SuperFET® II FCPF400N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFET®II is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. • Max. RDS(on) = 400mΩ • Ultra low gate charge (typ. Qg = 28nC) This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET®II is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. • Low effective output capacitance (typ. Coss.eff = 90pF) • 100% avalanche tested D G GD S TO-220F S Absolute Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current FCPF400N60 600 -DC ±20 -AC (f>1HZ) ±30 -Continuous (TC = 25oC) 10* -Continuous (TC = 100oC) 6.3* V A IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 2.3 A EAR Repetitive Avalanche Energy (Note 1) 1.06 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt - Pulsed Units V MOSFET dv/dt 30* A (Note 2) 211.6 mJ 20 100 (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL (Note 1) - Derate above 25oC V/ns 31 W 0.25 W/oC -55 to +150 oC 300 oC FCPF400N60 Units *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case RθCS Thermal Resistance, Case to Heat Sink (Typical) 0.5 RθJA Thermal Resistance, Junction to Ambient 62.5 ©2012 Fairchild Semiconductor Corporation FCPF400N60 Rev. C2 4 1 oC/W www.fairchildsemi.com FCPF400N60 N-Channel MOSFET March 2012 Device Marking FCPF400N60 Device FCPF400N60 Package TO-220F Reel Size - Tape Width - Quantity 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units VGS = 0V, ID = 10mA, TJ = 25°C 600 - - V VGS = 0V, ID = 10mA, TJ = 150°C 650 - - V - 0.6 - V/oC - 700 - V μA Off Characteristics BVDSS Drain to Source Breakdown Voltage ΔBVDSS ΔTJ BVDS Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage IDSS Zero Gate Voltage Drain Current VDS = 480V, VGS = 0V - - 1 VDS = 480V, TC = 125oC - - 10 IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 2.5 - 3.5 V - 0.35 0.40 Ω - 11 - S ID = 10mA, Referenced to 25oC VGS = 0V, ID = 10A nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10V, ID = 5A VDS = 20V, ID = 5A Dynamic Characteristics - 1180 1580 pF - 860 1144 pF - 43 54 pF - 22 - pF VDS = 0V to 480V, VGS = 0V - 90 - pF VDS = 380V, ID = 5A VGS = 10V - 28 38 nC - 5 - nC - 10 - nC Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 380V, VGS = 0V, f = 1.0MHz Coss eff. Effective Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance VDS = 25V, VGS = 0V f = 1MHz (Note 4) Drain Open Ω 1 Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 380V, ID = 5A VGS = 10V, RG = 4.7Ω (Note 4) - 13 37 ns - 7 24 ns - 43 95 ns - 6 21 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 10 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 30 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 5A - - 1.2 V trr Reverse Recovery Time - 240 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 5A dIF/dt = 100A/μs - 2.7 - μC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 2.3A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics FCPF400N60 Rev. C2 2 www.fairchildsemi.com FCPF400N60 N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 100 VGS = 15.0V 10.0V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 10 *Notes: 1. VDS = 20V 2. 250μs Pulse Test ID, Drain Current[A] ID, Drain Current[A] 50 1 o 150 C 10 o 25 C *Notes: 1. 250μs Pulse Test o -55 C o 2. TC = 25 C 0.1 0.1 1 1 VDS, Drain-Source Voltage[V] 10 3 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 100 IS, Reverse Drain Current [A] 1.0 0.8 0.6 VGS = 10V 0.4 VGS = 20V o 150 C o 25 C 10 *Notes: 1. VGS = 0V 2. 250μs Pulse Test o *Note: TC = 25 C 0.2 0 5 10 15 20 ID, Drain Current [A] 25 1 0.3 30 Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] Ciss 100 1 0.1 0.1 FCPF400N60 Rev. C2 1.5 10 1000 10 0.6 0.9 1.2 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 10000 Capacitances [pF] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 1.2 RDS(ON) [Ω], Drain-Source On-Resistance 4 5 6 7 VGS, Gate-Source Voltage[V] Coss *Note: 1. VGS = 0V 2. f = 1MHz Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 10 100 VDS, Drain-Source Voltage [V] VDS = 120V VDS = 300V VDS = 480V 8 6 4 2 *Note: ID = 5A 0 1000 0 3 9 18 27 Qg, Total Gate Charge [nC] 36 www.fairchildsemi.com FCPF400N60 N-Channel MOSFET Typical Performance Characteristics FCPF400N60 N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.5 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 1mA 0.8 -80 -40 0 40 80 120 o TJ, Junction Temperature [ C] 2.0 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 5A 0.5 -80 160 Figure 9. Maximum Safe Operating Area vs. Case Temperature -40 0 40 80 120 o TJ, Junction Temperature [ C] 160 Figure 11. Maximum Drain Current 12 100 ID, Drain Current [A] ID, Drain Current [A] 10μs 100μs 1ms 10 10ms DC 1 Operation in This Area is Limited by R DS(on) *Notes: 0.1 9 6 3 o 1. TC = 25 C o 0.01 0.1 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 12. Eoss vs. Drain to Source Voltage Switching Capability 6 5 EOSS, [μJ] 4 3 2 1 0 0 FCPF400N60 Rev. C2 100 200 300 400 500 VDS, Drain to Source Voltage [V] 600 4 www.fairchildsemi.com FCPF400N60 N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 13. Transient Thermal Response Curve - FCPF400N60 Thermal Response [ZθJC] 5 0.5 1 0.2 0.1 0.1 t1 0.02 t2 0.01 *Notes: o 1. ZθJC(t) = 4 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.01 -5 10 FCPF400N60 Rev. C2 PDM 0.05 -4 10 -3 -2 -1 10 10 10 1 Rectangular Pulse Duration [sec] 5 10 100 www.fairchildsemi.com FCPF400N60 N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FCPF400N60 Rev. C2 6 www.fairchildsemi.com FCPF400N60 N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FCPF400N60 Rev. C2 7 www.fairchildsemi.com FCPF400N60 N-Channel MOSFET Package Dimensions TO-220F (Retractable) * Front/Back Side Isolation Voltage : AC 2500V Dimensions in Millimeters FCPF400N60 Rev. C2 8 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 FCPF400N60 Rev. C2 9 www.fairchildsemi.com FCPF400N60 N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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