MJE371 Plastic Medium−Power PNP Silicon Transistor This device is designed for use in general−purpose amplifier and switching circuits. Recommended for use in 5 to 20 Watt audio amplifiers utilizing complementary symmetry circuitry. http://onsemi.com Features • DC Current Gain − hFE = 40 (Min) @ IC • • 4 AMPERES POWER TRANSISTOR PNP SILICON 40 VOLTS, 40 WATTS = 1.0 Adc MJE371 is Complementary to NPN MJE521 Pb−Free Package is Available* ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Rating Collector−Emitter Voltage Symbol Value Unit VCEO 40 Vdc Collector−Base Voltage VCB 40 Vdc Emitter−Base Voltage VEB 4.0 Vdc Collector Current − Continuous − Peak IC 4.0 8.0 Adc Base Current − Continuous IB 2.0 Adc PD 40 320 W mW/_C TJ, Tstg –65 to +150 _C Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range TO−225 CASE 77 STYLE 1 3 2 1 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case qJC 3.12 _C/W YWW JE371G Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎ ÎÎÎ Symbol Min Max Unit VCEO(sus) 40 − Vdc Collector−Base Cutoff Current (VCB = 40 Vdc, IE = 0) ICBO − 100 mAdc Emitter−Base Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO − 100 mAdc Characteristic Y WW JE371 G OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) (Note 1) ON CHARACTERISTICS DC Current Gain (Note 1) (IC = 1.0 Adc, VCE = 1.0 Vdc) hFE 40 − − = Year = Work Week = Device Code = Pb−Free Package ORDERING INFORMATION Device MJE371 MJE371G Package Shipping TO−225 500 Units/Box TO−225 (Pb−Free) 500 Units/Box 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 6 1 Publication Order Number: MJE371/D MJE371 10 IC, COLLECTOR CURRENT (AMP) 1.0ms 5.0 3.0 2.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 1 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less then the limitations imposed by second breakdown. 100ms 5.0ms dc 1.0 TJ = 150°C 0.5 BONDING WIRE LIMIT SECOND BREAKDOWN LIMIT THERMAL LIMIT @ TC = 25°C 0.3 0.2 0.1 2.0 4.0 6.0 8.0 10 20 40 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 60 Figure 1. Active−Region Safe Operating Area hFE , DC CURRENT GAIN, NORMALIZED 10 7.0 5.0 2.0 TJ = 25°C 150°C 1.6 VCE = 1.0 Vdc VOLTAGE (VOLTS) 3.0 2.0 −55 °C 1.0 0.7 0.5 0.3 1.2 0.8 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 1.0 V 0.4 0.2 0.1 0.01 TJ = 25°C VCE(sat) @ IC/IB = 10 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IC, COLLECTOR CURRENT (AMP) 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 3.0 4.0 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 2. DC Current Gain 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 2.0 3.0 4.0 Figure 3. “On” Voltage D = 0.5 0.2 0.05 0.02 0.03 P(pk) qJC(t) = r(t) qJC qJC = 3.12°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) qJC(t) 0.1 0.01 t1 t2 DUTY CYCLE, D = t1/t2 0.02 0.01 0.01 SINGLE PULSE 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) Figure 4. Thermal Response http://onsemi.com 2 20 50 100 200 500 1000 MJE371 PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE Z −B− U F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077−01 THRU −08 OBSOLETE, NEW STANDARD 077−09. C Q M −A− 1 2 3 H K J V G R 0.25 (0.010) S M A M B M D 2 PL 0.25 (0.010) M A M B M DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5_ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 −−− MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 −−− STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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