ON Semiconductor MMSD301T1 MMSD701T1 SOD-123 Schottky Barrier Diodes The MMSD301T1, and MMSD701T1 devices are spin–offs of our popular MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • Extremely Low Minority Carrier Lifetime • Very Low Capacitance • Low Reverse Leakage ON Semiconductor Preferred Devices 2 1 CASE 425–04, STYLE 1 SOD–123 MAXIMUM RATINGS Rating Symbol Value Unit VR 30 70 Vdc Forward Power Dissipation TA = 25°C PF 225 mW Junction Temperature TJ –55 to +125 °C Tstg –55 to +150 °C Reverse Voltage MMSD301T1 MMSD701T1 Storage Temperature Range 1 Cathode 2 Anode DEVICE MARKING MMSD301T1 = XT, MMSD701T1 = XH ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µA) Diode Capacitance (VR = 0, f = 1.0 MHz, Note 1) Symbol Typ Max 30 70 — — — — — — 0.9 0.5 1.5 1.0 — — 0.9 0.5 1.5 1.0 — — 13 9.0 200 200 — — — — 0.38 0.52 0.42 0.7 0.45 0.6 0.5 1.0 V(BR)R MMSD301T1 MMSD701T1 MMSD301T1 MMSD701T1 Reverse Leakage (VR = 25 V) (VR = 35 V) MMSD301T1 MMSD701T1 Unit Volts CT MMSD301T1 MMSD701T1 Total Capacitance (VR = 15 Volts, f = 1.0 MHz) (VR = 20 Volts, f = 1.0 MHz) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mA) (IF = 1.0 mAdc) (IF = 10 mA) Min pF CT pF IR VF MMSD301T1 MMSD701T1 nAdc nAdc Vdc Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 September, 2001 – Rev. 2 1 Publication Order Number: MMSD301T1/D MMSD301T1 MMSD701T1 TYPICAL CHARACTERISTICS MMSD301T1 MMSD301T1 2.4 500 , MINORITY CARRIER LIFETIME (ps) CT, TOTAL CAPACITANCE (pF) 2.8 f = 1.0 MHz 2.0 1.6 1.2 0.8 0.4 0 0 3.0 6.0 9.0 12 15 18 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 MMSD301T1 400 KRAKAUER METHOD 300 200 100 0 30 0 Figure 1. Total Capacitance 100 TA = 100°C TA = 75°C 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) 40 60 30 50 70 IF, FORWARD CURRENT (mA) 80 90 100 MMSD301T1 TA = -40°C 10 TA = 85°C 1.0 TA = 25°C 0.01 0.001 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE ( A) MMSD301T1 0.1 20 Figure 2. Minority Carrier Lifetime 10 1.0 10 24 0.1 30 TA = 25°C 0.2 Figure 3. Reverse Leakage 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) Figure 4. Forward Voltage http://onsemi.com 2 1.0 1.2 MMSD301T1 MMSD701T1 TYPICAL CHARACTERISTICS MMSD701T1 MMSD701T1 1.6 500 , MINORITY CARRIER LIFETIME (ps) CT, TOTAL CAPACITANCE (pF) 2.0 f = 1.0 MHz 1.2 0.8 0.4 0 0 5.0 10 15 20 25 30 35 VR, REVERSE VOLTAGE (VOLTS) 40 45 MMSD701T1 400 KRAKAUER METHOD 300 200 100 0 50 0 10 Figure 5. Total Capacitance 100 MMSD701T1 TA = 100°C 1.0 TA = 75°C 0.1 80 90 100 Figure 6. Minority Carrier Lifetime IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE ( A) 10 30 50 70 40 60 IF, FORWARD CURRENT (mA) 20 MMSD701T1 10 TA = 85°C TA = -40°C 1.0 0.01 0.001 TA = 25°C 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 40 0.1 50 Figure 7. Reverse Leakage TA = 25°C 0.2 0.4 0.8 1.2 VF, FORWARD VOLTAGE (VOLTS) Figure 8. Forward Voltage http://onsemi.com 3 1.6 2.0 MMSD301T1 MMSD701T1 INFORMATION FOR USING THE SOD–123 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.91 0.036 ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ 2.36 0.093 4.19 0.165 1.22 0.048 mm inches SOD–123 SOD–123 POWER DISSIPATION SOLDERING PRECAUTIONS The power dissipation of the SOD–123 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOD–123 package, PD can be calculated as follows: PD = The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150°C – 25°C 556°C/W = 225 milliwatts The 556°C/W for the SOD–123 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOD–123 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. http://onsemi.com 4 MMSD301T1 MMSD701T1 PACKAGE DIMENSIONS SOD–123 CASE 425–04 ISSUE C A ÂÂÂ ÂÂÂ C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. H 1 K DIM A B C D E H J K B E 2 D J STYLE 1: PIN 1. CATHODE 2. ANODE http://onsemi.com 5 INCHES MIN MAX 0.055 0.071 0.100 0.112 0.037 0.053 0.020 0.028 0.01 --0.000 0.004 --0.006 0.140 0.152 MILLIMETERS MIN MAX 1.40 1.80 2.55 2.85 0.95 1.35 0.50 0.70 0.25 --0.00 0.10 --0.15 3.55 3.85 MMSD301T1 MMSD701T1 Notes http://onsemi.com 6 MMSD301T1 MMSD701T1 Notes http://onsemi.com 7 MMSD301T1 MMSD701T1 Thermal Clad is a trademark of the Bergquist Company. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). 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