NPN 2N3773*, PNP 2N6609 Preferred Device Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, DC−DC converters or inverters. 16 A COMPLEMENTARY POWER TRANSISTORS 140 V, 150 W Features • • • • • http://onsemi.com Pb−Free Packages are Available** High Safe Operating Area (100% Tested) 150 W @ 100 V Completely Characterized for Linear Operation High DC Current Gain and Low Saturation Voltage hFE = 15 (Min) @ 8.0 A, 4.0 V VCE(sat) = 1.4 V (Max) @ IC = 8.0 A, IB = 0.8 A For Low Distortion Complementary Designs MARKING DIAGRAM 2Nxxxx MEX AYYWW MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector − Emitter Voltage VCEO 140 Vdc Collector − Emitter Voltage VCEX 160 Vdc Collector − Base Voltage VCBO 160 Vdc Emitter − Base Voltage VEBO 7 Vdc Collector Current − Continuous − Peak (Note 2) IC Base Current IB Adc 16 30 Adc − Continuous − Peak (Note 2) 4 15 Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD 150 0.855 W W/°C TJ, Tstg −65 to +200 °C TO−204 CASE 1−07 xxxx A YY WW = 3773 or 6609 = Assembly Location = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *Preferred devices are recommended choices for future use and best overall value. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Indicates JEDEC Registered Data. 2. Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Symbol Max Unit RJC 1.17 °C/W **For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2004 July, 2004 − Rev. 10 1 Publication Order Number: 2N3773/D NPN 2N3773*, PNP 2N6609 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector−Emitter Breakdown Voltage (Note 4) (IC = 0.2 Adc, IB = 0) VCEO(sus) 140 − Vdc Collector−Emitter Sustaining Voltage (Note 4) (IC = 0.1 Adc, VBE(off) = 1.5 Vdc, RBE = 100 Ohms) VCEX(sus) 160 − Vdc Collector−Emitter Sustaining Voltage (IC = 0.2 Adc, RBE = 100 Ohms) VCER(sus) 150 − Vdc Collector Cutoff Current (Note 4) (VCE = 120 Vdc, IB = 0) ICEO − 10 mAdc Collector Cutoff Current (Note 4) (VCE = 140 Vdc, VBE(off) = 1.5 Vdc) (VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150C) ICEX − − 2 10 Collector Cutoff Current (VCB = 140 Vdc, IE = 0) ICBO − 2 mAdc Emitter Cutoff Current (Note 4) (VBE = 7 Vdc, IC = 0) IEBO − 5 mAdc 15 5 60 − − − 1.4 4 OFF CHARACTERISTICS (Note 3) mAdc ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 8 Adc, VCE = 4 Vdc) (Note 4) (IC = 16 Adc, VCE = 4 Vdc) hFE − Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 800 mAdc) (Note 4) (IC = 16 Adc, IB = 3.2 Adc) VCE(sat) Vdc Base−Emitter On Voltage (Note 4) (IC = 8 Adc, VCE = 4 Vdc) VBE(on) — 2.2 Vdc Magnitude of Common−Emitter Small−Signal, Short−Circuit, Forward Current Transfer Ratio (IC = 1 A, f = 50 kHz) |hfe| 4 − − Small−Signal Current Gain (Note 4) (IC = 1 Adc, VCE = 4 Vdc, f = 1 kHz) hfe 40 − − IS/b 1.5 − Adc DYNAMIC CHARACTERISTICS SECOND BREAKDOWN CHARACTERISTICS Second Breakdown Collector Current with Base Forward Biased t = 1 s (non−repetitive), VCE = 100 V, See Figure 12 3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%. 4. Indicates JEDEC Registered Data. ORDERING INFORMATION Device 2N3773 2N3773G 2N6609 Package Shipping† TO−204 100 Unit / Tray TO−204 (Pb−Free) 100 Unit / Tray TO−204 100 Unit / Tray †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 NPN 2N3773*, PNP 2N6609 NPN 300 200 PNP 300 200 150°C 150°C 100 100 −55 °C 25°C 70 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 25°C 50 VCE = 4 V 30 20 50 30 20 10 10 7.0 5.0 0.2 0.3 7.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMPS) 10 −55 °C 70 VCE = 4 V 5.0 0.2 0.3 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMPS) 2.0 1.6 IC = 4 A 1.2 IC = 8 A IC = 16 A 0.8 0.4 TC = 25°C 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (AMPS) 2.0 3.0 2.0 1.6 IC = 4 A IC = 16 A 1.2 IC = 8 A 0.8 0.4 TC = 25°C 0 0.05 0.07 0.1 Figure 3. Collector Saturation Region 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (AMPS) 5.0 2.0 IC/IB = 10 IC/IB = 10 1.6 V, VOLTAGE (VOLTS) 1.6 V, VOLTAGE (VOLTS) 2.0 3.0 Figure 4. Collector Saturation Region 2.0 1.2 0.8 20 Figure 2. DC Current Gain VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 10 VBE(sat) 0.4 0 0.2 0.3 25°C 150°C 150°C VCE(sat) 1.2 VBE(sat) 0.8 25°C 150°C 150°C 0.4 25°C 25°C VCE(sat) 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 5. “On” Voltage Figure 6. “On” Voltage http://onsemi.com 3 10 20 NPN 2N3773*, PNP 2N6609 IC, COLLECTOR CURRENT (AMP) 30 20 10 s 40 s 10 5.0 3.0 2.0 100 s 200 s 1.0 ms dc 100 ms 1.0 0.5 0.3 0.2 0.1 0.05 0.03 3.0 500 ms BONDING WIRE LIMIT THERMAL LIMIT @ TC = 25°C, SINGLE PULSE SECOND BREAKDOWN LIMIT 200 300 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 7. Forward Bias Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation: i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 7 is based on TJ(pk) = 200C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 200C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. POWER DERATING FACTOR (%) 100 80 60 THERMAL DERATING 40 20 0 0 40 80 120 TC, CASE TEMPERATURE (°C) Figure 8. Power Derating http://onsemi.com 4 160 200 NPN 2N3773*, PNP 2N6609 PACKAGE DIMENSIONS TO−204 (TO−3) CASE 1−07 ISSUE Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO−204AA OUTLINE SHALL APPLY. A N C −T− E D K 2 PL 0.13 (0.005) U T Q M M Y DIM A B C D E G H K L N Q U V M −Y− L V SEATING PLANE 2 H G B M T Y 1 −Q− 0.13 (0.005) M INCHES MIN MAX 1.550 REF −−− 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC −−− 0.830 0.151 0.165 1.187 BSC 0.131 0.188 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR http://onsemi.com 5 MILLIMETERS MIN MAX 39.37 REF −−− 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC −−− 21.08 3.84 4.19 30.15 BSC 3.33 4.77 NPN 2N3773*, PNP 2N6609 PowerBase is a registered trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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