MSD42SWT1G NPN Silicon General Purpose High Voltage Transistor This NPN Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. http://onsemi.com COLLECTOR 3 Features These Devices are Pb-- Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25C) Symbol Value Unit Collector-Base Voltage V(BR)CBO 300 Vdc Collector-Emitter Voltage V(BR)CEO 300 Vdc Emitter-Base Voltage V(BR)EBO 6.0 Vdc Rating Collector Current -- Continuous IC 150 mAdc 1 BASE 2 EMITTER 3 1 2 THERMAL CHARACTERISTICS Symbol Max Unit Power Dissipation (Note 1) Rating PD 150 mW Junction Temperature TJ 150 C Tstg -- 55 to +150 C Storage Temperature Range SC-- 70 (SOT-- 323) CASE 419 STYLE 3 MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. D4 M G G ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 300 -- Vdc Collector-Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 300 -- Vdc Emitter-Base Breakdown Voltage (IE = 100 mAdc, IE = 0) V(BR)EBO 6.0 -- Vdc Collector-Base Cutoff Current (VCB = 300 Vdc, IE = 0) ICBO -- 0.1 mA Emitter--Base Cutoff Current (VEB = 6.0 Vdc, IB = 0) IEBO -- 0.1 mA DC Current Gain (Note 2) (VCE = 10 Vdc, IC = 1.0 mAdc) (VCE = 10 Vdc, IC = 30 mAdc) Collector-Emitter Saturation Voltage (Note 2) (IC = 200 mAdc, IB = 2.0 mAdc) hFE1 hFE2 25 40 200 -- VCE(sat) -- 0.5 1 D4 = Device Code M = Date Code* G = Pb--Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† -- MSD42SWT1G SC--70/SOT--323 3000/Tape & Reel (Pb--Free) Vdc †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 2. Pulse Test: Pulse Width 300 ms, D.C. 2%. Semiconductor Components Industries, LLC, 2010 October, 2010 - Rev. 2 1 Publication Order Number: MSD42SWT1/D MSD42SWT1G PACKAGE DIMENSIONS SC--70 (SOT--323) CASE 419--04 ISSUE N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. D e1 DIM A A1 A2 b c D E e e1 L HE 3 E HE 1 2 b e A 0.05 (0.002) 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR c A2 MIN 0.80 0.00 L A1 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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