2N5190, 2N5191, 2N5192 Silicon NPN Power Transistors Silicon NPN power transistors are for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. http://onsemi.com Features • ESD Ratings: Machine Model, C; > 400 V 4.0 AMPERES NPN SILICON POWER TRANSISTORS 40, 60, 80 VOLTS − 40 WATTS Human Body Model, 3B; > 8000 V • Epoxy Meets UL 94 V−0 @ 0.125 in. • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage 2N5190 2N5191 2N5192 VCEO 40 60 80 Vdc Collector−Base Voltage 2N5190 2N5191 2N5192 VCBO 40 60 80 Vdc VEBO 5.0 Vdc Collector Current IC 4.0 Adc Base Current IB 1.0 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 40 320 W mW/°C TJ, Tstg –65 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 3.12 °C/W Emitter−Base Voltage Operating and Storage Junction Temperature Range TO−225AA CASE 77 STYLE 1 3 2 1 MARKING DIAGRAM YWW 2 N519xG THERMAL CHARACTERISTICS Y = Year WW = Work Week 2N519x = Device Code x = 0, 1, or 2 G = Pb−Free Package Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ORDERING INFORMATION Package Shipping† 2N5190 TO−225AA 500 Units/Box 2N5190G TO−225AA (Pb−Free) 500 Units/Box 2N5191 TO−225AA 500 Units/Box 2N5191G TO−225AA (Pb−Free) 500 Units/Box 2N5192 TO−225AA 500 Units/Box 2N5192G TO−225AA (Pb−Free) 500 Units/Box Device *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 12 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: 2N5191/D 2N5190, 2N5191, 2N5192 ELECTRICAL CHARACTERISTICS* (TC = 25_C unless otherwise noted) Symbol Characteristic Min Max Unit 40 60 80 − − − Vdc − − − 1.0 1.0 1.0 mAdc − − − − − − 0.1 0.1 0.1 2.0 2.0 2.0 mAdc − − − 0.1 0.1 0.1 mAdc − 1.0 mAdc 25 20 10 7.0 100 80 − − − − 0.6 1.4 Vdc OFF CHARACTERISTICS VCEO(sus) Collector−Emitter Sustaining Voltage (Note 1) (IC = 0.1 Adc, IB = 0) 2N5190 2N5191 2N5192 Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) (VCE = 80 Vdc, IB = 0) 2N5190 2N5191 2N5192 ICEO Collector Cutoff Current (VCE = 40 Vdc, VEB(off) = 1.5 Vdc) (VCE = 60 Vdc, VEB(off) = 1.5 Vdc) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc) (VCE = 40 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) (VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) 2N5190 2N5191 2N5192 2N5190 2N5191 2N5192 Collector Cutoff Current (VCB = 40 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) 2N5190 2N5191 2N5192 ICEX ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO ON CHARACTERISTICS (Note 1) hFE DC Current Gain (IC = 1.5 Adc, VCE = 2.0 Vdc) 2N5190/2N5191 2N5192 2N5190/2N5191 2N5192 (IC = 4.0 Adc, VCE = 2.0 Vdc) − Collector−Emitter Saturation Voltage (IC = 1.5 Adc, IB = 0.15 Adc) (IC = 4.0 Adc, IB = 1.0 Adc) VCE(sat) Base−Emitter On Voltage (IC = 1.5 Adc, VCE = 2.0 Vdc) VBE(on) − 1.2 Vdc fT 2.0 − MHz DYNAMIC CHARACTERISTICS Current−Gain — Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) *JEDEC Registered Data. 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. http://onsemi.com 2 hFE , DC CURRENT GAIN (NORMALIZED) 2N5190, 2N5191, 2N5192 10 7.0 5.0 TJ = 150°C VCE = 2.0 V VCE = 10 V 3.0 2.0 1.0 0.7 0.5 −55 °C 25°C 0.3 0.2 0.1 0.004 0.007 0.01 0.02 0.03 0.05 0.1 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 0.5 2.0 1.0 3.0 4.0 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 2.0 TJ = 25°C 1.6 1.2 IC = 10 mA 100 mA 1.0 A 3.0 A 0.8 0.4 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 50 70 100 200 300 500 Figure 2. Collector Saturation Region θV, TEMPERATURE COEFFICIENTS (mV/°C) 2.0 TJ = 25°C 1.6 1.2 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V 0.4 VCE(sat) @ IC/IB = 10 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 +2.5 +2.0 +1.5 hFE@VCE + 2.0V 2 TJ = −65°C to +150°C *APPLIES FOR IC/IB ≤ +1.0 +0.5 *qV for VCE(sat) 0 −0.5 −1.0 −1.5 qV for VBE −2.0 −2.5 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 3. “On” Voltages Figure 4. Temperature Coefficients http://onsemi.com 3 2.0 3.0 4.0 RBE , EXTERNAL BASE−EMITTER RESISTANCE (OHM 2N5190, 2N5191, 2N5192 103 VCE = 30 V 102 TJ = 150°C 101 100 100°C 10−1 REVERSE 10− 2 25°C ICES −0.2 −0.1 0 +0.4 +0.5 +0.6 106 IC ≈ ICES 105 IC = 2 x ICES 104 103 (TYPICAL ICES VALUES OBTAINED FROM FIGURE 5) 102 20 40 80 100 120 140 160 Figure 5. Collector Cut−Off Region Figure 6. Effects of Base−Emitter Resistance 300 VCC RC Vin TJ = +25°C 200 SCOPE RB Cjd<<Ceb t1 −4.0 V t3 RB and RC varied to obtain desired current levels t1 ≤ 7.0 ns 100 < t2 < 500 ms t3 < 15 ns Vin t2 TURN−OFF PULSE 100 Ceb 70 50 DUTY CYCLE ≈ 2.0% APPROX −9.0 V 30 Ccb 0.1 0.2 0.3 0.5 2.0 IC/IB = 10 TJ = 25°C 1.0 20 30 40 10 0.7 0.5 t, TIME (s) μ tr @ VCC = 10 V tf @ VCC = 30 V 0.3 0.2 0.1 0.07 0.05 td @ VEB(off) = 2.0 V 0.5 0.7 1.0 0.2 0.3 IC, COLLECTOR CURRENT (AMP) ts′ 1.0 tr @ VCC = 30 V 0.03 0.02 0.05 0.07 0.1 2.0 3.0 5.0 Figure 8. Capacitance 2.0 0.1 0.07 0.05 1.0 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Switching Time Equivalent Test Circuit 0.3 0.2 60 TJ, JUNCTION TEMPERATURE (°C) APPROX +11 V 0.7 0.5 VCE = 30 V IC = 10 x ICES VBE, BASE−EMITTER VOLTAGE (VOLTS) TURN−ON PULSE APPROX +11 V Vin 0 VEB(off) +0.1 +0.2 +0.3 CAPACITANCE (pF) 10− 3 −0.4 −0.3 FORWARD 107 2.0 0.03 0.02 0.05 0.07 0.1 3.0 4.0 Figure 9. Turn−On Time tf @ VCC = 10 V IB1 = IB2 IC/IB = 10 ts′ = ts − 1/8 tf TJ = 25°C 0.5 0.7 1.0 0.2 0.3 IC, COLLECTOR CURRENT (AMP) Figure 10. Turn−Off Time http://onsemi.com 4 2.0 3.0 4.0 2N5190, 2N5191, 2N5192 10 IC, COLLECTOR CURRENT (AMP) 5.0ms 5.0 There are two limitations on the power handling ability of a transistor; average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 11 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100ms 1.0ms TJ = 150°C 2.0 dc 1.0 SECONDARY BREAKDOWN LIMIT THERMAL LIMIT AT TC = 25°C BONDING WIRE LIMIT CURVES APPLY BELOW RATED VCEO 2N5191 0.5 0.2 0.1 1.0 2N5192 2.0 5.0 10 20 50 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 100 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 11. Rating and Thermal Data Active−Region Safe Operating Area 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.1 0.07 0.05 qJC(max) = 3.12°C/W 2N5190−92 0.2 0.1 0.05 0.02 0.01 0.03 SINGLE PULSE 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 50 100 200 500 1000 Figure 12. Thermal Response DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA A train of periodical power pulses can be represented by the model shown in Figure A. Using the model and the device thermal response, the normalized effective transient thermal resistance of Figure 12 was calculated for various duty cycles. To find qJC(t), multiply the value obtained from Figure 12 by the steady state value qJC. Example: The 2N5190 is dissipating 50 watts under the following conditions: t1 = 0.1 ms, tp = 0.5 ms. (D = 0.2). Using Figure 12, at a pulse width of 0.1 ms and D = 0.2, the reading of r(t1, D) is 0.27. The peak rise in function temperature is therefore: tP PP PP t1 1/f t1 tP PEAK PULSE POWER = PP DUTY CYCLE, D = t1 f − Figure A DT = r(t) x PP x qJC = 0.27 x 50 x 3.12 = 42.2_C http://onsemi.com 5 2N5190, 2N5191, 2N5192 PACKAGE DIMENSIONS TO−225AA CASE 77−09 ISSUE Z −B− U F Q −A− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077−01 THRU −08 OBSOLETE, NEW STANDARD 077−09. C M 1 2 3 H DIM A B C D F G H J K M Q R S U V K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 −−− MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 −−− STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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