ONSEMI MJE340G

MJE340
Plastic Medium−Power
NPN Silicon Transistor
This device is useful for high−voltage general purpose applications.
Features
• Suitable for Transformerless, Line−Operated Equipment
• Thermopad Construction Provides High Power Dissipation Rating
for High Reliability
• Pb−Free Package is Available*
MAXIMUM RATINGS
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0.5 AMPERE
POWER TRANSISTOR
NPN SILICON
300 VOLTS, 20 WATTS
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Rating
Symbol
Value
Unit
VCEO
300
Vdc
VEB
3.0
Vdc
Collector Current − Continuous
IC
500
mAdc
Total Power Dissipation @ TC = 25_C
Derate above 25_C
PD
20
0.16
W
mW/_C
TJ, Tstg
–65 to +150
_C
Collector−Emitter Voltage
Emitter−Base Voltage
Operating and Storage Junction
Temperature Range
TO−225
CASE 77
STYLE 1
3
2 1
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
qJC
6.25
_C/W
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
YWW
JE340G
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
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Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
300
−
Vdc
Collector Cutoff Current
(VCB = 300 Vdc, IE = 0)
ICBO
−
100
mAdc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
−
100
mAdc
hFE
30
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(IC = 1.0 mAdc, IB = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 50 mAdc, VCE = 10 Vdc)
240
−
Y
WW
JE340
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
Device
MJE340
MJE340G
Package
Shipping
TO−225
500 Units/Box
TO−225
(Pb−Free)
500 Units/Box
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 11
1
Publication Order Number:
MJE340/D
MJE340
1.0
28
0.8
24
V, VOLTAGE (VOLTS)
PD, POWER DISSIPATION (WATTS)
32
20
16
12
0.4
0.2
IC/IB = 5.0
0
20
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
140
0
10
160
ACTIVE−REGION SAFE OPERATING AREA
10 ms
0.3
500 ms
TJ = 150°C
0.2
1.0ms
dc
0.1
0.05
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMIT TC = 25°C
SINGLE PULSE
0.03
0.02
0.01
10
20
30
50
70
100
200
30
50
100
200
IC, COLLECTOR CURRENT (mA)
300
500
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.The data of Figure 3 is
based on T J(pk) = 150_C; TC is variable depending on
conditions. Second breakdown pulse limits are valid for
duty cycles to 10% provided TJ(pk) v 150_C. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
1.0
0.5
20
Figure 2. “On” Voltages
Figure 1. Power Temperature Derating
IC, COLLECTOR CURRENT (AMP)
VBE @ VCE = 10 V
0.6
4.0
0
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
MJE340
8.0
TJ = 25°C
300
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 3. MJE340
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2
MJE340
hFE , DC CURRENT GAIN, NORMALIZED
10
7.0
5.0
2.0
TJ = 25°C
150°C
1.6
VCE = 1.0 Vdc
VOLTAGE (VOLTS)
3.0
2.0
−55 °C
1.0
0.7
0.5
0.3
1.2
0.8
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 1.0 V
0.4
0.2
0.1
0.01
TJ = 25°C
VCE(sat) @ IC/IB = 10
0.02 0.03 0.05 0.1
0.2 0.3 0.5
1.0
IC, COLLECTOR CURRENT (AMP)
0
0.005 0.01 0.02 0.03 0.05 0.1
0.2 0.3 0.5
1.0
IC, COLLECTOR CURRENT (AMP)
2.0 3.0 4.0
r(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
Figure 4. DC Current Gain
1.0
0.7
0.5
0.3
0.2
Figure 5. “On” Voltage
D = 0.5
0.2
0.05
0.02
0.03
P(pk)
qJC(t) = r(t) qJC
qJC = 3.12°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) qJC(t)
0.1
0.1
0.07
0.05
2.0 3.0 4.0
0.01
t1
t2
DUTY CYCLE, D = t1/t2
0.02
SINGLE PULSE
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
1.0
2.0 3.0 5.0
10
t, TIME OR PULSE WIDTH (ms)
0.5
20
50
100
500
200
1000
Figure 6. Thermal Response
300
VCE = 10 V
VCE = 2.0 V
hFE , DC CURRENT GAIN
200
TJ = 150°C
100
70
+100°C
50
+25 °C
30
20
10
−55 °C
1.0
2.0
3.0
5.0
7.0
10
20
30
50
IC, COLLECTOR CURRENT (mAdc)
Figure 7. DC Current Gain
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3
70
100
200
300
500
MJE340
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE Z
−B−
U
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
077−09.
C
Q
M
−A−
1 2 3
H
K
J
V
G
R
0.25 (0.010)
S
M
A
M
B
M
D 2 PL
0.25 (0.010)
M
A
M
B
M
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5_ TYP
0.148
0.158
0.045
0.065
0.025
0.035
0.145
0.155
0.040
−−−
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5 _ TYP
3.76
4.01
1.15
1.65
0.64
0.88
3.69
3.93
1.02
−−−
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
ON Semiconductor and
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MJE340/D