MURHD560T4, MURHD560W1T4 MEGAHERTZ™ Power Rectifier Features and Benefits • • • • • http://onsemi.com Ultrafast 30 Nanosecond Recovery Times 175°C Operating Junction Temperature High Temperature Glass Passivated Junction High Voltage Capability to 600 Volts These are Pb−Free Devices ULTRAFAST RECTIFIER 5.0 AMPERES 600 VOLTS Applications 4 • Power Supplies • Inverters • Free Wheeling Diodes 1 2 DPAK CASE 369C STYLES 3, 8 3 Mechanical Characteristics • • • • • • Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 0.4 g (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds ESD Ratings: Machine Model = C (>400 V) Human Body Model = 3B (>8000 V) MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 600 V Average Rectified Forward Current (Rated VR, TC = 159°C) IF(AV) 5.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 50 A Operating Junction and Storage Temperature Range January, 2011 − Rev. 5 4 3 1 4 3 STYLE 3 STYLE 8 MARKING DIAGRAMS AYWW AYWW UH560G 560W1G STYLE 3 STYLE 8 UH560 560W1 A Y WW G = MURHD560T4 = MURHD560W1T4 = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION TJ, Tstg −65 to +175 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2011 1 1 Package Shipping† MURHD560T4G DPAK (Pb−Free) 2500 / Tape & Reel MURHD560W1T4G DPAK (Pb−Free) 2500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: MURHD560/D MURHD560T4, MURHD560W1T4 THERMAL CHARACTERISTICS Symbol Value Unit Maximum Thermal Resistance, Junction to Case Rating RqJC 2.5 °C/W Maximum Thermal Resistance, Junction to Ambient (Note 1) RqJA 49.5 °C/W Symbol Value Unit ELECTRICAL CHARACTERISTICS Rating Maximum Instantaneous Forward Voltage (Note 2) (IF = 5.0 Amps, TC = 25°C) (IF = 5.0 Amps, TC = 125°C) VF Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TC = 25°C) (Rated dc Voltage, TC = 125°C) IR Maximum Reverse Recovery Time (IF = 1.0 Amp, di/dt = 50 Amps/ms, VR = 30 V, TJ = 25°C) trr V 2.7 1.65 mA 10 70 30 ns 1. Rating applies when surface mounted on a 1.5 mm FR4 PC board with a 1 oz. thick, 700 mm2 Cu area. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. 100 IF, FORWARD CURRENT (AMPS) IF, FORWARD CURRENT (AMPS) 100 150°C 10 125°C 100°C 1 25°C 0.1 0.01 0 1.0 0.5 1.5 2.0 2.5 125°C 25°C 0.1 0 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 1.0 2.0 3.0 4.0 5.0 6.0 VF, MAXIMUM FORWARD VOLTAGE (VOLTS) Figure 2. Maximum Forward Voltage 1.0E−4 IR, MAXIMUM REVERSE CURRENT (AMPS) Figure 1. Typical Forward Voltage 1.0E−3 IR, REVERSE CURRENT (AMPS) 150°C 125°C 1.0E−5 150°C 1.0E−4 100°C 1.0E−6 125°C 100°C 1.0E−5 1.0E−7 1.0E−6 1.0E−8 1.0E−9 100°C 1 0.01 3.0 150°C 10 0 100 200 300 25°C 1.0E−7 25°C 400 500 600 1.0E−8 0 100 200 300 400 500 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current http://onsemi.com 2 600 MURHD560T4, MURHD560W1T4 100 PFO, AVERAGE POWER DISSIPATION (WATTS) 20 80 70 60 50 40 30 20 10 0 0 25 50 75 125 100 175 150 200 TJ = 175°C 15 SQUARE WAVE 10 dc 5 0 0 1 2 3 4 5 6 7 VR, REVERSE VOLTAGE (VOLTS) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Typical Capacitance Figure 6. Forward Power Dissipation IF, AVERAGE FORWARD CURRENT (AMPS) C, CAPACITANCE (pF) 90 9 RqJC = 2.5°C/W TJ = 175°C dc 8 7 6 SQUARE WAVE 5 4 3 2 1 0 100 110 120 130 140 150 160 TC, CASE TEMPERATURE (°C) Figure 7. Current Derating http://onsemi.com 3 170 180 8 R(t), TRANSIENT THERMAL RESISTANCE MURHD560T4, MURHD560W1T4 10 0.5 1 0.2 0.1 0.05 0.1 0.01 P(pk) t1 Single Pulse t2 DUTY CYCLE, D = t1/t2 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 t, TIME (s) R(t), TRANSIENT THERMAL RESISTANCE Figure 8. Thermal Response, Junction to Case 100 10 1 0.5 0.2 0.1 0.05 0.01 P(pk) t1 0.1 t2 DUTY CYCLE, D = t1/t2 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 t, TIME (s) Figure 9. Thermal Response, Junction to Ambient http://onsemi.com 4 10 100 1000 MURHD560T4, MURHD560W1T4 PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C−01 ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 6.17 0.243 SCALE 3:1 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE 3.00 0.118 1.60 0.063 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z STYLE 8: PIN 1. N/C 2. CATHODE 3. ANODE 4. CATHODE mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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