ON Semiconductort NPN MJE4343 High−Voltage High Power Transistors PNP MJE4353 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector−Emitter Sustaining Voltage — • • w 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 160 VOLTS NPN PNP VCEO(sus) = 160 Vdc — MJE4343 MJE4353 High DC Current Gain — @ IC = 8.0 Adc hFE = 35 (Typ) Low Collector−Emitter Saturation Voltage — VCE(sat) = 2.0 Vdc (Max) @ IC = 8.0 Adc These devices are available in Pb−free package(s). Specifications herein apply to both standard and Pb−free devices. Please see our website at www.onsemi.com for specific Pb−free orderable part numbers, or contact your local ON Semiconductor sales office or representative. ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Rating Symbol Max Unit VCEO 160 Vdc Collector−Base Voltage VCB 160 Vdc Emitter−Base Voltage VEB 7.0 Vdc Collector Current — Continuous Peak (1) IC 16 20 Adc Base Current — Continuous IB 5.0 Adc Collector−Emitter Voltage PD 125 Watts TJ, Tstg – 65 to + 150 _C Symbol Max Unit RθJC 1.0 _C/W Total Power Dissipation @ TC = 25_C Operating and Storage Junction Temperature Range CASE 340D−02 TO−218 TYPE THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case PD, POWER DISSIPATION (WATTS) (1) Pulse Test: Pulse Width v 5.0 μs, Duty Cycle w 10%. 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 1. Power Derating Reference: Ambient Temperature © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 4 1 Publication Order Number: MJE4343/D MJE4343 MJE4353 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 160 — — 750 Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0) VCEO(sus) Vdc Collector−Emitter Cutoff Current (VCE = 80 Vdc, IB = 0) ICEO Collector−Emitter Cutoff Current (VCE = Rated VCB, VEB(off) = 1.5 Vdc) (VCE = Rated VCB, VEB(off) = 1.5 Vdc, TC = 150_C) ICEX — — 1.0 5.0 mAdc Collector−Base Cutoff Current (VCB = Rated VCB, IE = 0) ICBO — 750 μAdc Emitter−Base Cutoff Current (VBE = 7.0 Vdc, IC = 0) IEBO — 1.0 mAdc 15 8.0 35 (Typ) 15 (Typ) — — 2.0 3.5 μAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 8.0 Adc, VCE = 2.0 Vdc) (IC = 16 Adc, VCE = 4.0 Vdc) hFE — Collector−Emitter Saturation Voltage (IC = 8.0 Adc, IB = 800 mA) (IC = 16 Adc, IB = 2.0 Adc) VCE(sat) Vdc Base−Emitter Saturation Voltage (IC = 16 Adc, IB = 2.0 Adc) VBE(sat) — 3.9 Vdc Base−Emitter On Voltage (IC = 16 Adc, VCE = 4.0 Vdc) VBE(on) — 3.9 Vdc fT 1.0 — MHz Cob — 800 pF DYNAMIC CHARACTERISTICS Current−Gain — Bandwidth Product (2) (IC = 1.0 Adc, VCE = 20 Vdc, ftest = 0.5 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) (1) Pulse Test: Pulse Width v 300 μs, Duty Cycle w 2.0%. (2) fT = ⎪hfe⎪• ftest. http://onsemi.com 2 MJE4343 MJE4353 VCC +30 V 3.0 2.0 RC 25 μs +11 V t, TIME (s) μ 0 D1 51 tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 1.0 0.7 0.5 SCOPE RB −9.0 V TJ = 25°C IC/IB = 10 VCE = 30 V tr 0.3 0.2 −4 V 0.1 RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA td @ VBE(off) = 5.0 V 0.07 0.05 0.03 0.2 0.3 Note: Reverse polarities to test PNP devices. 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 20 Figure 3. Typical Turn−On Time Figure 2. Switching Times Test Circuit TYPICAL CHARACTERISTICS 5.0 2.0 ts TJ = 25°C 1.6 V, VOLTAGE (VOLTS) t, TIME (s) μ 3.0 TJ = 25°C IC/IB = 10 IB1 = IB2 VCE = 30 V 2.0 1.0 tf 0.7 1.2 VBE(sat) @ IC/IB = 10 0.8 VBE @ VCE = 2.0 V 0.4 VCE(sat) @ IC/IB = 10 0.5 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMP) 10 0 20 0.2 0.3 Figure 4. Turn−Off Time 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMP) Figure 5. On Voltages http://onsemi.com 3 10 20 MJE4343 MJE4353 DC CURRENT GAIN 1000 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 1000 100 VCE = 2 V 50 TJ = 150°C 25°C −55 °C 20 10 100 VVCE CE==22VV TTJJ==150°C 150°C 25°C 25°C −−5555°C °C 10 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMPS) 10 0.2 20 0.5 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 6. MJE4340 Series (NPN) 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMPS) 10 20 Figure 7. MJE4350 Series (PNP) 2.0 TJ = 25°C 1.6 IC = 4.0 A 8.0 A 16 A 1.2 0.8 0.4 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (AMP) 2.0 3.0 5.0 Figure 8. Collector Saturation Region r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 D = 0.5 0.5 0.2 0.2 0.1 0.1 0.05 0.02 0.01 0.02 0.01 0.02 SINGLE PULSE 0.05 0.1 P(pk) θJC(t) = r(t) θJC θJC = 1.0°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) θJC(t) 0.05 0.2 0.5 1.0 2.0 5.0 10 t, TIME (ms) 20 Figure 9. Thermal Response http://onsemi.com 4 50 t1 t2 DUTY CYCLE, D = t1/t2 100 200 500 1000 2000 MJE4343 MJE4353 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 10 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 10 may be found at any case temperature by using the appropriate curve on Figure 9. 100 IC, COLLECTOR CURRENT (AMP) 50 20 5.0ms 10 dc 5.0 2.0 1.0 0.5 0.2 0.1 3.0 SECONDARY BREAKDOWN LIMITED THERMAL LIMIT TC = 25°C BONDING WIRE LIMITED 50 70 100 150 200 5.0 7.0 10 20 30 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 10. Maximum Forward Bias Safe Operating Area IC, COLLECTOR CURRENT (AMPS) 20 REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn−off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage−current conditions during reverse biased turn−off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 11 gives RBSOA characteristics. 16 TJ = 100°C VBE(off) ≤ 5 V 12 8.0 4.0 20 40 60 80 100 120 140 160 180 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 11. Maximum Reverse Bias Safe Operating Area http://onsemi.com 5 MJE4343 MJE4353 PACKAGE DIMENSIONS CASE 340D−02 ISSUE E C Q B U S E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 4 DIM A B C D E G H J K L Q S U V A L 1 K 2 3 D J H V MILLIMETERS MIN MAX −−− 20.35 14.70 15.20 4.70 4.90 1.10 1.30 1.17 1.37 5.40 5.55 2.00 3.00 0.50 0.78 31.00 REF −−− 16.20 4.00 4.10 17.80 18.20 4.00 REF 1.75 REF STYLE 1: PIN 1. 2. 3. 4. G http://onsemi.com 6 BASE COLLECTOR EMITTER COLLECTOR INCHES MIN MAX −−− 0.801 0.579 0.598 0.185 0.193 0.043 0.051 0.046 0.054 0.213 0.219 0.079 0.118 0.020 0.031 1.220 REF −−− 0.638 0.158 0.161 0.701 0.717 0.157 REF 0.069 MJE4343 MJE4353 Notes ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 7 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MJE4343/D