MBRF20H150CTG, MBR20H150CTG SWITCHMODE™ Power Rectifier 150 V, 20 A http://onsemi.com Features and Benefits •Low Forward Voltage •Low Power Loss/High Efficiency •High Surge Capability •20 A Total (10 A Per Diode Leg) •Guard-Ring for Stress Protection •These are Pb-Free Devices SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 150 VOLTS 1 2, 4 3 Applications •Power Supply - Output Rectification •Power Management •Instrumentation MARKING DIAGRAMS Mechanical Characteristics: •Case: Epoxy, Molded •Epoxy Meets UL 94 V-0 @ 0.125 in •Weight (Approximately): 1.9 Grams (TO-220 & TO-220FP) •Finish: All External Surfaces Corrosion Resistant and Terminal TO-220 FULLPAK] CASE 221D STYLE 3 1 Leads are Readily Solderable •Lead Temperature for Soldering Purposes: 2 AYWW B20H150G AKA 3 260°C Max. for 10 Seconds 4 MAXIMUM RATINGS Please See the Table on the Following Page TO-220AB CASE 221A STYLE 6 1 2 AYWW B20H150G AKA 3 A Y WW B20H150 G AKA = Assembly Location = Year = Work Week = Device Code = Pb-Free Device = Polarity Designator ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2007 October, 2007 - Rev. 0 1 Publication Order Number: MBRF20H150CT/D MBRF20H150CTG, MBR20H150CTG MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit VRRM VRWM VR 150 V IF(AV) 10 20 A IFSM 180 A Operating Junction Temperature (Note 1) TJ -20 to +150 °C Storage Temperature Tstg -65 to +150 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms > 400 > 8000 V Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC = 134°C (Per Leg) (Per Device) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) ESD Ratings: Machine Model = C Human Body Model = 3B Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Rating Symbol Value RqJC RqJA RqJC 2.0 45 2.5 Typ Max Unit °C/W Maximum Thermal Resistance (MBR20H150CT) - Junction-to-Case - Junction-to-Ambient - Junction-to-Case (MBRF20H150CT) ELECTRICAL CHARACTERISTICS (Per Diode Leg) Rating Symbol Maximum Instantaneous Forward Voltage (Note 2) (IF = 5 A, TC = 25°C) (IF = 5 A, TC = 125°C) (IF = 10 A, TC = 25°C) (IF = 10 A, TC = 125°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 25°C) (Rated DC Voltage, TC = 125°C) iR Unit V 0.72 0.57 0.87 0.65 0.60 0.68 50 30 mA mA 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. DEVICE ORDERING INFORMATION Package Type Shipping† MBRF20H150CTG TO-220FP (Pb-Free) 50 Units / Rail MBR20H150CTG TO-220 (Pb-Free) 50 Units / Rail Device Order Number †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. http://onsemi.com 2 IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) MBRF20H150CTG, MBR20H150CTG 100 TJ = 100°C TJ = 125°C TJ = 25°C 10 1 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 100 TJ = 125°C TJ = 100°C TJ = 25°C 10 1 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1.0E-02 1.0E-01 TJ = 125°C IR, REVERSE CURRENT (A) IR, REVERSE CURRENT (A) TJ = 125°C 1.0E-03 1.0E-02 TJ = 100°C 1.0E-04 TJ = 100°C 1.0E-03 1.0E-05 1.0E-04 TJ = 25°C 1.0E-06 TJ = 25°C 1.0E-05 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current 18 16 PFO, AVERAGE POWER DISSIPATION (WATTS) IF, AVERAGE FORWARD CURRENT (AMPS) 1.0E-07 1.0E-06 0 10 20 30 40 50 60 70 80 90 100110 120130140150 0 10 20 30 40 50 60 70 80 90 100110 120130140150 dc 14 12 SQUARE WAVE 10 8 6 4 2 0 110 115 120 125 130 135 140 145 150 155 18 TJ = 150°C 16 14 SQUARE 12 10 dc 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 TC, CASE TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating Figure 6. Forward Power Dissipation http://onsemi.com 3 20 MBRF20H150CTG, MBR20H150CTG 1000 C, CAPACITANCE (pF) TJ = 25°C 100 10 0 50 100 150 VR, REVERSE VOLTAGE (V) R(t), TRANSIENT THERMAL RESISTANCE Figure 7. Capacitance 100 D = 0.5 10 0.2 0.1 1 0.05 P(pk) 0.01 t1 0.1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 100 1000 t1, TIME (sec) R(t), TRANSIENT THERMAL RESISTANCE Figure 8. Thermal Response Junction-to-Ambient for MBR20H150CTG 10 1 D = 0.5 0.2 0.1 0.05 P(pk) 0.1 t1 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 t1, TIME (sec) Figure 9. Thermal Response Junction-to-Case for MBR20H150CTG http://onsemi.com 4 100 1000 MBRF20H150CTG, MBR20H150CTG R(t), TRANSIENT THERMAL RESISTANCE 0 10 D = 0.5 1 0.1 0.2 0.1 0.05 0.01 P(pk) t1 0.01 t2 SINGLE PULSE DUTY CYCLE, D = t1/t2 0.001 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 t1, TIME (sec) Figure 10. Thermal Response Junction-to-Case for MBRF20H150CTG http://onsemi.com 5 100 1000 MBRF20H150CTG, MBR20H150CTG PACKAGE DIMENSIONS TO-220 FULLPAK CASE 221D-03 ISSUE J -T-B- F SEATING PLANE C S Q NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. U DIM A B C D F G H J K L N Q R S U A 1 2 3 H -Y- K G N L D J R 3 PL 0.25 (0.010) M B Y M -T- SEATING PLANE C F T S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88 STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE TO-220 CASE 221A-09 ISSUE AE B INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 U H K Z L R V J G D N FULLPAK and SWITCHMODE are trademarks of Semiconductor Components Industries, LLC. INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 6: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 ANODE CATHODE ANODE CATHODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 http://onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MBRF20H150CT/D