ONSEMI 2N5191G

2N5190G, 2N5191G,
2N5192G
Silicon NPN Power
Transistors
Silicon NPN power transistors are for use in power amplifier and
switching circuits, − excellent safe area limits. Complement to PNP
2N5194, 2N5195.
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4.0 AMPERES
NPN SILICON
POWER TRANSISTORS
40, 60, 80 VOLTS − 40 WATTS
Features
• Epoxy Meets UL 94 V−0 @ 0.125 in.
• These Devices are Pb−Free and are RoHS Compliant*
COLLECTOR
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
2N5190G
2N5191G
2N5192G
VCEO
Collector−Base Voltage
2N5190G
2N5191G
2N5192G
VCBO
Emitter−Base Voltage
VEBO
5.0
Vdc
Collector Current
IC
4.0
Adc
Base Current
IB
1.0
Adc
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
40
320
W
mW/°C
TJ, Tstg
–65 to +150
°C
ESD − Human Body Model
HBM
3B
V
ESD − Machine Model
MM
C
V
Operating and Storage Junction
Temperature Range
Vdc
3
BASE
40
60
80
1
EMITTER
Vdc
40
60
80
TO−225
CASE 77
STYLE 1
1 2
3
MARKING DIAGRAM
YWW
2
N519xG
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Y
= Year
WW
= Work Week
2N519x = Device Code
x = 0, 1, or 2
G
= Pb−Free Package
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
Max
Unit
RqJC
3.12
°C/W
ORDERING INFORMATION
Device
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
October, 2013 − Rev. 14
1
Package
Shipping
2N5190G
TO−225
(Pb−Free)
500 Units/Box
2N5191G
TO−225
(Pb−Free)
500 Units/Box
2N5192G
TO−225
(Pb−Free)
500 Units/Box
Publication Order Number:
2N5191/D
2N5190G, 2N5191G, 2N5192G
ELECTRICAL CHARACTERISTICS* (TC = 25_C unless otherwise noted)
Symbol
Characteristic
Min
Max
Unit
OFF CHARACTERISTICS
VCEO(sus)
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 0.1 Adc, IB = 0)
2N5190G
2N5191G
2N5192G
Vdc
40
60
80
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
2N5190G
(VCE = 60 Vdc, IB = 0)
2N5191G
(VCE = 80 Vdc, IB = 0)
2N5192G
ICEO
Collector Cutoff Current
(VCE = 40 Vdc, VEB(off) = 1.5 Vdc)
2N5190G
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)
2N5191G
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc)
2N5192G
(VCE = 40 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
2N5190G
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
2N5191G
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
2N5192G
ICEX
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
2N5190G
(VCB = 60 Vdc, IE = 0)
2N5191G
(VCB = 80 Vdc, IE = 0)
2N5192G
ICBO
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
−
−
−
mAdc
−
1.0
−
1.0
−
1.0
mAdc
−
0.1
−
0.1
−
0.1
−
2.0
−
2.0
−
2.0
mAdc
−
0.1
−
0.1
−
0.1
−
1.0
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 1.5 Adc, VCE = 2.0 Vdc)
2N5190G/2N5191G
2N5192G
(IC = 4.0 Adc, VCE = 2.0 Vdc)
2N5190G/2N5191G
2N5192G
hFE
Collector−Emitter Saturation Voltage
(IC = 1.5 Adc, IB = 0.15 Adc)
(IC = 4.0 Adc, IB = 1.0 Adc)
VCE(sat)
Base−Emitter On Voltage
(IC = 1.5 Adc, VCE = 2.0 Vdc)
VBE(on)
−
25
20
100
80
10
7.0
−
−
−
−
0.6
1.4
−
1.2
2.0
−
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
fT
*JEDEC Registered Data.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
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2
MHz
hFE, DC CURRENT GAIN (NORMALIZED)
2N5190G, 2N5191G, 2N5192G
10
7.0
5.0
TJ = 150°C
VCE = 2.0 V
VCE = 10 V
3.0
2.0
1.0
0.7
0.5
-55°C
25°C
0.3
0.2
0.1
0.004
0.007
0.01
0.02
0.03
0.05
0.1
0.2
0.3
IC, COLLECTOR CURRENT (AMP)
0.5
1.0
2.0
3.0
4.0
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
2.0
TJ = 25°C
1.6
1.2
IC = 10 mA
100 mA
1.0 A
3.0 A
0.8
0.4
0
0.05 0.07 0.1
0.2
0.3
0.5
0.7
1.0
2.0
5.0 7.0 10
3.0
IB, BASE CURRENT (mA)
20
30
50
70
100
200
300
500
Figure 2. Collector Saturation Region
θV, TEMPERATURE COEFFICIENTS (mV/°C)
2.0
TJ = 25°C
1.6
1.2
0.8
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
0.4
VCE(sat) @ IC/IB = 10
0
0.005 0.01 0.02 0.03 0.05
0.1
0.2 0.3 0.5
1.0
2.0 3.0 4.0
+2.5
+2.0
hFE@VCE + 2.0V
2
TJ = -65°C to +150°C
*APPLIES FOR IC/IB ≤
+1.5
+1.0
+0.5
*qV for VCE(sat)
0
-0.5
-1.0
-1.5
qV for VBE
-2.0
-2.5
0.005
0.01 0.02 0.03 0.05
0.1
0.2 0.3 0.5
1.0
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 3. “On” Voltages
Figure 4. Temperature Coefficients
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3
2.0 3.0 4.0
RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS)
2N5190G, 2N5191G, 2N5192G
103
VCE = 30 V
102
TJ = 150°C
101
100
100°C
10-1
REVERSE
10-2
25°C
FORWARD
ICES
10-3
-0.4 -0.3 -0.2 -0.1
0
+0.4 +0.5
+0.6
VCE = 30 V
IC = 10 x ICES
106
IC ≈ ICES
105
IC = 2 x ICES
104
103
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 5)
102
20
40
60
80
100
120
140
160
VBE, BASE-EMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Collector Cut−Off Region
Figure 6. Effects of Base−Emitter Resistance
300
VCC
RC
Vin
TJ = +25°C
200
SCOPE
RB
CAPACITANCE (pF)
TURN-ON PULSE
APPROX
+11 V
Vin 0
VEB(off)
+0.1 +0.2 +0.3
107
Cjd<<Ceb
t1
-4.0 V
t3
APPROX
+11 V
RB and RC varied
to obtain desired
current levels
t1 ≤ 7.0 ns
100 < t2 < 500 ms
t3 < 15 ns
Vin
t2
TURN-OFF PULSE
100
Ceb
70
50
DUTY CYCLE ≈ 2.0%
APPROX -9.0 V
30
Ccb
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
20 30 40
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Switching Time Equivalent Test Circuit
Figure 8. Capacitance
2.0
2.0
IC/IB = 10
TJ = 25°C
1.0
0.3
0.2
0.7
0.5
tr @ VCC = 30 V
t, TIME (s)
μ
0.7
0.5
tr @ VCC = 10 V
0.1
0.07
0.05
0.03
0.02
0.05 0.07 0.1
tf @ VCC = 30 V
0.3
0.2
0.1
0.07
0.05
td @ VEB(off) = 2.0 V
0.5 0.7 1.0
0.2 0.3
IC, COLLECTOR CURRENT (AMP)
ts′
1.0
2.0
0.03
0.02
0.05 0.07 0.1
3.0 4.0
Figure 9. Turn−On Time
tf @ VCC = 10 V
IB1 = IB2
IC/IB = 10
ts′ = ts - 1/8 tf
TJ = 25°C
0.5 0.7 1.0
0.2 0.3
IC, COLLECTOR CURRENT (AMP)
Figure 10. Turn−Off Time
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4
2.0
3.0 4.0
2N5190G, 2N5191G, 2N5192G
10
IC, COLLECTOR CURRENT (AMP)
5.0ms
5.0
There are two limitations on the power handling ability of
a transistor; average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 11 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
≤ 150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
100ms
1.0ms
TJ = 150°C
2.0
dc
1.0
SECONDARY BREAKDOWN LIMIT
THERMAL LIMIT AT TC = 25°C
BONDING WIRE LIMIT
CURVES APPLY BELOW RATED VCEO
2N5191
0.5
0.2
0.1
1.0
2N5192
2.0
5.0
10
20
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
100
r(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
Figure 11. Rating and Thermal Data
Active−Region Safe Operating Area
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.1
0.07
0.05
qJC(max) = 3.12°C/W — 2N5190-92
0.2
0.1
0.05
0.02
0.01
0.03
SINGLE PULSE
0.02
0.01
0.01
0.02 0.03
0.05
0.1
0.2
0.3 0.5
1.0
2.0
3.0 5.0 10
t, TIME OR PULSE WIDTH (ms)
20
50
100
200
500
1000
Figure 12. Thermal Response
DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA
A train of periodical power pulses can be represented by
the model shown in Figure A. Using the model and the
device thermal response, the normalized effective transient
thermal resistance of Figure 12 was calculated for various
duty cycles.
To find qJC(t), multiply the value obtained from Figure 12
by the steady state value qJC.
Example:
The 2N5190 is dissipating 50 watts under the following
conditions: t1 = 0.1 ms, tp = 0.5 ms. (D = 0.2).
Using Figure 12, at a pulse width of 0.1 ms and D = 0.2,
the reading of r(t1, D) is 0.27.
The peak rise in function temperature is therefore:
tP
PP
PP
t1
1/f
t1
tP
PEAK PULSE POWER = PP
DUTY CYCLE, D = t1 f -
Figure A
DT = r(t) × PP × qJC = 0.27 × 50 × 3.12 = 42.2_C
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5
2N5190G, 2N5191G, 2N5192G
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE AB
E
A1
Q
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
A
DIM
A
A1
b
b2
c
D
E
e
L
L1
P
Q
D
P
1
2
3
L1
MILLIMETERS
MIN
MAX
2.40
3.00
1.00
1.50
0.60
0.90
0.51
0.88
0.39
0.63
10.60
11.10
7.40
7.80
2.04
2.54
14.50
16.63
1.27
2.54
2.90
3.30
3.80
4.20
L
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
2X
b2
2X
e
b
c
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2N5191/D