MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package The MBRD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes. Features • Highly Stable Oxide Passivated Junction • Guardring for Stress Protection • Matched Dual Die Construction − • • • • • SCHOTTKY BARRIER RECTIFIER 10 AMPERES 35 VOLTS 1 4 May be Paralleled for High Current Output High dv/dt Capability Short Heat Sink Tap Manufactured − Not Sheared Very Low Forward Voltage Drop Epoxy Meets UL 94 V−0 @ 0.125 in Pb−Free Packages are Available 3 4 1 2 Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 0.4 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • http://onsemi.com Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 3 DPAK CASE 369C MARKING DIAGRAM YWW B10 35CLG Y WW B1035CL G = Year = Work Week = Device Code = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2010 July, 2010 − Rev. 7 1 Publication Order Number: MBRD1035CTL/D MBRD1035CTL MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 115°C) Per Leg Per Package Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 115°C) Per Leg Non−Repetitive Peak Surge Current Per Package (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) Storage / Operating Case Temperature Operating Junction Temperature (Note 1) Voltage Rate of Change (Rated VR, TJ = 25°C) Symbol Value Unit VRRM VRWM VR 35 V IO 5.0 10 A IFRM 10 A IFSM 50 A Tstg, Tc −55 to +150 °C TJ −55 to +150 °C dv/dt 10,000 V/ms Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Case Per Leg RqJC 3.0 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) Per Leg RqJA 137 °C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 3) (See Figure 2) IF = 5 Amps, TJ = 25°C IF = 5 Amps, TJ = 100°C IF = 10 Amps, TJ = 25°C IF = 10 Amps, TJ = 100°C Maximum Instantaneous Reverse Current (Note 3) (See Figure 4) (VR = 35 V, TJ = 25°C) (VR = 35 V, TJ = 100°C) (VR = 17.5 V, TJ = 25°C) (VR = 17.5 V, TJ = 100°C) Per Leg Per Leg VF V 0.47 0.41 0.56 0.55 IR mA 2.0 30 0.20 5.0 2. Rating applies when using minimum pad size, FR4 PC Board 3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0% ORDERING INFORMATION Package Shipping† DPAK 75 Units / Rail MBRD1035CTLG DPAK (Pb−Free) 75 Units / Rail MBRD1035CTLT4 DPAK 2500 Units / Tape & Reel DPAK (Pb−Free) 2500 Units / Tape & Reel Device MBRD1035CTL MBRD1035CTLT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MBRD1035CTL I F, INSTANTANEOUS FORWARD CURRENT (AMPS) I F, INSTANTANEOUS FORWARD CURRENT (AMPS) TYPICAL CHARACTERISTICS 100 TJ = 125°C 10 TJ = 100°C TJ = 25°C TJ = - 40°C 1.0 0.1 0.10 0.30 0.50 0.70 0.90 1.10 100 TJ = 125°C 10 TJ = 25°C 1.0 TJ = 100°C 0.1 0.10 Figure 1. Typical Forward Voltage Per Leg I R , MAXIMUM REVERSE CURRENT (AMPS) I R , REVERSE CURRENT (AMPS) 0.50 0.70 1.10 0.90 Figure 2. Maximum Forward Voltage Per Leg 1E+0 100E-3 1E+0 100E-3 TJ = 125°C 10E-3 1E-3 TJ = 100°C 100E-6 TJ = 25°C 0 10 20 VR, REVERSE VOLTAGE (VOLTS) TJ = 125°C 10E-3 TJ = 100°C 1E-3 100E-6 10E-6 1E-6 0.30 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 30 35 Figure 3. Typical Reverse Current Per Leg TJ = 25°C 10E-6 1E-6 0 10 20 VR, REVERSE VOLTAGE (VOLTS) 30 Figure 4. Maximum Reverse Current Per Leg http://onsemi.com 3 35 PFO , AVERAGE POWER DISSIPATION (WATTS) I O , AVERAGE FORWARD CURRENT (AMPS) MBRD1035CTL 8.0 dc 7.0 SQUARE WAVE (50% DUTY CYCLE) 6.0 5.0 Ipk/Io = p 4.0 Ipk/Io = 5 3.0 Ipk/Io = 10 2.0 Ipk/Io = 20 1.0 freq = 20 kHz 0 20 40 60 80 100 120 dc Ipk/Io = p 2.5 Ipk/Io = 5 2.0 Ipk/Io = 10 1.5 Ipk/Io = 20 1.0 0.5 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating Per Leg Figure 6. Forward Power Dissipation Per Leg TJ = 25°C C, CAPACITANCE (pF) 3.0 0 1000 100 10 0 SQUARE WAVE (50% DUTY CYCLE) 3.5 140 TJ , DERATED OPERATING TEMPERATURE ( ° C) 0 4.0 5 10 15 20 125 RqJA = 2.43°C/W 115 RqJA = 25°C/W 105 RqJA = 48°C/W 95 RqJA = 67.5°C/W 85 RqJA = 84°C/W 75 65 0 25 8.0 5 10 15 20 25 30 35 VR, DC REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance Per Leg Figure 8. Typical Operating Temperature Derating Per Leg * * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ may be calculated from the equation: TJ = TJmax − r(t)(Pf + Pr) where r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. http://onsemi.com 4 r (t) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) MBRD1035CTL 1.0 50%(DUTY CYCLE) 20% 10% 0.1 5.0% 2.0% 1.0% SINGLE PULSE 0.01 0.00001 Rtjl(t) = Rtjl • r(t) 0.0001 0.001 0.01 0.1 10 1.0 100 1000 t, TIME (s) r (t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 9. Thermal Response Junction to Case (Per Leg) 1.0E+00 50% (DUTY CYCLE) 20% 1.0E-01 1.0E-02 10% 5.0% 2.0% 1.0% 1.0E-03 SINGLE PULSE 1.0E-04 0.00001 0.0001 Rtjl(t) = Rtjl • r(t) 0.001 0.01 0.1 1.0 10 t, TIME (s) Figure 10. Thermal Response Junction to Ambient (Per Leg) http://onsemi.com 5 100 1000 10000 MBRD1035CTL PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C−01 ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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