KSP8598/8599 KSP8598/8599 Amplifier Transistor • Collector-Emitter Voltage: VCEO= KSP8598: 60V KSP8599: 80V • Collector Power Dissipation: PC (max)=625mW • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : KSP8598 : KSP8599 -60 -80 V V : KSP8598 : KSP8599 -60 -80 V V Collector-Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -5 V -500 mA PC TJ Collector Power Dissipation 625 mW Junction Temperature 150 TSTG °C Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage : KSP8598 : KSP8599 Test Condition IC= -100µA, IE=0 * Collector-Emitter Breakdown Voltage : KSP8598 : KSP8599 IC= -10mA, IB=0 BVEBO Emitter-Base Breakdown Voltage IE= -10µA, IC=0 ICBO Collector Cut-off Current : KSP8598 : KSP8599 VCB= -60V, IE=0 VCB= -80V, IE=0 BVCEO Min. Max. Units -60 -80 V V -60 -80 V V -5 V -100 -100 nA nA ICEO Collector Cut-off Current VCE= -60V, IB=0 -100 nA IEBO Emitter Cut-off Current -100 nA hFE * DC Current Gain VEB= -4V, IC=0 VCE= -5V, IC= -1mA VCE= -5V, IC= -10mA VCE= -5V, IC= -100mA VCE (sat) * Collector-Emitter Saturation Voltage VBE (on) * Base-Emitter On Voltage : KSP8598 : KSP8599 100 100 75 IC= -100mA, IB= -5mA IC= -100mA, IB= -10mA VCE= -5V, IC= -1mA VCE= -5V, IC= -10mA -0.5 -0.6 150 fT Current Gain Bandwidth Product VCE= -5V, IC= -10mA f=100MHz Cob Output Capacitance VCB= -5V, IE=0 f=1MHz 300 -0.4 -0.3 V V -0.7 -0.8 V V MHz 8 pF * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% ©2001 Fairchild Semiconductor Corporation Rev. A1, July 2001 KSP8598/8599 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics 1000 hFE, DC CURRENT GAIN VCE = -5V 100 10 -1 -10 -100 -10 IC = 10 IB -1 V BE(sat) -0.1 VCE(sat) -0.01 -1 -1000 IC[mA], COLLECTOR CURRENT -100 -1000 IC[mA], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 1000 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 100 IE = 0 f = 1MHz Cob [pF], CAPACITANCE -10 10 1 -0.1 -1 -10 VCB [V], COLLECTOR-BASE VOLTAGE Figure 3. Output Capacitance ©2001 Fairchild Semiconductor Corporation -100 VCE = -5V 100 10 -1 -10 -100 IC[mA], COLLECTOR CURRENT Figure 4. Current Gain Bandwidth Product Rev. A1, July 2001 KSP8598/8599 Package Demensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A1, July 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™ ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H3