ONSEMI MMQA5V6T1

MMQA Quad Common
Anode Series
Preferred Devices
SC−74 Quad Monolithic
Common Anode
Transient Voltage Suppressors
for ESD Protection
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This quad monolithic silicon voltage suppressor is designed for
applications requiring transient overvoltage protection capability. It is
intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment, and other applications. Its quad junction common
anode design protects four separate lines using only one package.
These devices are ideal for situations where board space is at a
premium.
SC−74 QUAD TRANSIENT
VOLTAGE SUPPRESSOR
24 WATTS PEAK POWER
5.6 − 33 VOLTS
PIN ASSIGNMENT
Features
1
6
• SC−74 Package Allows Four Separate Unidirectional Configurations
• Peak Power − Min. 24 W @ 1.0 ms (Unidirectional),
2
5
3
4
•
•
•
•
•
per Figure 5 Waveform
Peak Power − Min. 150 W @ 20 ms (Unidirectional),
per Figure 6 Waveform
Maximum Clamping Voltage @ Peak Pulse Current
Low Leakage < 2.0 mA
ESD Rating of Class N (exceeding 16 kV) per the Human Body Model
Pb−Free Packages are Available
THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Value
Unit
Peak Power Dissipation @ 1.0 ms (Note 1)
@ TA ≤ 25°C
Ppk
24
W
Peak Power Dissipation @ 20 ms (Note 2)
@ TA ≤ 25°C
Ppk
150
W
Total Power Dissipation on FR-5 Board
(Note 3) @ TA = 25°C
°PD°
°225
1.8
mW°
mW/°C
°
Thermal Resistance from
Junction−to−Ambient
RqJA
556
°C/W
Total Power Dissipation on Alumina
Substrate (Note 4) @ TA = 25°C
Derate above 25°C
°PD°
°300
2.4
mW°
mW/°C
Thermal Resistance from
Junction−to−Ambient
RqJA
417
°C/W
TJ, Tstg
°− 55 to
+150°
°C
TL
260
°C
Junction and Storage Temperature Range
Lead Solder Temperature − Maximum
(10 Second Duration)
6
1
SC−74
PLASTIC
CASE 318F
PIN 1.
2.
3.
4.
5.
6.
CATHODE
ANODE
CATHODE
CATHODE
ANODE
CATHODE
MARKING DIAGRAM
xxx M G
G
xxx
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 5 of this data sheet.
ORDERING INFORMATION
See detailed ordering and shipping information in the table on
page 5 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 6
1
Publication Order Number:
MMQA/D
MMQA Quad Common Anode Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
UNIDIRECTIONAL
(Circuit tied to pins 1, 2, and 5; Pins 2, 3, and 5; Pins 2, 4, and 5; or Pins 2, 5, and 6) (VF = 0.9 V Max @ IF = 10 mA)
Max
Reverse
Leakage
Current
Breakdown Voltage
VZT
(Note 5)
(V)
@ IZT
IR
VR
Max Zener
Impedance
(Note 7)
Max
Reverse
Surge
Current
Max
Reverse
Voltage @
IRSM
(Note 6)
(Clamping
Voltage)
Maximum
Temperature
Coefficient
of VZ
Capacitance
@ 0 Volt
Bias, 1 MHz
(pF)
Device
Min
Nom
Max
(mA)
(nA)
(V)
ZZT @ IZT
(W) (mA)
IRSM
(A)
VRSM
(V)
(mV/°C)
Min
Max
MMQA5V6T1,T3
5.32
5.6
5.88
1.0
2000
3.0
400
3.0
8.0
1.26
−
−
MMQA6V2T1,T3
5.89
6.2
6.51
1.0
700
4.0
300
2.66
9.0
10.6
−
−
MMQA6V8T1,T3
6.46
6.8
7.14
1.0
500
4.3
300
2.45
9.8
10.9
100
250
MMQA12VT1,T3
11.4
12
12.6
1.0
75
9.1
80
1.39
17.3
14
−
−
MMQA13VT1
12.4
13
13.7
1.0
75
9.8
80
1.29
18.6
15
−
−
MMQA15VT1,T3
14.3
15
15.8
1.0
75
11
80
1.1
21.7
16
−
−
MMQA18VT1,T3
17.1
18
18.9
1.0
75
14
80
0.923
26
19
−
−
MMQA20VT1,T3
19
20
21
1.0
75
15
80
0.84
28.6
20.1
−
−
MMQA21VT1,T3
20
21
22.1
1.0
75
16
80
0.792
30.3
21
−
−
MMQA22VT1,T3
20.9
22
23.1
1.0
75
17
80
0.758
31.7
22
−
−
MMQA24VT1,T3
22.8
24
25.2
1.0
75
18
100
0.694
34.6
25
−
−
MMQA27VT1,T3
25.7
27
28.4
1.0
75
21
125
0.615
39
28
−
−
MMQA30VT1,T3
28.5
30
31.5
1.0
75
23
150
0.554
43.3
32
−
−
MMQA33VT1,T3
31.4
33
34.7
1.0
75
25
200
0.504
48.6
37
−
−
1.
2.
3.
4.
5.
6.
7.
Non-repetitive current pulse per Figure 5 and derate above TA = 25°C per Figure 4.
Non-repetitive current pulse per Figure 6 and derate above TA = 25°C per Figure 4.
FR-5 = 1.0 x 0.75 x 0.62 in.
Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
VZ measured at pulse test current IT at an ambient temperature of 25°C.
Surge current waveform per Figure 5 and derate per Figure 4.
ZZT is measured by dividing the AC voltage drop across the device by the AC current supplied. The specified limits are IZ(AC) = 0.1 IZ(DC),
with AC frequency = 1 kHz.
TYPICAL CHARACTERISTICS
300
10,000
BIASED AT 0 V
BIASED AT 1 V
BIASED AT 50%
OF VZ NOM
200
1,000
I R , LEAKAGE (nA)
C, CAPACITANCE (pF)
250
150
100
+150°C
100
+25°C
10
−40°C
50
0
5.6
6.8
12
20
27
VZ, NOMINAL ZENER VOLTAGE (V)
0
33
5.6
6.8
20
27
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 1. Typical Capacitance
Figure 2. Typical Leakage Current
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33
MMQA Quad Common Anode Series
PD , POWER DISSIPATION (mW)
300
250
ALUMINA SUBSTRATE
200
150
100
FR-5 BOARD
50
0
0
25
50
75
100
125
150
175
PEAK PULSE DERATING IN % OF PEAK POWER
OR CURRENT @ TA = 25 ° C
TYPICAL CHARACTERISTICS
100
90
80
70
60
50
40
30
20
10
0
0
25
50
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Steady State Power Derating Curve
VALUE (%)
HALF VALUE−
50
100
tr
90
% OF PEAK PULSE CURRENT
PEAK VALUE−I RSM
100
100
125
150
175
200
Figure 4. Pulse Derating Curve
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO 50%
OF IRSM.
tr ≤ 10 ms
tr
75
TA, AMBIENT TEMPERATURE (°C)
IRSM
2
tP
PEAK VALUE IRSM @ 8 ms
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
80
70
60
HALF VALUE IRSM/2 @ 20 ms
50
40
30
tP
20
10
0
0
1
2
3
0
4
0
20
40
t, TIME (ms)
200
RECTANGULAR
WAVEFORM, TA = 25°C
180
PPK , PEAK SURGE POWER (W)
Ppk PEAK SURGE POWER (W)
80
Figure 6. 8 × 20 ms Pulse Waveform
Figure 5. 10 × 1000 ms Pulse Waveform
100
60
t, TIME (ms)
10
UNIDIRECTIONAL
160
8 × 20 WAVEFORM AS PER FIGURE 6
140
120
100
80
10 × 100 WAVEFORM AS PER FIGURE 5
60
40
20
1.0
0.1
1.0
10
100
1000
0
5.6
PW, PULSE WIDTH (ms)
6.8
12
20
27
NOMINAL VZ
Figure 7. Maximum Non−Repetitive Surge
Power, Ppk versus PW
Figure 8. Typical Maximum Non−Repetitive
Surge Power, Ppk versus VBR
Power is defined as VRSM x IZ(pk) where VRSM
is the clamping voltage at IZ(pk).
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3
33
MMQA Quad Common Anode Series
TYPICAL COMMON ANODE APPLICATIONS
A quad junction common anode design in a SC−74
package protects four separate lines using only one package.
This adds flexibility and creativity to PCB design especially
when board space is at a premium. A simplified example of
MMQA Series Device applications is illustrated below.
Computer Interface Protection
A
KEYBOARD
TERMINAL
PRINTER
ETC.
B
C
I/O
D
FUNCTIONAL
DECODER
GND
MMQA SERIES DEVICE
Microprocessor Protection
VDD
VGG
ADDRESS BUS
RAM
ROM
DATA BUS
I/O
CPU
CLOCK
CONTROL BUS
GND
MMQA SERIES DEVICE
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4
MMQA Quad Common Anode Series
DEVICE MARKING AND ORDERING INFORMATION
Device Marking
Package
Shipping †
MMQA5V6T1*
5A6
SC−74
3,000/Tape & Reel
MMQA6V2T1*
6A2
SC−74
3,000/Tape & Reel
MMQA6V2T3*
6A2
SC−74
10,000/Tape & Reel
MMQA6V8T1*
6A8
SC−74
3,000/Tape & Reel
MMQA12VT1*
12A
SC−74
3,000/Tape & Reel
MMQA13VT1*
13A
SC−74
3,000/Tape & Reel
MMQA15VT1*
15A
SC−74
3,000/Tape & Reel
MMQA18VT1*
18A
SC−74
3,000/Tape & Reel
MMQA20VT1*
20A
SC−74
3,000/Tape & Reel
MMQA20VT3*
20A
SC−74
10,000/Tape & Reel
MMQA21VT1*
21A
SC−74
3,000/Tape & Reel
MMQA22VT1*
22A
SC−74
3,000/Tape & Reel
MMQA24VT1*
24A
SC−74
3,000/Tape & Reel
MMQA27VT1*
27A
SC−74
3,000/Tape & Reel
MMQA27VT3*
27A
SC−74
10,000/Tape & Reel
MMQA30VT1*
30A
SC−74
3,000/Tape & Reel
MMQA33VT1*
33A
SC−74
3,000/Tape & Reel
Device*
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*The “G’’ suffix indicates Pb−Free package available.
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case.
FINISH: Corrosion resistant finish, easily solderable.
Package designed for optimal automated board assembly.
Small package size for high density applications.
Available in 8 mm Tape and Reel.
Use the Device Number to order the 7 inch/3,000 unit reel.
Replace the “T1” with “T3” in the Device Number to order the 13 inch/10,000 unit reel.
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5
MMQA Quad Common Anode Series
PACKAGE DIMENSIONS
SC−74
CASE 318F−05
ISSUE L
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
4. 318F−01, −02, −03 OBSOLETE. NEW
STANDARD 318F−04.
D
6
5
4
2
3
E
HE
1
DIM
A
A1
b
c
D
E
e
L
HE
q
b
e
C
A
0.05 (0.002)
q
L
A1
MIN
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
0°
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.37
0.50
0.18
0.26
3.00
3.10
1.50
1.70
0.95
1.05
0.40
0.60
2.75
3.00
10°
−
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0°
INCHES
NOM
0.039
0.002
0.015
0.007
0.118
0.059
0.037
0.016
0.108
−
MAX
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
10°
STYLE 1:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. ANODE
6. CATHODE
SOLDERING FOOTPRINT*
2.4
0.094
0.95
0.037
1.9
0.074
0.95
0.037
0.7
0.028
1.0
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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USA/Canada
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Phone: 81−3−5773−3850
Email: [email protected]
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ON Semiconductor Website: http://onsemi.com
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For additional information, please contact your
local Sales Representative.
MMQA/D