ONSEMI MJE4353

ON Semiconductort
NPN
MJE4343
High−Voltage High Power
Transistors
PNP
MJE4353
. . . designed for use in high power audio amplifier applications and
high voltage switching regulator circuits.
• High Collector−Emitter Sustaining Voltage —
•
•
w
16 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
160 VOLTS
NPN
PNP
VCEO(sus) = 160 Vdc — MJE4343 MJE4353
High DC Current Gain — @ IC = 8.0 Adc hFE = 35 (Typ)
Low Collector−Emitter Saturation Voltage —
VCE(sat) = 2.0 Vdc (Max) @ IC
= 8.0 Adc
These devices are available in Pb−free package(s). Specifications herein
apply to both standard and Pb−free devices. Please see our website at
www.onsemi.com for specific Pb−free orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
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MAXIMUM RATINGS
Rating
Symbol
Max
Unit
VCEO
160
Vdc
Collector−Base Voltage
VCB
160
Vdc
Emitter−Base Voltage
VEB
7.0
Vdc
Collector Current — Continuous
Peak (1)
IC
16
20
Adc
Base Current — Continuous
IB
5.0
Adc
Collector−Emitter Voltage
PD
125
Watts
TJ, Tstg
– 65 to + 150
_C
Symbol
Max
Unit
RθJC
1.0
_C/W
Total Power Dissipation @ TC = 25_C
Operating and Storage Junction
Temperature Range
CASE 340D−02
TO−218 TYPE
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
PD, POWER DISSIPATION (WATTS)
(1) Pulse Test: Pulse Width v 5.0 μs, Duty Cycle w 10%.
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Power Derating
Reference: Ambient Temperature
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 4
1
Publication Order Number:
MJE4343/D
MJE4343 MJE4353
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
160
—
—
750
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (1)
(IC = 200 mAdc, IB = 0)
VCEO(sus)
Vdc
Collector−Emitter Cutoff Current
(VCE = 80 Vdc, IB = 0)
ICEO
Collector−Emitter Cutoff Current
(VCE = Rated VCB, VEB(off) = 1.5 Vdc)
(VCE = Rated VCB, VEB(off) = 1.5 Vdc, TC = 150_C)
ICEX
—
—
1.0
5.0
mAdc
Collector−Base Cutoff Current
(VCB = Rated VCB, IE = 0)
ICBO
—
750
μAdc
Emitter−Base Cutoff Current
(VBE = 7.0 Vdc, IC = 0)
IEBO
—
1.0
mAdc
15
8.0
35 (Typ)
15 (Typ)
—
—
2.0
3.5
μAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 8.0 Adc, VCE = 2.0 Vdc)
(IC = 16 Adc, VCE = 4.0 Vdc)
hFE
—
Collector−Emitter Saturation Voltage
(IC = 8.0 Adc, IB = 800 mA)
(IC = 16 Adc, IB = 2.0 Adc)
VCE(sat)
Vdc
Base−Emitter Saturation Voltage
(IC = 16 Adc, IB = 2.0 Adc)
VBE(sat)
—
3.9
Vdc
Base−Emitter On Voltage
(IC = 16 Adc, VCE = 4.0 Vdc)
VBE(on)
—
3.9
Vdc
fT
1.0
—
MHz
Cob
—
800
pF
DYNAMIC CHARACTERISTICS
Current−Gain — Bandwidth Product (2)
(IC = 1.0 Adc, VCE = 20 Vdc, ftest = 0.5 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
(1) Pulse Test: Pulse Width v 300 μs, Duty Cycle w 2.0%.
(2) fT = ⎪hfe⎪• ftest.
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2
MJE4343 MJE4353
VCC
+30 V
3.0
2.0
RC
25 μs
+11 V
t, TIME (s)
μ
0
D1
51
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
1.0
0.7
0.5
SCOPE
RB
−9.0 V
TJ = 25°C
IC/IB = 10
VCE = 30 V
tr
0.3
0.2
−4 V
0.1
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
td @ VBE(off) = 5.0 V
0.07
0.05
0.03
0.2 0.3
Note: Reverse polarities to test PNP devices.
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
20
Figure 3. Typical Turn−On Time
Figure 2. Switching Times Test Circuit
TYPICAL CHARACTERISTICS
5.0
2.0
ts
TJ = 25°C
1.6
V, VOLTAGE (VOLTS)
t, TIME (s)
μ
3.0
TJ = 25°C
IC/IB = 10
IB1 = IB2
VCE = 30 V
2.0
1.0
tf
0.7
1.2
VBE(sat) @ IC/IB = 10
0.8
VBE @ VCE = 2.0 V
0.4
VCE(sat) @ IC/IB = 10
0.5
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
IC, COLLECTOR CURRENT (AMP)
10
0
20
0.2 0.3
Figure 4. Turn−Off Time
0.5 0.7 1.0
2.0 3.0
5.0 7.0
IC, COLLECTOR CURRENT (AMP)
Figure 5. On Voltages
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3
10
20
MJE4343 MJE4353
DC CURRENT GAIN
1000
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
1000
100
VCE = 2 V
50
TJ = 150°C
25°C
−55 °C
20
10
100
VVCE
CE==22VV
TTJJ==150°C
150°C
25°C
25°C
−−5555°C
°C
10
0.2
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (AMPS)
10
0.2
20
0.5
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 6. MJE4340 Series (NPN)
1.0
2.0
5.0
IC, COLLECTOR CURRENT (AMPS)
10
20
Figure 7. MJE4350 Series (PNP)
2.0
TJ = 25°C
1.6
IC = 4.0 A
8.0 A
16 A
1.2
0.8
0.4
0
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
IB, BASE CURRENT (AMP)
2.0 3.0
5.0
Figure 8. Collector Saturation Region
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1.0
D = 0.5
0.5
0.2
0.2
0.1
0.1
0.05
0.02
0.01
0.02
0.01
0.02
SINGLE
PULSE
0.05
0.1
P(pk)
θJC(t) = r(t) θJC
θJC = 1.0°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) θJC(t)
0.05
0.2
0.5
1.0
2.0
5.0
10
t, TIME (ms)
20
Figure 9. Thermal Response
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4
50
t1
t2
DUTY CYCLE, D = t1/t2
100
200
500
1000
2000
MJE4343 MJE4353
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 10 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC ≥ 25_C. Second breakdown limitations do
not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 10 may be found at
any case temperature by using the appropriate curve on
Figure 9.
100
IC, COLLECTOR CURRENT (AMP)
50
20
5.0ms
10
dc
5.0
2.0
1.0
0.5
0.2
0.1
3.0
SECONDARY BREAKDOWN LIMITED
THERMAL LIMIT TC = 25°C
BONDING WIRE LIMITED
50 70 100 150 200
5.0 7.0
10
20 30
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 10. Maximum Forward Bias Safe
Operating Area
IC, COLLECTOR CURRENT (AMPS)
20
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn−off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage−current conditions during
reverse biased turn−off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 11 gives RBSOA characteristics.
16
TJ = 100°C
VBE(off) ≤ 5 V
12
8.0
4.0
20
40
60
80 100 120 140 160 180
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 11. Maximum Reverse Bias Safe
Operating Area
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5
MJE4343 MJE4353
PACKAGE DIMENSIONS
CASE 340D−02
ISSUE E
C
Q
B
U
S
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
4
DIM
A
B
C
D
E
G
H
J
K
L
Q
S
U
V
A
L
1
K
2
3
D
J
H
V
MILLIMETERS
MIN
MAX
−−−
20.35
14.70
15.20
4.70
4.90
1.10
1.30
1.17
1.37
5.40
5.55
2.00
3.00
0.50
0.78
31.00 REF
−−−
16.20
4.00
4.10
17.80
18.20
4.00 REF
1.75 REF
STYLE 1:
PIN 1.
2.
3.
4.
G
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6
BASE
COLLECTOR
EMITTER
COLLECTOR
INCHES
MIN
MAX
−−−
0.801
0.579
0.598
0.185
0.193
0.043
0.051
0.046
0.054
0.213
0.219
0.079
0.118
0.020
0.031
1.220 REF
−−−
0.638
0.158
0.161
0.701
0.717
0.157 REF
0.069
MJE4343 MJE4353
Notes
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MJE4343/D