2 3 1.2 www.fairchildsemi.com FDMS8672AS N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25°C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) 10 5000 ID = 18A Ciss 8 6 CAPACITANCE (pF) VDD = 10V VDD = 15V VDD = 20V 4 2 Coss 1000 Crss 100 50 0.1 0 0 5 10 15 20 25 f = 1MHz VGS = 0V 30 1 Figure 7. Gate Charge Characteristics 100 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) 30 Figure 8. Capacitance vs Drain to Source Voltage 30 10 TJ = 25oC TJ = 125oC 80 VGS = 10V 60 40 Limited by Package VGS = 4.5V 20 o RθJC = 1.8 C/W 1 0.01 0.1 1 10 100 0 25 500 50 150 P(PK), PEAK TRANSIENT POWER (W) 500 100µs 10 1ms 10ms THIS AREA IS LIMITED BY rDS(on) 100ms 1s SINGLE PULSE TJ = MAX RATED 10s RθJA = 125oC/W DC TA = 25oC 0.01 0.01 125 Figure 10. Maximum Continuous Drain Current vs Case Temperature 300 100 0.1 100 o Figure 9. Unclamped Inductive Switching Capability 1 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE(ms) ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) 0.1 1 10 100 VDS, DRAIN to SOURCE VOLTAGE (V) SINGLE PULSE RθJA = 125oC/W 100 TA = 25oC 10 1 0.5 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t, PULSE WIDTH (s) Figure 11. Forward Bias Safe Operating Area ©2007 Fairchild Semiconductor Corporation FDMS8672AS Rev.B2 VGS = 10V Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDMS8672AS N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25°C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 125 C/W 0.001 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve ©2007 Fairchild Semiconductor Corporation FDMS8672AS Rev.B2 5 www.fairchildsemi.com FDMS8672AS N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25°C unless otherwise noted SyncFET Schottky Body Diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. IDSS, REVERSE LEAKAGE CURRENT (mA) Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverse recovery characteristic of the FDMS8672AS. 5 4 3 CURRENT (A) 2 1 0 -1 -2 -3 -4 -30 -15 0 TIME (ns) 15 30 45 TJ = 125oC 1 TJ = 100oC 0.1 0.01 TJ = 25oC 0.001 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V) Figure 15. SyncFET Body Diode Reverse Leakage vs Drain to Source Voltage Figure 14. FDMS8672AS SyncFET Body Diode Reverse Recovery Characteristics ©2007 Fairchild Semiconductor Corporation FDMS8672AS Rev.B2 10 6 www.fairchildsemi.com FDMS8672AS N-Channel PowerTrench® SyncFETTM Typical Characteristics (continued) FDMS8672AS N-Channel PowerTrench® SyncFETTM ©2007 Fairchild Semiconductor Corporation FDMS8672AS Rev.B2 7 www.fairchildsemi.com The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition tm Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I31 ©2007 Fairchild Semiconductor Corporation FDMS8672AS Rev.B2 www.fairchildsemi.com FDMS8672AS N-Channel PowerTrench® SyncFETTM TRADEMARKS