BD249C NPN High−Power Transistor NPN high−power transistors are for general−purpose power amplifier and switching applications. Features • ESD Ratings: • • Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V−0 @ 0.125 Pb−Free Package is Available* http://onsemi.com 25 AMP, 100 VOLT, 125 WATT NPN SILICON POWER TRANSISTOR MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 100 Vdc Collector − Base Voltage VCBO 100 Vdc Emitter − Base Voltage VEBO 5.0 Vdc 25 40 Adc Apk Collector Current − Continuous Peak (Note 1) IC Base Current − Continuous IB 5.0 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 125 1.0 W W/°C TJ, Tstg – 65 to +150 °C ESB 90 mJ Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.0 °C/W Thermal Resistance, Junction−to−Ambient RqJA 35.7 °C/W Operating and Storage Junction Temperature Range Unclamped Inductive Load TO−218 CASE 340D STYLE 1 1 2 3 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic AYWWG BD249C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. BD249C A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device BD249C BD249CG Package Shipping TO−218 30 Units/Rail TO−218 (Pb−Free) 30 Units/Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 2 1 Publication Order Number: BD249C/D BD249C ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Symbol Min Max Unit VCEO(sus) 100 − V Collector−Emitter Cutoff Current (VCE = 60 V, IB = 0) ICEO − 1.0 mA Collector−Emitter Cutoff Current (VCE = Rated VCEO, VEB = 0) ICES − 0.7 mA Emitter−Base Cutoff Current (VEB = 5.0 V, IC = 0) IEBO − 1.0 mA 25 10 5.0 − − − − − 1.8 4.0 − − 2.0 4.0 Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) (IC = 30 mA, IB = 0) ON CHARACTERISTICS (Note 1) hFE DC Current Gain (IC = 1.5 A, VCE = 4.0 V) (IC = 15 A, VCE = 4.0 V) (IC = 25 A, VCE = 4.0 V) Collector−Emitter Saturation Voltage (IC = 15 A, IB = 1.5 A) (IC = 25 A, IB = 5.0 A) VCE(sat) Base−Emitter On Voltage (IC = 15 A, VCE = 4.0 V) (IC = 25 A, VCE = 4.0 V) VBE(on) − V V DYNAMIC CHARACTERISTICS Small−Signal Current Gain (IC = 1.0 A, VCE = 10 V, f = 1.0 kHz) hfe 25 − − Current−Gain — Bandwidth Product (IC = 1.0 A, VCE = 10 V, f = 1.0 MHz) fT 3.0 − MHz 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. PD, POWER DISSIPATION (WATTS) 125 100 75 50 25 0 0 25 50 75 125 100 TC, CASE TEMPERATURE (°C) Figure 1. Power Derating http://onsemi.com 2 150 175 BD249C VCC TURN−ON TIME RL +2.0 V 0 −30 V 3.0 TO SCOPE tr ≤ 20 ns 10 RB −11.0 V tr ≤ 20 ns 2.0 10 TO 100 mS DUTY CYCLE ≈ 2.0% RL +9.0 V 3.0 TO SCOPE tr ≤ 20 ns 10 RB −11.0 V 0.7 0.5 −30 V t, TIME (s) μ VCC TURN−OFF TIME 0 VBB tr 0.3 0.2 0.07 0.05 +4.0 V 0.03 0.02 0.3 FOR CURVES OF FIGURES 3 & 4, RB & RL ARE VARIED. INPUT LEVELS ARE APPROXIMATELY AS SHOWN. FOR NPN, REVERSE ALL POLARITIES. 0.5 0.7 1.0 5.0 7.0 10 2.0 3.0 IC, COLLECTOR CURRENT (AMPERES) Figure 2. Switching Time Equivalent Test Circuits t, TIME (s) μ ts 2.0 0.1 0.3 0.5 0.7 500 200 TJ = 25°C VCC = 30 V IC/IB = 10 IB1 = IB2 ts 1.0 0.7 0.5 0.2 30 1000 (PNP) (NPN) 3.0 0.3 20 Figure 3. Turn−On Time hFE , DC CURRENT GAIN 10 7.0 5.0 (PNP) (NPN) td 0.1 tr ≤ 20 ns 10 to 100 ms DUTY CYCLE ≈ 2.0% TJ = 25°C IC/IB = 10 VCC = 30 V VBE(off) = 2 V 1.0 tf tf VCE = 4.0 V TJ = 25°C 100 50 20 10 PNP NPN 5.0 2.0 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMPERES) 20 1.0 30 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (AMPS) Figure 5. DC Current Gain Figure 4. Turn−Off Time http://onsemi.com 3 50 100 BD249C FORWARD BIAS 100 IC, COLLECTOR CURRENT (AMPS) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC w 25_C. Second breakdown limitations do not derate the same as thermal limitations. 300ms 50 30 20 10 10ms 5.0 2.0 dc SECONDARY BREAKDOWN THERMAL LIMIT BONDING WIRE LIMIT 1.0 0.5 0.3 0.2 0 REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn−off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage−current conditions during reverse biased turn−off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 7 gives RBSOA characteristics. TC = 25°C 1.0ms 1.0 20 30 50 70 100 2.0 3.0 5.0 7.0 10 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 6. Maximum Rated Forward Bias Safe Operating Area IC, COLLECTOR CURRENT (AMPS) 40 30 TJ ≤ 100°C 25 20 15 10 5.0 0 0 10 40 60 80 20 30 50 70 90 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 7. Maximum Rated Forward Bias Safe Operating Area http://onsemi.com 4 100 BD249C TEST CIRCUIT VCE MONITOR RBB1 MJE180 INPUT L1 (SEE NOTE A) TUT 20 L2 (SEE NOTE A) 50 RBB2 = 100 50 − VCC = 10 V + IC MONITOR VBB2 = 0 − RS = 0.1 W VBB1 = 10 V + VOLTAGE AND CURRENT WAVEFORMS tw = 6.0 ms (SEE NOTE B) 5.0 V INPUT VOLTAGE 0 100 ms COLLECTOR CURRENT 0 −3.0 A 0 −10 V COLLECTOR VOLTAGE V(BR)CER NOTES: A. L1 and L2 are 10 mH, 0.11 W, Chicago Standard Transformer Corporation C−2688, or equivalent. B. Input pulse width is increased until ICM = − 3.0 A. C. For NPN, reverse all polarities. Figure 8. Inductive Load Switching http://onsemi.com 5 BD249C PACKAGE DIMENSIONS TO−218 CASE 340D−02 ISSUE E C Q B U S E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 4 DIM A B C D E G H J K L Q S U V A L 1 K 2 3 D J H V MILLIMETERS MIN MAX −−− 20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF −−− 16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF STYLE 1: PIN 1. 2. 3. 4. G INCHES MIN MAX −−− 0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF −−− 0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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