MJE340 Plastic Medium−Power NPN Silicon Transistor This device is useful for high−voltage general purpose applications. Features • Suitable for Transformerless, Line−Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for High Reliability • Pb−Free Package is Available* MAXIMUM RATINGS http://onsemi.com 0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS, 20 WATTS ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ Rating Symbol Value Unit VCEO 300 Vdc VEB 3.0 Vdc Collector Current − Continuous IC 500 mAdc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 20 0.16 W mW/_C TJ, Tstg –65 to +150 _C Collector−Emitter Voltage Emitter−Base Voltage Operating and Storage Junction Temperature Range TO−225 CASE 77 STYLE 1 3 2 1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case qJC 6.25 _C/W MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. YWW JE340G ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ Characteristic Symbol Min Max Unit VCEO(sus) 300 − Vdc Collector Cutoff Current (VCB = 300 Vdc, IE = 0) ICBO − 100 mAdc Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO − 100 mAdc hFE 30 OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 1.0 mAdc, IB = 0) ON CHARACTERISTICS DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc) 240 − Y WW JE340 G = Year = Work Week = Device Code = Pb−Free Package ORDERING INFORMATION Device MJE340 MJE340G Package Shipping TO−225 500 Units/Box TO−225 (Pb−Free) 500 Units/Box *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 11 1 Publication Order Number: MJE340/D MJE340 1.0 28 0.8 24 V, VOLTAGE (VOLTS) PD, POWER DISSIPATION (WATTS) 32 20 16 12 0.4 0.2 IC/IB = 5.0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (°C) 140 0 10 160 ACTIVE−REGION SAFE OPERATING AREA 10 ms 0.3 500 ms TJ = 150°C 0.2 1.0ms dc 0.1 0.05 SECOND BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMIT TC = 25°C SINGLE PULSE 0.03 0.02 0.01 10 20 30 50 70 100 200 30 50 100 200 IC, COLLECTOR CURRENT (mA) 300 500 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.The data of Figure 3 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 1.0 0.5 20 Figure 2. “On” Voltages Figure 1. Power Temperature Derating IC, COLLECTOR CURRENT (AMP) VBE @ VCE = 10 V 0.6 4.0 0 VBE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 MJE340 8.0 TJ = 25°C 300 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 3. MJE340 http://onsemi.com 2 MJE340 hFE , DC CURRENT GAIN, NORMALIZED 10 7.0 5.0 2.0 TJ = 25°C 150°C 1.6 VCE = 1.0 Vdc VOLTAGE (VOLTS) 3.0 2.0 −55 °C 1.0 0.7 0.5 0.3 1.2 0.8 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 1.0 V 0.4 0.2 0.1 0.01 TJ = 25°C VCE(sat) @ IC/IB = 10 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IC, COLLECTOR CURRENT (AMP) 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 3.0 4.0 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 4. DC Current Gain 1.0 0.7 0.5 0.3 0.2 Figure 5. “On” Voltage D = 0.5 0.2 0.05 0.02 0.03 P(pk) qJC(t) = r(t) qJC qJC = 3.12°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) qJC(t) 0.1 0.1 0.07 0.05 2.0 3.0 4.0 0.01 t1 t2 DUTY CYCLE, D = t1/t2 0.02 SINGLE PULSE 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 0.5 20 50 100 500 200 1000 Figure 6. Thermal Response 300 VCE = 10 V VCE = 2.0 V hFE , DC CURRENT GAIN 200 TJ = 150°C 100 70 +100°C 50 +25 °C 30 20 10 −55 °C 1.0 2.0 3.0 5.0 7.0 10 20 30 50 IC, COLLECTOR CURRENT (mAdc) Figure 7. DC Current Gain http://onsemi.com 3 70 100 200 300 500 MJE340 PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE Z −B− U F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077−01 THRU −08 OBSOLETE, NEW STANDARD 077−09. C Q M −A− 1 2 3 H K J V G R 0.25 (0.010) S M A M B M D 2 PL 0.25 (0.010) M A M B M DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5_ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 −−− MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 −−− STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. 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