Preliminary FDT1600N10ALZ N-Channel PowerTrench® MOSFET 100 V, 5.6 A, 160 mΩ Features Description RDS(on) = 121 mΩ at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. RDS(on) = 156 mΩ at VGS = 5 V, ID = 1.8 A Fast Switching Speed Low Gate Charge Applications High Performance Trench Technology for Extremely Low RDS(on) DC-DC converters Synchronous Rectification for Server/Telecom PSU High Power and Current Handling Capability Battery Charger RoHS Compliant AC Motor Drovers and Uninterruptible Power Supplies Off-line UPS D S D G SOT-223 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current IDM Drain Current EAS Single Pulse Avalanche Energy dv/dt Peak Diode Recovery dv/dt FDT1600N10ALZ 100 Units V ±20 V - Continuous (TC = 25 °C) 5.6 - Continuous (TC = 100 °C) 3.5 - Pulsed A (Note 2) 22.4 A (Note 3) 9.2 mJ 6.0 V/ns (TC = 25 °C) (Note 1a) 10.42 W - Derate above 25 °C (Note 1b) 0.083 °C PD Power Dissipation TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering Purpose, 1/8’’ from Case for 5 Seconds 300 °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case, Max RθJA Thermal Resistance, Junction to Ambient, Max (Note 1) 12 (Note 1a) 60 °C/W Package Marking and Ordering Information Device Marking 16010ALZ Device FDT1600N10ALZ ©2012 Fairchild Semiconductor Corporation FDT1600N10ALZ Rev. B0 Package SOT-223 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units www.fairchildsemi.com FDT1600N10ALZ N-Channel PowerTrench® MOSFET August 2012 Symbol Parameter Test Conditions Min Typ Max Units 100 - - V - 72 - mV/°C μA Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current VDS = 80 V, VGS = 0V - - 1 VDS = 80 V, TJ = 125 °C - - 500 VGS = ±20 V, VDS = 0 V - - ±10 VGS = VDS, ID = 250 μA μA On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain to Source On Resistance gFS Forward Transconductance 1.4 - 2.8 V VGS = 10 V, ID = 2.8 A - 121 160 mΩ VGS = 5 V, ID = 1.8 A - 156 375 mΩ VDS = 10 V, ID = 5.6 A - 10.7 - S VDS = 50 V, VGS = 0 V, f = 1MHz - 168 225 pF - 42 55 pF pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 2 3 Coss(er) Energy Related Output Capacitance VDS = 50 V, VGS = 0 V - 76 - pF Qg(tot) Total Gate Charge at 10V VGS = 10 V - 2.9 3.8 nC Qg(tot) Total Gate Charge at 5V VGS = 5 V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance(G-S) VDD = 50 V, ID = 5.6 A - 1.6 - nC - 0.7 - nC - 0.64 - nC f = 1MHz - 2.04 - Ω VDD = 50 V, ID = 5.6 A, VGS = 10 V, RGEN = 4.7 Ω - 7.4 24.8 ns - 2.5 15 ns - 13.5 37 ns - 2.4 14.8 ns (Note 5) Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time (Note 5) Drain-Source Diode Characteristics IS Maximum Continous Drain to Source Diode Forward Current - - 5.6 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 22.4 A VSD Source to Drain Diode Forward Voltage VGS = 0 V, ISD = 5.6A - - 1.3 V trr Reverse Recovery Time - 34.1 46 ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 5.6A, VDD = 50V, dIF/dt = 100A/μs - 32.7 20 nC NOTES: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 60 °C/W when mounted on a 1 in2 pad of 2 oz copper b) 118 °C/W when mounted on a minimum pad of 2 oz copper 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. Starting TJ = 25 °C, L = 3 mH, IAS = 2.47 A 4. ISD ≤ 5.6A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 5. Essentially Independent of Operating Temperature Typical Characteristics FDT1600N10ALZ Rev.B0 2 www.fairchildsemi.com FDT1600N10ALZ N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 30 20 o 150 C 10 10 1 *Notes: 1. 250μs Pulse Test o 2. TC = 25 C 0.1 0.1 ID, Drain Current[A] ID, Drain Current[A] o VGS = 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V -55 C o 25 C 1 *Notes: 1. VDS = 10V 2. 250μs Pulse Test 0.1 1 VDS, Drain-Source Voltage[V] 2 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3 4 5 6 7 8 VGS, Gate-Source Voltage[V] 9 10 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 20 500 IS, Reverse Drain Current [A] RDS(ON) [mΩ], Drain-Source On-Resistance 10 400 300 200 VGS = 10V 100 VGS = 20V o 150 C o 25 C 1 *Notes: 1. VGS = 0V 2. 250μs Pulse Test o *Note: TC = 25 C 0.1 0 0 4 8 12 ID, Drain Current [A] 16 0.4 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] 20 Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 10 Ciss 100 Capacitances [pF] VGS, Gate-Source Voltage [V] 300 Coss 10 1.4 *Note: 1. VGS = 0V 2. f = 1MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 0.1 FDT1600N10ALZ Rev.B0 8 VDS = 20V VDS = 50V VDS = 80V 6 4 2 *Note: ID = 5.6A Crss 0 1 10 VDS, Drain-Source Voltage [V] 0 100 3 0.5 1.0 1.5 2.0 2.5 3.0 Qg, Total Gate Charge [nC] 3.5 www.fairchildsemi.com FDT1600N10ALZ N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.1 1.08 1.04 1.00 0.96 *Notes: 1. VGS = 0V 2. ID = 250μA 0.92 -80 -40 0 40 80 120 o TJ, Junction Temperature [ C] RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.10 1.2 0.9 6 10 5 1ms Operation in This Area is Limited by R DS(on) 0.1 *Notes: o 1. TC = 25 C 10ms 100ms DC 1 10 VDS, Drain-Source Voltage [V] 160 VGS= 10V 4 3 2 VGS= 5V 1 o 2. TJ = 150 C 3. Single Pulse 0.01 0.1 -40 0 40 80 120 o TJ, Junction Temperature [ C] Figure 10. Maximum Drain Current 30 1 *Notes: 1. VGS = 10V 2. ID = 2.8A 0.6 ID, Drain Current [A] ID, Drain Current [A] 1.5 0.3 -80 160 Figure 9. Maximum Safe Operating Area vs. Case Temperature o RθJC= 12 C/W 0 25 100 Figure 11. Eoss vs. Drain to Source Voltage 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 12. Unclamped Inductive Switching Capability 3 IAS, Avalanche Current [A] 0.25 0.20 EOSS, [μJ] 1.8 0.15 0.10 2 o TJ = 125 C o TJ = 25 C 0.05 1 0.01 0 0 FDT1600N10ALZ Rev.B0 20 40 60 80 VDS, Drain to Source Voltage [V] 100 4 0.1 tAV, Time In Avalanche [ms] 1 www.fairchildsemi.com FDT1600N10ALZ N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDT1600N10ALZ N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) Figure 13. Transient Thermal Response Curve Thermal Response [ZθJA] 2 1 0.5 0.2 0.1 0.05 0.02 0.01 Single pulse t1 t2 *Notes: o 1. ZθJA(t) = 118 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.01 0.01 FDT1600N10ALZ Rev.B0 PDM 0.1 0.1 1 10 Rectangular Pulse Duration [sec] 5 100 1000 www.fairchildsemi.com FDT1600N10ALZ N-Channel PowerTrench® MOSFET Gate Charge Test Circuit & Waveform D G S Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDT1600N10ALZ Rev.B0 6 www.fairchildsemi.com FDT1600N10ALZ N-Channel PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FDT1600N10ALZ Rev.B0 7 www.fairchildsemi.com 3.00 ±0.10 4.60 ±0.25 6.50 ±0.20 FDT1600N10ALZ Rev.B0 (0.89) (0.95) (0.46) 1.60 ±0.20 2.30 TYP 0.70 ±0.10 (0.95) 8 7.00 ±0.30 (0.60) +0.04 0.06 –0.02 (0.60) 3.50 ±0.20 1.75 ±0.20 MAX1.80 0.65 ±0.20 0.08MAX SOT-223 ° 10 0.25 +0.10 –0.05 0°~ www.fairchildsemi.com FDT1600N10ALZ N-Channel PowerTrench® MOSFET Mechanical Dimensions tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 FDT1600N10ALZ Rev.B0 9 www.fairchildsemi.com FDT1600N10ALZ N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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