ONSEMI MBRD1045

MBRB1045, MBRD1045
Preferred Device
SWITCHMODEt
Schottky Power Rectifier
Surface Mount Power Package
This series of Power Rectifiers employs the Schottky Barrier
principle in a large metal−to−silicon power diode. State−of−the−art
geometry features epitaxial construction with oxide passivation and
metal overlay contact. Ideally suited for use in low voltage, high
frequency switching power supplies, free wheeling diodes, and
polarity protection diodes.
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SCHOTTKY BARRIER
RECTIFIER
10 AMPERES, 45 VOLTS
Features
•
•
•
•
•
•
Guardring for Stress Protection
Low Forward Voltage
175°C Operating Junction Temperature
Epoxy Meets UL 94 V−0 @ 0.125 in
Short Heat Sink Tab Manufactured − Not Sheared!
Pb−Free Packages are Available
1
4
3
MARKING DIAGRAM
4
Mechanical Characteristics:
• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
• Weight: 1.7 grams for D2PAK (approximately)
•
•
•
•
MBRB1045G
AKA
1
3
0.4 grams for DPAK (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL1 Requirements
ESD Ratings: Machine Model, C (>400 V)
Human Body Model, 3B (>8000 V)
D2PAK
CASE 418B
PLASTIC
A
Y
WW
MBRB1045
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Diode Polarity
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
45
V
Average Rectified Forward Current
(Rated VR) TC = 135°C
IF(AV)
10
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz)
TC = 135°C
IFRM
20
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions
halfwave, single phase, 60 Hz)
IFSM
150 (MBRB)
70 (MBRD)
A
TJ, Tstg
−65 to +175
°C
Operating Junction and Storage
Temperature Range (Note 1)
Voltage Rate of Change (Rated VR)
dv/dt
10000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
© Semiconductor Components Industries, LLC, 2010
July, 2010 − Rev. 7
1
AY WW
4
1 2
3
DPAK
CASE 369C
Y
WW
B1045
G
MARKING DIAGRAM
YWW
B10
45G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MBRB1045/D
MBRB1045, MBRD1045
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance,
(MBRB1045)
− Junction−to−Case (Note 2)
− Junction−to−Ambient (Note 2)
(MBRD1045)
− Junction−to−Case (Note 2)
− Junction−to−Ambient (Note 2)
Value
RqJC
RqJA
RqJC
RqJA
1.0
50
2.43
68
Symbol
Value
Unit
°C/W
2. When mounted using minimum recommended pad size on FR−4 board.
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 3)
(IF = 10 Amps, TJ = 125°C)
(IF = 20 Amps, TJ = 125°C)
(IF = 20 Amps, TJ = 25°C)
VF
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
IR
Unit
V
0.57
0.72
0.84
mA
15
0.1
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%
ORDERING INFORMATION
Package
Shipping†
D2PAK
50 Units / Rail
MBRB1045G
D2PAK
(Pb−Free)
50 Units / Rail
MBRB1045T4
D2PAK
800 Units / Tape & Reel
MBRB1045T4G
D2PAK
(Pb−Free)
800 Units / Tape & Reel
MBRD1045T4G
DPAK
(Pb−Free)
2500 Units / Tape & Reel
Device
MBRB1045
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
MBRB1045, MBRD1045
100
100
TJ = 150°C
TJ = 150°C
70
100°C
50
25°C
100°C
50
25°C
30
30
20
20
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
70
10
7.0
5.0
3.0
2.0
1.0
10
7.0
5.0
3.0
2.0
1.0
0.7
0.7
0.5
0.5
0.3
0.3
0.2
0.2
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.2
0.4
0.6
0.8
1.0
1.2
vF, INSTANTANEOUS VOLTAGE (VOLTS)
vF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Maximum Forward Voltage
Figure 2. Typical Forward Voltage
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3
1.4
MBRB1045, MBRD1045
100
100
125°C
10
IR , REVERSE CURRENT (mA)
IR , REVERSE CURRENT (mA)
TJ = 150°C
100°C
1.0
75°C
0.1
25°C
150°C
10
125°C
1.0
100°C
75°C
0.1
0.01
0.01
25°C
0.001
0.001
0
5.0
10
15
20
25
30
35
40
45
50
0
15
20
25
30
35
40
45
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Maximum Reverse Current
Figure 4. Typical Reverse Current
50
1400
C, CAPACITANCE (pF)
1200
100
70
50
1000
30
800
600
400
200
0
20
1.0
2.0
3.0
5.0 7.0 10
20
30
50
0
70 100
20
30
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Maximum Surge Capability
Figure 5. Typical Capacitance
18
RATED VOLTAGE APPLIED
16
14
dc
12
SQUARE
WAVE
10
8.0
6.0
4.0
2.0
0
130
10
NUMBER OF CYCLES AT 60 Hz
PF(AV) , AVERAGE FORWARD POWER DISSIPATION (WATTS)
IFSM , PEAK HALF-WAVE CURRENT (AMPS)
10
VR, REVERSE VOLTAGE (VOLTS)
200
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
5.0
135
140
145
150
155
TC, CASE TEMPERATURE (°C)
50
10
9.0
dc
8.0
7.0
SQUARE
WAVE
6.0
5.0
4.0
3.0
2.0
1.0
0
0
Figure 6. Current Derating, Case,
RqJC = 1.0 °C/W
2.0
4.0
6.0
8.0
10
12
14
16
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 7. Forward Power Dissipation
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4
18
MBRB1045, MBRD1045
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
C
E
−B−
V
W
4
1
2
3
A
S
−T−
SEATING
PLANE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
K
J
G
D 3 PL
0.13 (0.005)
W
H
M
T B
M
SOLDERING FOOTPRINT*
10.49
8.38
16.155
2X
3.504
2X
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
MBRB1045, MBRD1045
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C−01
ISSUE D
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN
DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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6
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For additional information, please contact your local
Sales Representative
MBRB1045/D